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    Text: • TOSHIBA TOTTEMfl G G S S Q S D MbM ■ TOSE TC59R1609VK TOSHIBA L06 IC/MFM0RY bSE » SILICON GATE CMOS 18 Mbit RDRAM t a r g e t DESCRIPTION The TC59R1609VK is a new generation ultra high speed CMOS Rambus™ DRAM organized as 2MX9. The TC59R1609VK uses advanced circuit design techniques with standard CMOS process technology. It


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    Untitled

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    Text: TOSHIBA TC59R1609VK SILICON GATE CMOS 18 Mbit RDRAM target D E SC R IP T IO N T h e T C 5 9 R 1 6 0 9 V K is a n ew g en eratio n u ltra h ig h sp eed C M O S R am b u s™ D R A M org a n iz e d as 2M X 9. T h e T C 5 9 R 1 6 0 9 V K uses a d v an c e d circu it d e sig n te c h n iq u es w ith stan d a rd C M O S p ro c e ss tech n o lo g y . It


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