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    TC551664BJ Price and Stock

    Toshiba America Electronic Components TC551664BJ-15

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    Bristol Electronics TC551664BJ-15 197 1
    • 1 $8.064
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    • 100 $3.4941
    • 1000 $3.3062
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    Quest Components TC551664BJ-15 2,392
    • 1 $12.4673
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    • 1000 $8.3115
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    TC551664BJ-15 48
    • 1 $10.8
    • 10 $5.4
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    TC551664BJ-15 2
    • 1 $5.43
    • 10 $3.62
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    Component Electronics, Inc TC551664BJ-15 48
    • 1 $9.23
    • 10 $9.23
    • 100 $6.92
    • 1000 $6
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    Toshiba America Electronic Components TC551664-BJ15

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    Bristol Electronics TC551664-BJ15 53
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    Toshiba America Electronic Components TC551664BJ-12

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    NEC Electronics Group TC551664BJ-15

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    Others TC551664BJ-10

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    TC551664BJ Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC551664BJ Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BJ-10 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BJ-10 Toshiba Scan PDF
    TC551664BJ-12 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Scan PDF
    TC551664BJ-12 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, SOJ, 44-Pin Scan PDF
    TC551664BJ-12 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BJ-15 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, SOJ, 44-Pin Scan PDF
    TC551664BJ-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BJ-15EL Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, SOJ, 44-Pin, Tape And Reel Scan PDF
    TC551664BJI-12 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BJI-12 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, SOJ, 44-Pin Scan PDF
    TC551664BJI-15 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BJI-15 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, SOJ, 44-Pin Scan PDF
    TC551664BJI-15 Toshiba 16-Bit CMOS Static RAM Scan PDF

    TC551664BJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original     		PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    TSOP 44 Pattern

    Abstract: MCM62996
    Text: 3.57mm [0.141"] 3.54mm [0.140"] Pin 1 5.54mm [0.218"] 2.78mm [0.109"] 11.18mm [0.440"] 0.4mm [0.016"] 1 R1 3.56mm [0.140"] C2 C1 0.38mm [0.015"] scored edge 21.18mm [0.834"] 22.35mm [0.880"] 17.42mm [0.686"] 11.17mm [0.440"] TSOP PLCC 0.61mm [0.024"] 0.8mm


    Original     		PDF 16-bit TC551664BJ/BFT0 PLCC-62996-F-01 FR4/G10 TSOP 44 Pattern MCM62996

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    EPM7128ELC84-15

    Abstract: A2098 D5036 transistor a2098 74LS123 datasheet ADC14071 ADC14071EVAL ADC16061 LM4041-ADJ TP10
    Text: N August 2000 Rev 1 Evaluation Board Instruction Manual ADC14071 14-Bit, 7 MSPS, 390mW Analog-to-Digital Converter 1999 National Semiconductor Corporation http://www.national.com [Blank] 2 http://www.national.com Table of Contents 1.0 Introduction. 5


    Original     		PDF ADC14071 14-Bit, 390mW EPM7128ELC84-15 A2098 D5036 transistor a2098 74LS123 datasheet ADC14071 ADC14071EVAL ADC16061 LM4041-ADJ TP10

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    tc551664aj-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    SOJ44-P-400-1

    Abstract: TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC551664BJ

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		PDF TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE TC551664BJI/BFT1-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit TC551664BJ1/BFTI-12 SOJ44-P-400-1 TC551664BJI/BFTI-12 TSOPII44-P-400

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    TC551664AJ-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit 44-P-400-0 TC551664AJ-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC551664BJI/B FTl-12,-15 T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT T E N T A T IV E SILICON G ATE C M O S 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as


    OCR Scan     		PDF TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit SC1J44-P-400-1 44-P-400-0

    TC551664AJ-15

    Abstract: SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 KH0-13tM TC551664AJ-15 SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ

    043Z

    Abstract: tc5516
    Text: T O S H IB A T E N T A T IV E TC551664BJI/BFT1-12,-15 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 6 5 ,5 3 6 -W O R D BY 16-BIT CMO S STATIC RA M DESCRIPTION The TC551664BJT/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as


    OCR Scan     		PDF TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit SOJ44-P-4QO-1 44-P-400-0 043Z tc5516