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    Abstract: No abstract text available
    Text: TOSHIBA TC55V11601FT-15 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16,777,216-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The TC5511601FT is a 16,777,216-bit high speed static random access memory SRAM organized as 16,777,216 words by 1 bit. Fabricated using CMOS technology and advanced circuit techniques to provide high


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    PDF TC55V11601FT-15 216-WORD TC5511601FT 216-bit TC55V11601FT 54remain 54-P-400-0 1601FT-15 tfk a