Untitled
Abstract: No abstract text available
Text: TB16NB25 N - CHANNEL 250V - 0.220ft - 1 6A - TO-263 PowerMESH MOSFET TYPE V S TB16N B25 R D S o n Id < 0 .2 8 Q. 16 A dss 250 V . . TYPICAL R D S (on) = 0.220 £2 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED . EXTREMELY HIGH dv/dt CAPABILITY
|
OCR Scan
|
PDF
|
STB16NB25
220ft
O-263
TB16N
P011P6/E
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by TB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
MTB16N25E/D
|
Untitled
Abstract: No abstract text available
Text: : 1 I TKMS; T YP E : 6 A r ms TB£N TB6N TB6N TBPN TB6 N A T j M= : VRRM" " VDRM ! (V) 115°C 6 # 2 3 4 5 6 JUNCTION TEMPERATURE 25°0 :[TSM ; xE ir - tdm ±VfjT 1ilq-j- : ± I H :± vtm 'StxTM “ t jm ! » T .TM max. ! max. 1 max. (A) : ( iTlA) (V) : ImA) : imA) ; ( V )
|
OCR Scan
|
PDF
|
TB10N
32A2s
40A2s
RthJ-C10O
TB25N
|
hall marking code A04
Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”
|
OCR Scan
|
PDF
|
2PHX14226-31
hall marking code A04
M143206EVK
differences uc3842a uc3842b
toshiba satellite laptop battery pinout
2N3773 audio amplifier diagram
toshiba laptop battery pack pinout
BC413
motorola transistor sj 5812
M68HC705X16
ABB inverter motor fault code
|
eel 16n
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet TB16N25E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d O e v lc e T M O S P O W E R FE T 16 A M P E R E S 250 VO LTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
TB16N25E
eel 16n
|