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    Quest Components TBP24S81N 16
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    TBP24S81 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TBP24S81 Texas Instruments STANDARD AND LOW POWER PROGRAMMABLE READ-ONLY MEMORIES Original PDF
    TBP24S81 Texas Instruments 2K x 4 TTL PROM Memory Scan PDF
    TBP24S81J Texas Instruments STANDARD AND LOW POWER PROGRAMMABLE READ-ONLY MEMORIES Original PDF
    TBP24S81J Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    TBP24S81J Texas Instruments Standard and low power programmable read-only memory, 2048 x 4 bit, 20ns Scan PDF
    TBP24S81MJ Texas Instruments PROM, Parallel, 8Kbit Density, 5V Supply, 18 CDIP Package Original PDF
    TBP24S81MJ Texas Instruments Standard and low power programmable read-only memory, 2048 x 4 bit, 20ns Scan PDF
    TBP24S81N Texas Instruments STANDARD AND LOW POWER PROGRAMMABLE READ-ONLY MEMORIES Original PDF
    TBP24S81N Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    TBP24S81N Texas Instruments Standard and low power programmable read-only memory, 2048 x 4 bit, 20ns Scan PDF

    TBP24S81 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original
    ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TBP24S81 8192 BITS 2048 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP24S81 TBP24S81 J OR NPACKAGE (TOP VIEW) (5) AO - no Q3 A2C 7 12 ] Q2 A10 C 8 GND C 9 11 2 Q3 (7) A2 (4) A-Ï A4 A5 (3) (14)


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    TBP24S81 TBP24S81 PDF

    tbp24s10

    Abstract: No abstract text available
    Text: TBP28LA22 2048 BITS 256 WORDS BY 8 BITS LOW-POWER PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP28LA22 TBP28LA22 J OR N PACKAGE PROM 256 X 8 AO A1 A2 A3 A4 A5 A6 A7 (TOP VIEW) (1) (2 ) AÙ (3) A£ (4) A£ (5)


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    TBP28LA22 tbp24s10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TBP28L42 4096 BITS 512 WORDS BY 8 BITS LOW-POWER PROGRAM M ABLE READ-ONLY MEM ORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP28L42 TBP28L42 J OR N PACKAGE PROM 5 1 2 X 8 AO A1 A2 A3 I ( 1) ( 2) (3) (4) II (5) A4 A 35 -. Ü2L M a — 511


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    TBP28L42 PDF

    74S301

    Abstract: TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 82LS181 N82LS181 S82LS181 N82S141 TBP28P86
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 9 2 -BIT BIPOLAR P R O M 1 0 2 4 X 8 DESCRIPTION The 82LS181 is field programmable, which mea ns that custom patterns are immediately available by following the fusing procedure given in this data manual. The 82LS18I is


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    8192-BIT 1024x8) 82LS181 82LS181 82LS18I N82LS181, n82hs185 n82s25 n82s16 74S301 TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 N82LS181 S82LS181 N82S141 TBP28P86 PDF

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


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    MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137 PDF

    27S43

    Abstract: No abstract text available
    Text: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs


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    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


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    8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137 PDF

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


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    384-BIT 2048x8) 82S191 82S191 N82S191 N82HS185 N82S25 N82S16 6301-1 prom SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C PDF

    KCK7684

    Abstract: MB7128L MB7128L-W MCM7685 N82HS185 N82HS185A N82S185 TBP24S81 TBP24SA81 HM-7684
    Text: - 6 3 8 4 0 X 'i 7 f iâ g Ï E f f l m & ít £ CC TAAC max ns) TCAC max (ns) y / U t t TON ta x (ns) TOE tax (ns) M Ì TOD max (ns) VDD o r VCC (V) (Ta=25°C) a m typ (mA) I DP max (mA) 1 IL/VIIL max (mA/V) jj/ m VIL max (V) ta ñ / m i i i ± I IH /V IIH


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    MB7128L MB7128L-W KB7128Y TBP24SA81 UPB427C/D 048X4) 18PIN 63PS840/841 HM7684/85 KCK7684 MCM7685 N82HS185 N82HS185A N82S185 TBP24S81 HM-7684 PDF

    TBP28L22

    Abstract: No abstract text available
    Text: TBP28L166 16,384 BITS 2084 WORDS BY 8 BITS LOW-POWER PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP28L166 TBP28L16€ NW PACKAC PROM 2048 X 8 (8 ) AO- (TOP VIEW (7) A1 (5) A3 (4) A4« (3) A 5- 2047 (2 ) A6 ( 22 ) A9


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    TBP28L166 TBP28L166 TBP28L16 TBP28L22 PDF

    TBP28L22

    Abstract: TBP28LA22
    Text: TBP28L22 2048 BITS 256 WORDS BY 8 BITS LOW-POWER PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP28L22 J OR N PACKAGE TBP28L22 PROM 256 X 8 A1 * (3) A2* (4) A3(5) A4(17) A5(18) A6 255 ~J2SLfcJ G2 G i i is) . j ^ AV AV


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    TBP28L22 TBP28LA22 PDF

    Untitled

    Abstract: No abstract text available
    Text: TBP24SA81 8192 BITS 2048 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP24SA81 A5 c A4 c A3 c AO c A1 c A2 A10 GND c (14) —uo (13) ni (12) Q2 (11) Q3 2 3 4 00 5 TBP24SA81 J OR N PACKAGE


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    TBP24SA81 TBP24SA81 A10-- PDF

    Creative IC CT 1975

    Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161
    Text: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.


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    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


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    MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41 PDF

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


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    8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C PDF

    Untitled

    Abstract: No abstract text available
    Text: TBP28L46 4096 BITS 512 WORDS BY 8 BITS LOW-POWER PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol A V (4) A4 > A eFn (3) A5 A V ( 1) A V (23) 8 ' G 4 J 2 Ü Ü ^ G4 G2 AV A V (2) A6 V A V (5) A3 G3 (9) a (6) A2 A8 °1 (7)


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    TBP28L46 TBP28L46 PDF

    as 15-hg

    Abstract: A1023 Y TBP28L22 a1023 TBP24S10 TBP24S41 TBP24SA10 TBP24SA41 TBP28S42 TBP28S46
    Text: SERIES 24 AND 28 STANDARD AND LOW POWER PROGRAMMABLE READ ONLY MEMORIES SEPTEMBER 1979-RE VIS E D AUGUST 1984 Expanded Family of Standard and Low Power PROMs • P-N-P Inputs for Reduced Loading On System BuffersyDrivers Titanium-Tungsten Ti-W Fuse Links for


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    1979-REVISED as 15-hg A1023 Y TBP28L22 a1023 TBP24S10 TBP24S41 TBP24SA10 TBP24SA41 TBP28S42 TBP28S46 PDF

    74aLS808

    Abstract: 74ALS677 74ALS468 SN74AS877 SN74LS630 SM54A NCE 7190 74ls631 SN74LS693 TTL Data Book for Design Engineers
    Text: ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS FUNCTION DEVICE AS1032 ALS1034 AS1034 Quad 2-Input OR Buffers/ Drivers A VAILABILITY NOW NOW NOW Hex Drivers NOW ALS1035 Hex Buffers with D-C Outputs NOW AS1036 Quad 2-Input NOR Line Driver NOW ALS1240


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    ALS1032 AS1032 ALS1034 AS1034 ALS1035 AS1036 ALS1240 ALS1241 ALS1242 ALS1243 74aLS808 74ALS677 74ALS468 SN74AS877 SN74LS630 SM54A NCE 7190 74ls631 SN74LS693 TTL Data Book for Design Engineers PDF

    SN7401

    Abstract: National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27
    Text: GENERAL INFORMATION ORDERING INSTRUCTIONS AND MECHANICAL DATA FUNCTIONAL INDEX/SELECTION GUIDE PRODUCT GUIDE ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS PROGRAMMABLE LOGIC ARRAYS BETA PRODUCTS EXPLANATION OF NEW LOGIC SYMBOLS CONNECTOR AND KEYBOARD PRODUCTS


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    SN54/74 SN54ALS8003 SN74ALS8003 SN7401 National Semiconductor 4045 transistor bf 175 74ALS569 74AS1008 SN7449 SN74ALS244A SN54ALS1000A SN74ALS519 SN54ALS27 PDF

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 PDF

    87s185

    Abstract: MB7128 82HM185 RAYTHEON ROM MB712 Fujitsu proms
    Text: D IN ññüm 2 0 4 8 X 82H M 185 8 1 9 2 B IT 4 HM OS ROM FEATURES GENERAL DESCRIPTION • • • • • • • • • • The 82HM 185 is a high speed 8192 bit read-only memory (ROM) organized 2048 words by 4 bits. The device is fabricated using Intersil’s SELOX H M O S technology, a


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    82HM185 630mW 82HM185C) 82HM185 82HM185C 82HM185M 82HM185C: 82HM185M: 87s185 MB7128 RAYTHEON ROM MB712 Fujitsu proms PDF

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330 PDF