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    TC59S6416 Price and Stock

    Toshiba America Electronic Components TC59S6416CFT-80

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    Bristol Electronics TC59S6416CFT-80 95 1
    • 1 $7.84
    • 10 $5.096
    • 100 $3.3971
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    Quest Components TC59S6416CFT-80 747
    • 1 $12
    • 10 $12
    • 100 $12
    • 1000 $4.2
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    TC59S6416CFT-80 747
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    • 1000 $4.2
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    TC59S6416CFT-80 76
    • 1 $10.5
    • 10 $5.25
    • 100 $4.9
    • 1000 $4.9
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    TC59S6416CFT-80 76
    • 1 $10.5
    • 10 $5.25
    • 100 $4.9
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    Toshiba America Electronic Components TC59S6416BFT-80

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    Bristol Electronics TC59S6416BFT-80 36
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    Quest Components TC59S6416BFT-80 66
    • 1 $15
    • 10 $10
    • 100 $9.25
    • 1000 $9.25
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    TC59S6416BFT-80 28
    • 1 $50
    • 10 $50
    • 100 $42.5
    • 1000 $42.5
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    TC59S6416BFT-80 24
    • 1 $22.5
    • 10 $20
    • 100 $18.5
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    TC59S6416BFT-80 4
    • 1 $15
    • 10 $7.5
    • 100 $7.5
    • 1000 $7.5
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    Toshiba America Electronic Components TC59S6416BFT-10

    SDRAM, 4M x 16, 54 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC59S6416BFT-10 45
    • 1 $8.82
    • 10 $4.41
    • 100 $4.116
    • 1000 $4.116
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    TC59S6416 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC59S6416 Toshiba 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM Scan PDF
    TC59S6416-10 Toshiba MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Scan PDF
    TC59S6416-80 Toshiba MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Scan PDF
    TC59S6416BFT Toshiba MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Scan PDF
    TC59S6416BFT-10 Toshiba 1,048,576 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Scan PDF
    TC59S6416BFT-10 Toshiba 1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM Scan PDF
    TC59S6416BFT-80 Toshiba 1,048,576 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Scan PDF
    TC59S6416BFT-80 Toshiba 1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM Scan PDF
    TC59S6416BFT/BFTL10 Toshiba 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM Scan PDF
    TC59S6416BFT/BFTL-80 Toshiba 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM Scan PDF
    TC59S6416BFTL Toshiba MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Scan PDF
    TC59S6416BFTL-10 Toshiba 1,048,576 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Scan PDF
    TC59S6416BFTL-10 Toshiba 1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM Scan PDF
    TC59S6416BFTL-80 Toshiba 1,048,576 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Scan PDF
    TC59S6416BFTL-80 Toshiba 1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM Scan PDF
    TC59S6416CFT-75 Toshiba 1,048,576 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Scan PDF
    TC59S6416CFTL-80 Toshiba 1,048,576 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Scan PDF

    TC59S6416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY644071EG-10 304-WORD 64-BIT THMY644071EG TC59S6416FT THMY644071

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY6440F1 BEG-80 304-WORD 64-BIT THMY6440F1BEG TC59S6416BFT 64-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDS X4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


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    PDF TC59S6416/08/04CFT/CFTL-75 576-WORDS 16-BITS 152-WORDSX4BANKSX8-BITS 304-WORDSX4BANKSX4-BITS TC59S6416CFT/CFTL 576-wordsX4 TC59S6408CFT/CFTL TC59S6404CFT/CFTL

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A THLY644031BFG -80,-80L,-10.-10l_ TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY644031BFG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT/BFTL DRAMs on a printed circuit board.


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    PDF THLY644031BFG 304-WORD 64-BIT TC59S6416BFT/BFTL A0-A11

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7240F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7240F1BEG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY7240F1 BEG-80 304-WORD 72-BIT THMY7240F1BEG TC59S6416BFT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


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    PDF TC59S6416/08/04CFT/CFTL-75 576-WORDSX4BANKSx 16-BITS 152-WORDSX4BANKSX8-BITS 304-WORDSX4BANKSX4-BITS TC59S6416CFT/CFTL 576-wordsX4 TC59S6408CFT/CFTL TC59S6404CFT/CFTL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75#-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


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    PDF TC59S6416/08/04CFT/CFTL-75# 576-WORDSX4BANKSx 16-BITS 152-WORDSX4BANKSX8-BITS 304-WORDSX4BANKSX4-BITS TC59S6416CFT/CFTL 576-wordsX4 TC59S6408CFT/CFTL TC59S6404CFT/CFTL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75#-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1 .0 4 8 .5 7 6 -W O R D S X 4 B A N K S x 16-BITS SYN C H R O N O U S D Y N A M IC R A M 2 ,0 9 7 ,1 5 2 -W O R D S X 4 B A N K S X 8 -B IT S SYN C H R O N O U S D Y N A M IC R AM


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    PDF TC59S6416/08/04CFT/CFTL-75# 16-BITS TC59S6416CFT/CFTL 576-wordsX4 TC59S6408CFT/CFTL TC59S6404CFT/CFTL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416/08/04BFT/BFTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WC>RDSx4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDS X4BANKS X 8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS X4BANKS X4-BITS SYNCHRONOUS DYNAMIC RAM


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    PDF TC59S6416/08/04BFT/BFTL-80 576-WC 16-BITS 152-WORDS 304-WORDS TC59S6416BFT/BFTL 576-wordsX4 TC59S6408BFT/BFTL TC59S6404BFT/BFTL TC59S6416/08/04BFT/BFTL-80/

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA THLY644031BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY644031BFG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT/BFTL DRAMs on a printed circuit board.


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    PDF THLY644031BFG-80 304-WORD 64-BIT THLY644031BFG TC59S6416BFT/BFTL THLY644031BFG)

    THMY644071EG-10

    Abstract: No abstract text available
    Text: TOSHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4 , 194, 304-W O R D BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.


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    PDF 64-BIT THMY644071EG-10 THMY644071EG 304-word TC59S6416FT THMY644071 THMY644071EG-10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC59S6416AFT, TC59S6408AFT, TC59S6404AFT 1,048,576 WORDS X 4 BANK X 16 BITS 2,097,152 WORDS X 4 BANK X 8 BITS 4,194,304 WORDS X 4 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S6416FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x4-banks x16-bits and


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    PDF TC59S6416AFT, TC59S6408AFT, TC59S6404AFT TC59S6416FT 576-words x16-bits TC59S6408FTis 152-wordsx4-banks andTC59S1604FTorganized 304-wordsx4-banks

    THMY644071BEG

    Abstract: EG 8010
    Text: TOSHIBA THMY644071 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT/BFTL DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY644071 BEG-80 304-WORD 64-BIT THMY644071BEG TC59S6416BFT/BFTL EG 8010

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6416FT/FTL is a CMOS synchronous dynamic random access memory organized as 1,048,576words X 4 bank X 16 bits. Fully synchronous operations are referenced to the positive edges of clock


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    PDF TC59S6416FT/FTL-80 576-WORDSX4BANKSX 16-BITS TC59S6416FT/FTL 576words

    TC59S6416

    Abstract: act tv hi ntt TC59S6416BFT/CFT
    Text: TOSHIBA TENTATIVE TC59S6416/08/04BFT/BFTL-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


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    PDF TC59S6416/08/04B FTL-80 576-WORDSx4BANKSx 16-BITS 152-WORDSX4BANKSX8-BITS 304-WORDSX4BANKSX4-BITS TC59S6416BFT/BFTL 576-wordsX4 TC59S6408BFT/BFTL TC59S6404BFT/BFTL TC59S6416 act tv hi ntt TC59S6416BFT/CFT

    TCMS

    Abstract: TC59S6416BFT THMY7240F1BEG-80 intel h55 circuit diagram
    Text: TO SH IBA THMY7240F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SY N C H R O N O U S D R A M M O D U LE DESCRIPTION The THMY7240F1BEG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59S6416BFT DRAMs and an unbufTer on a printed circuit board.


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    PDF THMY7240F1BEG-80 304-WORD 72-BIT THMY7240F1BEG TC59S6416BFT 72-bit THMY7240F1 TCMS THMY7240F1BEG-80 intel h55 circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH LY724031BFG-80#-80L#-10#-1OL TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY724031BFG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of five TC59S6416BFT/BFTL DRAMs on a printed circuit board.


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    PDF LY724031BFG-80# 304-WORD 72-BIT THLY724031BFG TC59S6416BFT/BFTL THLY724031BFG)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY6440F1 BEG-80 THMY6440F1BEG 304-word 64-bit TC59S6416BFT 64-bit

    CL 1107

    Abstract: No abstract text available
    Text: TO SH IB A THMY7240D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS D R A M MODULE DESCRIPTION The THMY7240D1BEG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6416BFTL DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY7240D1BEG-80L 304-WORD 72-BIT THMY7240D1BEG TC59S6416BFTL 72-bit 168-pin CL 1107

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLY648021 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648021BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6416BFT/BFTL DRAMs on a printed circuit board.


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    PDF THLY648021 BFG-80 64-BIT THLY648021BFG 608-word TC59S6416BFT/BFTL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


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    PDF TC59S6416/08/04CFT/CFTL-75 576-WORDSX4BANKSX 16-BITS 152-WORDSX4BANKSX8-BITS 304-WORDSX4BANKSX4-BITS TC59S6416CFT/CFTL 576-wordsX4 TC59S6408CFT/CFTL TC59S6404CFT/CFTL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7240F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7240F1BEG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY7240F1 BEG-80 304-WORD 72-BIT THMY7240F1BEG TC59S6416BFT 72-bit

    TC59S6416BFT

    Abstract: THMY6440F1BEG-80
    Text: TO SH IB A THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY6440F1BEG-80 304-WORD 64-BIT THMY6440F1BEG TC59S6416BFT 168-pin PC100 THMY6440F1BEG-80

    U1680

    Abstract: No abstract text available
    Text: TO SH IB A THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY6440F1 BEG-80 304-WORD 64-BIT THMY6440F1BEG TC59S6416BFT 64-bit U1680