RF1196
Abstract: DS1103
Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB
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RF1196SDM
RF1196
120dBm
28-pin
Module27409-9421
DS110330
RF1196
DS1103
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band 1 duplexer
Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB
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RF1196SDM
RF1196
120dBm
Comp27409-9421
DS110107
band 1 duplexer
RF1196
1085MHz
umts duplexer
LTE duplexer
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soli capacitors
Abstract: SOLI ELECTRONICS INDUSTRY 1017
Text: Axial Type Aluminum Electrolytic Capacitors TB Series : Bi - Polar Type 1. Features * Bi-polarized, suitable for crossover network of high-pitched and low-pitched sounds in high-fidelity sound systems. * Have excellent frequency characteristics * Low Leakage current and low dissipation factor.
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ASTM F1249
Abstract: ASTM D2103 EIA-583 F1249 F-1249 MIL-D-3464 JEDEC J-STD-033b F1249-90 ESD S11.11 MIL-D-3464 1 unit size
Text: TECHNICAL BULLETIN TB-2031 Statshield Moisture Barrier Bags Application Instructions Made in the United States of America Construction Desco’s Statshield® Moisture Barrier Bags manufactured from a static dissipative metalized laminated film. The metal layer of the Desco’s
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TB-2031
TB-2031
ASTM F1249
ASTM D2103
EIA-583
F1249
F-1249
MIL-D-3464
JEDEC J-STD-033b
F1249-90
ESD S11.11
MIL-D-3464 1 unit size
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Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitors TB CE02 Type Features • 85℃, 1000 hours assured • Bi-polarized, excellent high frequency response characteristic • Designed specifically for crossover network in Hi-Fi sound • Suitable for improving audio tone and speaker network
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250hrs.
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Untitled
Abstract: No abstract text available
Text: DESCO INDUSTRIES INC. Technical Bulletin TB-7026 Statguard Low Residue Floor Stripper Application Instructions Made in the United States of America Figure 1. Statguard® Low Residue Floor Stripper Description Statguard® Low Residue Floor Stripper is a strong,
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TB-7026
TB-7026
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TB-3042
Abstract: TR-53 clothing FTMS-101C
Text: TECHNICAL BULLETIN TB-3042 Heavy Duty Cotton Poly ESD Smocks Installation and Maintenance Made in the United States of America in the garment are designed to maintain electrical continuity from panel to panel and from sleeve to sleeve in accordance with the ESD Association
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TB-3042
TB-3042
TR-53
clothing
FTMS-101C
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TB-595
Abstract: tb 595 scheme electronics transistor yb tb595 B2099
Text: TB-595+ N1 SMA F 10nF 12x06 IF OUT B20-14F13+ 1 1 B20-99-24-03+ IF OUT 2 B1 A1 B2 A2 B3 A3 GND 3 LE DUT VCC RF/IF DATA CLK B20-99-24-03+ 12 11 B1 A1 B2 A2 B3 A3 10 SMA F VCC VCO RF B20-14F13+ 4 SMA F VCC VCO IF VCC VCO RF 9 1 REF IN B20-14F13+ 1 5 REF IN GND
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TB-595+
12x06
B20-14F13+
B20-99-24-03+
B20-99-24-02+
TB-595
tb 595
scheme electronics
transistor yb
tb595
B2099
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lelon
Abstract: r56 ce m series lelon
Text: IllUKÜt \ Aluminum Electrolytic Capacitors TB/TBL CE02 Type Features • 85°C, 1000 hours assured, • Bi-polarized, excellent high frequency response characteristic • Designed specifically for crossover network in Hi-Fi sound • Suitable for improving audio tone and speaker network
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100uF
lelon
r56 ce
m series lelon
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Untitled
Abstract: No abstract text available
Text: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller
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28F256A
ER-20,
ER-24,
RR-60,
AP-316,
AP-325,
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SIEMENS 3 TB 40 12 - 0B
Abstract: TLE4285G
Text: SIEMENS • 8235b05 Low-Drop Voltage Regulator D D Tb?!! 252 TLE 4285G Target Data Sheet 1 Overview 1.1 • • • • • • • • Features Wide operation range: 6 V to 45 V Wide temperature range: - 40 °C to 150 °C Low quiescent current consumption: 80 nA
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8235b05
4285G
4285G
A23SbG5
AED02192
TLE4285G
SIEMENS 3 TB 40 12 - 0B
TLE4285G
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Untitled
Abstract: No abstract text available
Text: m u rn s K PM100CVA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In tB lH /T IO d M O d u lO Three Phase IGBT Inverter Output 100 Amperes/1200 Volts TERMINAL CODE 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14.
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PM100CVA120
Amperes/1200
20kHz.
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2N4211
Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629
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f\15i5TDR
2N3773
N5629
N5630
2N5631
2N6259
2N6359
2N3237
N3597
2N3598
2N4211
TO63
2N3599
2N3772
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TO63
Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629
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f\15i5TDR
2N3773
N5629
N5630
2N5631
2N6259
2N6359
2N3237
N3597
2N3598
TO63
2N3599
2N3772
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Hybrid Junction 20 - 300 MHz HH-105 V2.00 Features Functional Diagram • 0° - 1 8 0 ° H ybrid in TO -5 P a ck a g e • H igh ]so ]a tb n Guaranteed Specifications’ from 55 c to+85 °c Frequency Range 20-300 MHz Insertion Loss (Less Coupling)
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HH-105
IL-STD-883
HH-105
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da 601
Abstract: No abstract text available
Text: NQTÇ T his p rin t is th» property of and mtoo4<*s p ro p rietary designs of T < DUPONT CWPANT. No p art of tb* «»sign s*o«n on t h is p rin t «*y toe used in any *«y »itHout the p r it ten consent of DUPONT ELECTRONICS. Nee Cumberland. PA. PRODUCT NO
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OPTi chipset 486
Abstract: 82C496 opti 486 82C497 opti 82c496 DATV opti 486 chipset
Text: V12 PRELIMINARY O PT ï'S D XB B 82C497 f> I*»; OPTi-DXBB PC/AT Chipset 82C497 PRELIMINARY 82C497 DATA BOOK Version 1.2 January 16,1992 PAGE 1 hλ g-l-l-1 CACHE READ HIT ' TÍ I TB • -I Ta h -3-2 CACH6 RCAO HIT Tt • Ta » TÄ I M « CACHfi N R I T E H X T „ |
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82C497
82C497)
82C497
OPTi chipset 486
82C496
opti 486
opti 82c496
DATV
opti 486 chipset
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Untitled
Abstract: No abstract text available
Text: 7“ a n A M P company GaAs SPDT Reflective Switch DC - 3 GHz with TTL/CMOS Control Input SW10-0312 V4.00 CR-9 Features • HhtegialD river • Low DC P o w e rC o n su m p tb n • TTL an d CM O S Iip u tC o m p a t b J s • Surface M ou n tP ackage •
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SW10-0312
Specifications12
DC-3000
DC-2000
DC-1000
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Untitled
Abstract: No abstract text available
Text: an A M P company Digital Attenuator, 30 dB, 4 Bit DC - 2 GHz AT-232 V3.00 Features CR-6 • A ttenuation 2 dB Step s to 30 dB • Tem p e la tin e Stability ± 0 .1 8 dB fern -55°C to +85°C T y p ic a l • U Jb a Low D C Pow e r Consum p tb n 0.050 TYP
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AT-232
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H20R
Abstract: M7 RECTIFIER
Text: TB L2/300 7004 J V_ RF POWER TRIODE QUICK REFERENCE DATA F requency MHz C te le g r. C an m od. v a (V) W0 (W) Va (V) W0 (W) 2500 2000 1750 1600 1300 475 460 405 350 155 2000 1600 1400 1280 1040 505 370 275 225 107 175 300 470 600 900 In d u strial o sc illa to r c la s s C
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TBL2/300
H20R
M7 RECTIFIER
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Untitled
Abstract: No abstract text available
Text: fax id: 1045 JtÊ Ë t Cí ^ W ' « Y 'T w v W J [ v w I • \ / I \/W % r H tb b -32K X 32 Synchronous-Pipelined Cache RAM Features Functional Description • Low (660 |^W sta n d b y p o w er (f=0, L versio n ) • S u p p o rts 7 5 -M H z bus fo r P en tium and Pow erPC ™
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--------32K
CY7C1335
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Matched GaAs SPST Switch DC - 3 GHz with TTL/CMOS Control Input SW-311 V3.00 Features CR-9 • In te g ra l Silicon D riv e r • U I r a Low Pow e r Consum p t b n • TTL and CM0 S In p u tC o m p a tb Je • F astS w i c h i i g S p e e d : 4 n s T y p i a l
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SW-311
DC-3000
DC-2000
DC-1000
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MA87728-M01
Abstract: 10.525 ghz transceiver Gunn Oscillator WR90 TS 4140
Text: an A M P com pany Voltage Controlled Oscillator Transceiver 1 0 .5 2 5 G H z MA87728-M01 V3.00 Features In exp en siv e X -b a n d T ra n sc e iv e r C an b e FM M od u iated 10 mW T a n s a ì t e r P o w e r Sensitivity -95 d B c R ugged M e c h a n ic a lC o n s tru c tb n
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MA87728-M01
MA87728-M01
10.525 ghz transceiver
Gunn Oscillator WR90
TS 4140
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Untitled
Abstract: No abstract text available
Text: a n A M P co m p a n y Surface Mount PIN Diodes MA4P Series V 2.00 SOT-23 Features • Surface M o u n tP a c k a g e • Low C a p a c ita n c e D io d e s • Low Loss Sw itch D iod es • Low D is t o r tb n A tte n u a to r D io d e s • F a s t Sw itching D iod es
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OT-23
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