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KOA Speer Electronics Inc RK73H1HTTC6202F RES 62K OHM 1% 1/20W 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RK73H1HTTC6202F	Digi-Reel	19,589		1	1 $0.1 10 $0.047 100 $0.0252 1000 $0.01517 10000 $0.0114	Buy Now
	RK73H1HTTC6202F	Cut Tape	19,589		1	1 $0.1 10 $0.047 100 $0.0252 1000 $0.01517 10000 $0.0114	Buy Now
	RK73H1HTTC6202F	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01026	Buy Now
TTI	RK73H1HTTC6202F	Reel	40,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00792	Buy Now
Chip1Stop	RK73H1HTTC6202F	Cut Tape	7,735			1 - 10 - 100 $0.00403 1000 $0.00201 10000 $0.0014	Buy Now
SEI Stackpole Electronics Inc RNMF14FTC620R RES 620 OHM 1% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RNMF14FTC620R	Cut Tape	9,193		1	1 $0.1 10 $0.087 100 $0.0336 1000 $0.01555 10000 $0.01555	Buy Now
	RNMF14FTC620R	Reel	7,700		5,000	1 - 10 - 100 - 1000 - 10000 $0.01078	Buy Now
Chip1Stop	RNMF14FTC620R		4,870			1 - 10 - 100 - 1000 - 10000 $0.0174	Buy Now
Master Electronics	RNMF14FTC620R					1 - 10 - 100 - 1000 - 10000 $0.0167	Buy Now
SEI Stackpole Electronics Inc RNMF14FTC620K RES 620K OHM 1% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RNMF14FTC620K	Cut Tape	6,349		1	1 $0.1 10 $0.061 100 $0.0236 1000 $0.01093 10000 $0.01093	Buy Now
Master Electronics	RNMF14FTC620K					1 - 10 - 100 - 1000 - 10000 $0.0167	Buy Now
Microchip Technology Inc TC620CVOA713 THERMOSTAT PROG ACT HIGH 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC620CVOA713	Digi-Reel	2,634		1	1 $2.13 10 $2.13 100 $2.13 1000 $2.13 10000 $2.13	Buy Now
	TC620CVOA713	Cut Tape	2,634		1	1 $2.13 10 $2.13 100 $2.13 1000 $2.13 10000 $2.13	Buy Now
Mouser Electronics	TC620CVOA713		3,239			1 $2.13 10 $2.13 100 $1.73 1000 $1.73 10000 $1.73	Buy Now
Newark	TC620CVOA713	Reel			3,300	1 - 10 - 100 $1.66 1000 $1.66 10000 $1.66	Buy Now
RS	TC620CVOA713	Bulk		27 Weeks	3,300	1 - 10 - 100 - 1000 - 10000 $2.97	Get Quote
Microchip Technology Inc	TC620CVOA713		3,300			1 $2.13 10 $2.13 100 $1.61 1000 $1.56 10000 $1.55	Buy Now

Avnet Silica	TC620CVOA713			14 Weeks	3,300	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	TC620CVOA713			13 Weeks	3,300	1 - 10 - 100 - 1000 - 10000 -	Buy Now
SEI Stackpole Electronics Inc RNF12FTC620R RES 620 OHM 1% 1/2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RNF12FTC620R	Cut Tape	2,472		1	1 $0.29 10 $0.232 100 $0.0907 1000 $0.04 10000 $0.04	Buy Now
NAC	RNF12FTC620R				2,500	1 - 10 - 100 - 1000 - 10000 $0.112	Buy Now

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TC 620 Datasheets (76)

Part	Manufacturer	Description	Datasheet Type	PDF
TC620	Microchip Technology	5V, Dual Trip Point Temperature Sensors	Original	PDF
TC620	Microchip Technology	Logic Output Temperature Sensor Family	Original	PDF
TC620	TelCom Semiconductor	5V, DUAL TRIP POINT TEMPERATURE SENSORS	Original	PDF
TC6208	Tamarack Microelectronics	8 PORT 10/100 UNMANAGED ETHERNET SWITCH WITH FLOW-CONTROL, PRIORITY, TRUNKING	Original	PDF
TC620CCOA	Microchip Technology	Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC	Original	PDF
TC620CCOA	Microchip Technology	5V, Dual Trip Point Temperature Sensor	Original	PDF
TC620CCOA	TelCom Semiconductor	5V, DUAL TRIP POINT TEMPERATURE SENSORS	Original	PDF
TC620CCOA713	Microchip Technology	Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC	Original	PDF
TC620CCOA713	Microchip Technology	5V, Dual Trip Point Temperature Sensor	Original	PDF
TC620CCOA713G	Microchip Technology	IC TEMP SENSOR ANALOG 8 pin SOIC N	Original	PDF
TC620CCOAG	Microchip Technology	TEMP SWITCH, INT SENSOR, C OPT., 0C to +70C, 8-SOIC 150mil, TUBE	Original	PDF
TC620CCPA	Microchip Technology	Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-DIP	Original	PDF
TC620CCPA	Microchip Technology	5 V, Dual Trip Point Temperature Sensor	Original	PDF
TC620CCPA	TelCom Semiconductor	5V, DUAL TRIP POINT TEMPERATURE SENSORS	Original	PDF

TC620CCPAG	Microchip Technology	IC TEMP SENSOR ANALOG 8 pin PDIP	Original	PDF
TC620CCVOA	Microchip Technology	5V, dual trip point temperature sensors, high true control output	Original	PDF
TC620CEOA	Microchip Technology	Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC	Original	PDF
TC620CEOA	Microchip Technology	5V, Dual Trip Point Temperature Sensor	Original	PDF
TC620CEOA	TelCom Semiconductor	5V, DUAL TRIP POINT TEMPERATURE SENSORS	Original	PDF
TC620CEOA713	Microchip Technology	Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC	Original	PDF

TC 620 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
R075 Abstract: R056 R68 resistor kf 202 transistor YAGEO TYPE CR KT 210 R30-R33 470R 680R kc series vitrohm resistors Text: Series KC, KH, KV, KT, KF Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 1W 200 R056 - R20 R22 - 300R 330R - 9K1 2W 202 R075 - R43 R47 - 620R 680R - 20K 4W 206 R056 - R20	Original	PDF
YAGEO TYPE CR Abstract: Yageo 680R Vitrohm resistors R-62 Text: Series KP Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 2W 290 R10 - R27 R30 - 510R 560R - 7K5 4W 292 R15 - R56 R62 - 620R 680R - 11K 5W 294 R27 - R62 R68 - 1K1 1K2 - 20K	Original	PDF
Untitled Abstract: No abstract text available Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules	Original	PDF	SEMiX452GB126HDs
Untitled Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules	Original	PDF	SEMiX452GAL126HDs
Untitled Abstract: No abstract text available Text: SEMiX452GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules	Original	PDF	SEMiX452GAR126HDs
Untitled Abstract: No abstract text available Text: SEMiX604GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 880 A Tc = 80 °C 670 A 600 A ICnom ICRM SEMiX 4s ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A Tc = 80 °C 529	Original	PDF	SEMiX604GB12Vs E63532
Untitled Abstract: No abstract text available Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 587 A Tc = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 441 A Tc = 70 °C 342 A 400 A 800	Original	PDF	SKiM606GD066HD
Untitled Abstract: No abstract text available Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 587 A Tc = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 441 A Tc = 70 °C 342 A 400 A 800	Original	PDF	SKiM606GD066HD
Untitled Abstract: No abstract text available Text: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 590 A Tc = 80°C 413 A 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 533 A Tc = 80°C 367 A ICRM = 2xICnom VGES SEMiX 4s Trench IGBT Modules	Original	PDF	SEMiX604GB126HDs
SID200S12 Abstract: TF 620 M Text: SID200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode	Original	PDF	SID200S12 125oC 800A/us SID200S12 TF 620 M
SII200S12 Abstract: IGBT 150A Text: SII200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode	Original	PDF	SII200S12 125oC 800A/us SII200S12 IGBT 150A
SDI200S12 Abstract: No abstract text available Text: SDI200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode	Original	PDF	SDI200S12 125oC 800A/us SDI200S12
Untitled Abstract: No abstract text available Text: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 590 A Tc = 80 °C 413 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX604GB126HDs E63532
Untitled Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX452GAL126HDs E63iX452GAL126HDs

Untitled Abstract: No abstract text available Text: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 590 A Tc = 80 °C 413 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX604GB126HDs E63532
discharge diode Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX452GAL126HDs E63532 discharge diode
Untitled Abstract: No abstract text available Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX452GB126HDs E6353SEMiX452GB126HDs
C319A Abstract: SEMIX452GB126HDS Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX452GB126HDs E63532 C319A SEMIX452GB126HDS
SKM900GA12E4 Abstract: No abstract text available Text: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1311 A Tc = 80 °C 1007 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 2700 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SKM900GA12E4 SKM900GA12E4
Untitled Abstract: No abstract text available Text: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1305 A Tc = 80 °C 1003 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 2700 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SKM900GA12E4
Untitled Abstract: No abstract text available Text: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R SB I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N ZUU VAUU VBUU VSUU N WUU VCUU VTUU V@UU QJIN R TU I G*2)> VWUX J5 R WB YEH M[[J TC¥UW? M[[J TC]UW? M[[$ TC¥UW?	Original	PDF
24N10 Abstract: No abstract text available Text: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C	OCR Scan	PDF	IXFK24N100 24N100 to150 24N10
Untitled Abstract: No abstract text available Text: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc	OCR Scan	PDF	90N30 PLUS247â
ixgk32n60 Abstract: No abstract text available Text: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms	OCR Scan	PDF	32N60A 32N60AS T0-247 32N60AS) O-247 B2-65 ixgk32n60

TC 620 Search Results

TC 620 Price and Stock

KOA Speer Electronics Inc RK73H1HTTC6202F

SEI Stackpole Electronics Inc RNMF14FTC620R

SEI Stackpole Electronics Inc RNMF14FTC620K

Microchip Technology Inc TC620CVOA713

SEI Stackpole Electronics Inc RNF12FTC620R

TC 620 Datasheets (76)

TC 620 Datasheets Context Search

R075

YAGEO TYPE CR

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SID200S12

SII200S12

SDI200S12

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discharge diode

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C319A

SKM900GA12E4

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24N10

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ixgk32n60