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TB111B Abstract: 111B SQ721 Polyfet RF Devices c1510 30-88MHz 850mu 10NF 20AWG 47PF Text: Polyfet RF Devices TB111B S8221->SQ721 Gain/Efficiency vs Freq; Vds=12.5Vdc Idq=.6A 80 50 70 40 60 30 Eff in % Gain in dB Efficiency Gain 50 Pout fixed at 10W 20 40 10 30 20 10 20 30 40 50 Freq in MHz Page 1 60 70 80 90 100 Polyfet RF Devices TB111B: Pout/Gain vs Pin, Freq = 30MHz; Vds = 12.5Vdc, Idq =.6A	Original	PDF	TB111B S8221-- SQ721 TB111B: 30MHz; 50MHz; 22AWG 850mu 111B Polyfet RF Devices c1510 30-88MHz 10NF 20AWG 47PF

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Abstract: 111B SQ721 Polyfet RF Devices c1510 30-88MHz 850mu 10NF 20AWG 47PF
Text: Polyfet RF Devices TB111B S8221->SQ721 Gain/Efficiency vs Freq; Vds=12.5Vdc Idq=.6A 80 50 70 40 60 30 Eff in % Gain in dB Efficiency Gain 50 Pout fixed at 10W 20 40 10 30 20 10 20 30 40 50 Freq in MHz Page 1 60 70 80 90 100 Polyfet RF Devices TB111B: Pout/Gain vs Pin, Freq = 30MHz; Vds = 12.5Vdc, Idq =.6A

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TB111B S8221-- SQ721 TB111B: 30MHz; 50MHz; 22AWG 850mu 111B Polyfet RF Devices c1510 30-88MHz 10NF 20AWG 47PF