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    EIAJ ED-4701-1

    Abstract: tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB
    Text: [3] 東芝半導体製品の品質･信頼性保証 1. 1.1 信頼性試験とは 信頼性試験の意義と目的 半導体デバイスの信頼性試験の目的としてデバイスがメーカーから出荷されお客様の機器組み立て 調整工程を経て、最終ユーザーにおいて所望の期間、機器の機能、性能が発揮されることを確認する


    Original     		PDF M65BJ TC5117405BST TC51V16165BFT TC5118165BFT 65deg C/150deg 300cycles) TC5117405BSJ TC514265DJ TC5118165BJ EIAJ ED-4701-1 tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB

    tc5118165bj

    Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
    Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide


    Original     		PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 TC5116405BSJ/BST 300mil) cycles/64ms TC51V16325BJ: SOJ70-P-400A tc5118165bj TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5117405BSJ/BST-60/70 TC5117405BSJ/BST TC5117405BSJ/BST 300mil) DR16070295 SOJ26-P-300C) BST60