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    Toshiba America Electronic Components TC551001BPI-85L

    128K X 8 STANDARD SRAM, 85 ns, PDIP32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC551001BPI-85L 2
    • 1 $13.8
    • 10 $13.8
    • 100 $13.8
    • 1000 $13.8
    • 10000 $13.8
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    TC551001BPI Datasheets Context Search

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    TC551001BFTI

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPI/BFI/BFTI/BTRI-85L/1 OL SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,


    OCR Scan     		PDF TC551001BPI/BFI/BFTI/BTRI-85L/1 TC551001BPL TC551001 n724fl TC551001BFTI

    TC551001

    Abstract: No abstract text available
    Text: TOSHIBA TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


    OCR Scan     		PDF TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L 072-WORD TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI 576-bit 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


    OCR Scan     		PDF TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85 072-WORD TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI 576-bit 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SH IB A M O S D IG ITAL INTEGRATED CIRCUIT CIRCUIT TC551001 BPI / BFI / BFTI / BTRI - 85L TC551001 BPI / BFI / BFTI / BTRI - 10L TOSHIBA TECHNICAL DATA SILICON GATE CM O S 1 3 1 ,0 7 2 -W O R D BY 8-BIT STATIC R A M DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI is a 1,048,576-bit static random access memory SRAM organized as


    OCR Scan     		PDF TC551001 TC551001BPI/BFI/BFTI/BTRI 576-bit whenP-525) 775TYP TC551001BPI-Lâ P32-P-0820)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC 551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


    OCR Scan     		PDF 072-WORD BPI/BFI/BFTI/BTRI/BSTI/BSRI-85 TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI 576-bit 32-P-0820-0 32-P-0

    TC551001BFI

    Abstract: tc551001bfti TC551001BPI
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPI/BFI/BFTI/BTRI-85L/1 OL SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,


    OCR Scan     		PDF TC551001BPI/BFI/BFTI/BTRI-85L/1 TC551001BPL TC551001 SR01040994 TC551001BFI tc551001bfti TC551001BPI

    TC551001BFI

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPI/BFI/BFTI/BTRI-85V/10V PRELIMINARY SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,


    OCR Scan     		PDF TC551001BPI/BFI/BFTI/BTRI-85V/10V TC551001BPL TC551001 SR01050995 TC551001BFI

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ^□•17240 D02flöL4 Tflfl TC551001BPI/BFI/BFn/BTRI-^5/10 ■a < ■D Ü CS <3 IB - SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS


    OCR Scan     		PDF D02flà TC551001BPI/BFI/BFn/BTRI- TC551001BPL TheTC551001BPL

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI-85U-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


    OCR Scan     		PDF 072-WORD 551001BPI/BFI/BFTI/BTRI/BSTI/BSRI-85U-10L TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI 576-bit 32-P-0820-0 TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L 32-P-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPI/BFI/BFTI/BTRI-85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,


    OCR Scan     		PDF TC551001BPI/BFI/BFTI/BTRI-85/10 TC551001BPL TC551001 SR01030994

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ^0^7240 002007b 7 TT TC551001BPI/BFI/BFII/BTRI-85L/10L SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power


    OCR Scan     		PDF 002007b TC551001BPI/BFI/BFII/BTRI-85L/10L TC551001BPL TC551001

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPL/BFL/BFTL/BTRL-70V/85V SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,


    OCR Scan     		PDF TC551001BPL/BFL/BFTL/BTRL-70V/85V TC551001BPL TC551001 SR01060795 BPLyBFL/BFTL/BTRL-70V/85V OP32-P-525 775TYP TCH72MÃ

    AI523

    Abstract: toshiba tc551001BPL TC551001BFL
    Text: TOSHIBA TC551001BPL/BFL/BFIL/BTRL-70V/85V S I L I C ON GATE C M O S 1 3 1 , 07 2 W O R D X 8 BI T STATIC R AM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an


    OCR Scan     		PDF TC551001BPL/BFL/BFIL/BTRL-70V/85V TC551001BPL TC551001 AI523 toshiba tc551001BPL TC551001BFL

    TC551001APL

    Abstract: tc551001
    Text: Static RAM Capacity X6 Type No. Organization TC5564APL/AFL-15 8,192x8 64KBit TC5564APL/AFL-20 Min. Cycle Tlme ns 150 150 200 200 85 85 TC55257BPL/BFL/BSPL/BFTL/BTRL-10 100 100 85 85 TC55257BPL/BFL/BSPL/BFTL/BTRL-10L 100 100 TC55257BPI/BFI/BSPI/BFTI/BTRI-1OL


    OCR Scan     		PDF TC5564APL/AFL-15 64KBit TC5564APL/AFL-20 TC55257BPL/BFL/BSPUBFTUBTRL-85 TC55257BPL/BFL/BSPL/BFTL/BTRL-10 TC55257BPL/BFL/BSPL/BFTL/BTRL-85L TC55257BPL/BFL/BSPL/BFTL/BTRL-10L TC55257BPI/BFI/BSPI/BFTI/BTRI-1OL TC55257CPL/CFl /CSPl7CFTLyCTRL-70 TC551001APL tc551001

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ^0^7240 DGSòSfiò 411 V < T C 5 5 1 0 0 1 B P I/ B F I/ B F n / B T R I- 8 5 V / 1 0 V SILICON GATE CMOS PRELIMINARY ¡3 Œ "5 i! J3 § in if 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS


    OCR Scan     		PDF TC551001BPL TC551001 TC551001BPI/BFI/BFTI/BTRI-85V/10V SR01050995 TSOP32-P-0820 TC551001BPI/BFI/BFTI/BTRI-/85V/10V TSOP32-P-0820A i-107