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    Sullins Connector Solutions PTC10SBDN

    CONN HEADER R/A 10POS 2.54MM
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    DigiKey PTC10SBDN Bulk 1
    • 1 $1.61
    • 10 $1.441
    • 100 $1.61
    • 1000 $0.80541
    • 10000 $0.7065
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    Sullins Connector Solutions PTC10SACN

    CONN HEADER VERT 10POS 2.54MM
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    DigiKey PTC10SACN Bulk 1
    • 1 $0.82
    • 10 $0.732
    • 100 $0.82
    • 1000 $0.4089
    • 10000 $0.35869
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    Sullins Connector Solutions PTC10SADN

    CONN HEADER VERT 10POS 2.54MM
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    DigiKey PTC10SADN Bulk 1
    • 1 $0.89
    • 10 $0.797
    • 100 $0.89
    • 1000 $0.44538
    • 10000 $0.39069
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    Sullins Connector Solutions PTC10SFDN

    CONN HEADER VERT 10POS 2.54MM
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    DigiKey PTC10SFDN Bulk 1
    • 1 $1.05
    • 10 $0.939
    • 100 $1.05
    • 1000 $0.5249
    • 10000 $0.46044
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    Sullins Connector Solutions PTC10SFEN

    CONN HEADER VERT 10POS 2.54MM
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    DigiKey PTC10SFEN Bulk 1
    • 1 $1.42
    • 10 $1.266
    • 100 $1.42
    • 1000 $0.70766
    • 10000 $0.62075
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    TC10S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY57V641620B

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.


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    HY57V651620B 16Bit HY57V641620B 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


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    TLCS-870/C TMP86FS28DFG PDF

    576X1

    Abstract: No abstract text available
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620B is organized as 4banks of 1,048,576x16.


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    HY57V651620B 16Bit HY57V651620B 864-bit 576x16. 400mil 54pin 576X1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


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    HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620B is organized as 4banks of


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    HY57V651620B 16Bit HY57V651620B 864-bit 576x16. 400mil 54pin PDF

    TMP86FS28DFG

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FS28DFG TMP86FS28DFG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


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    TLCS-870/C TMP86FS28DFG TMP86FS28DFG PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28FG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


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    TLCS-870/C TMP86CS28FG PDF

    TMP86FS28DFG

    Abstract: LQFP80-P-1212-0 TC10 LCD 16*1 0F69H lcd 16*2
    Text: 8 ビットマイクロコントローラ TLCS-870/C シリーズ TMP86FS28DFG セミコンダクター社 ● 当社は品質信頼性の向上に努めておりますが、一般に半導体製品は誤作動したり 故障することがあります。当社半導体製品をご使用いただく場合は、半導体製品の


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    TLCS-870/C TMP86FS28DFG 060116DCP1 31/fc 63/fc 127/fc fc/130 LQFP80-P-1212-0 TMP86FS28DFG TC10 LCD 16*1 0F69H lcd 16*2 PDF

    TMP86FS28DFG

    Abstract: LQFP80-P-1212-0 TC10
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


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    TLCS-870/C TMP86FS28DFG TMP86FS28DFG LQFP80-P-1212-0 TC10 PDF

    HY57V658020BTC-10S

    Abstract: HY57V658020BTC10P HY57V658020B HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


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    HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin HY57V658020BTC-10S HY57V658020BTC10P HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75 PDF

    TMP86CS28DFG

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


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    TLCS-870/C TMP86CS28DFG TMP86CS28DFG PDF

    HY57V641620HG

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.


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    HY57V651620B 16Bit HY57V641620HG 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75 PDF

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


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    PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


    Original
    TLCS-870/C TMP86CS28DFG PDF

    576X1

    Abstract: No abstract text available
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620B is organized as 4banks of 1,048,576x16.


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    HY57V651620B 16Bit HY57V651620B 864-bit 576x16. 400mil 54pin 576X1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of


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    HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


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    HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin PDF

    TMP86CS28FG

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28FG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


    Original
    TLCS-870/C TMP86CS28FG TMP86CS28FG PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28FG TMP86CS28FG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


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    TLCS-870/C TMP86CS28FG PDF

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


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    PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821 PDF

    57V651620B

    Abstract: No abstract text available
    Text: HY57V651620BTC 4Mx16-bit, 4K Ref., 4Banks. 3.3V D E S C R I PT I ON The Hynix H Y 5 7 V 6 4 162 0H G is a 67,1 0 8 ,8 64 -b it CMOS require large m e m o r y dens ity and high band wi dth . Synchronous DRAM, ideally suited for the main memory applications


    OCR Scan
    HY57V651620BTC 4Mx16-bit, 57V651620B PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V651620BTC-I 4Mx16-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix H Y 5 7 V 6 5 1 6 2 0 B which require l ow p o w e r is a 6 7 , 1 0 8 , 8 6 4 - b i t consumption and CMOS extended Synchronous temperature DRAM, range. i de al ly sui ted for the HY57V651620B


    OCR Scan
    HY57V651620BTC-I 4Mx16-bit, HY57V651620B 576x16. HY57V651620B 54pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    OCR Scan
    HY57V658020BTC HY57V658020B 864-bit 152x8. PDF

    7-segment common anode

    Abstract: NE587 bcd to 7 seg 12 volt NE587F NE587N 7 segment common anode 7segment common anode bcd to 16 seg PIN DIAGRAM FOR AV DECODER 7 segment common
    Text: NE587 LED Decoder/Driver P ro d u c t S p ecificatio n PIN CONFIGURATIONS DESCRIPTION FEATURES T h e N E 58 7 is a la tc h /d e c o d e r/d riv e r fo r 7 -s e g m e n t c o m m o n a n o d e LE D d is ­ p lays. T h e N E 58 7 h a s a p ro g ra m m a b le


    OCR Scan
    NE587 NE587 TC20860S TC106SOS 7-segment common anode bcd to 7 seg 12 volt NE587F NE587N 7 segment common anode 7segment common anode bcd to 16 seg PIN DIAGRAM FOR AV DECODER 7 segment common PDF