MOC3063
Abstract: MOC3063M IEC68 MOC3063S MOC3063S-TA1 VDE0110 TB 1275 an
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-on Only FEATURES 1. This specification shall be applied to photocoupler. Model No. MOC3063 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : MOC3063-V : 1-channel type * Wide lead spacing package :
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MOC3063
MOC3063-V
MOC3063M-V
MOC3063S-V
MOC3063S
MOC3063M
MOC3063-V
BNS-OD-C131/A4
IEC68
MOC3063S-TA1
VDE0110
TB 1275 an
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cny17f
Abstract: CNY17F-1 CNY17F-1M-V CNY17F-1-V CNY17F-2 CNY17F-2M-V CNY17F-2-V CNY17F-3 CNY17F-3M-V CNY17F-4
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. CNY17F-1 / CNY17F-2 / CNY17F-3 / CNY17F-4 as an option. 2. Applicable Models Business dealing name * Dual-in-line package :
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CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1-V
CNY17F-2-V
CNY17F-4-V
CNY17F-1M-V
CNY17F-2M-V
cny17f
CNY17F-3M-V
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40015248
Abstract: LTV8D52-V
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES 1. This specification shall be applied to photocoupler Model No. April 2010 LTV-852/LTV-8D52 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV852-V / LTV8D52-V
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LTV-852/LTV-8D52
LTV852-V
LTV8D52-V
LTV852M-V
LTV8D52M-V
LTV852S-V
LTV8D52S-V
LTV852STA1-V
LTV8D52STA1-V
LTV-852
40015248
LTV8D52-V
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LTV-123-V
Abstract: IEC68 LTV-123 LTV-123M LTV-123M-V LTV-123S LTV-123S-TA1-V LTV-123S-V
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-123 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV-123-V : 1-channel type * Wide lead spacing package :
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LTV-123
LTV-123-V
LTV-123M-V
LTV-123S-V
LTV-123S-TA1-V
LTV-123M
LTV-123S
LTV-123
BNS-OD-C131/A4
LTV-123-V
IEC68
LTV-123M-V
LTV-123S
LTV-123S-TA1-V
LTV-123S-V
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PC 814 photocoupler
Abstract: LTV824-V Lite-On LTV814 LTV814-V LTV824STA1-V mark code t4 diode LTV-814 LTV814STA1-V LTV814S-V LTV824M-V
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-814 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV814-V : 1-channel type / LTV824-V : 2-channel type /
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LTV-814
LTV814-V
LTV824-V
LTV844-V
LTV814M-V
LTV824M-V
LTV844M-V
LTV814S-V
LTV824S-V
LTV844S-V
PC 814 photocoupler
LTV824-V
Lite-On LTV814
LTV814-V
LTV824STA1-V
mark code t4 diode
LTV814STA1-V
LTV814S-V
LTV824M-V
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LTV846S
Abstract: LTV846-V LTV-816 b 816 4pin 826m LTV816S LTV816S-V LTV826S-V LTV846 mark code t4 diode
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-816 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV816-V : 1-channel type / LTV826-V : 2-channel type /
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LTV-816
LTV816-V
LTV826-V
LTV846-V
LTV816M-V
LTV826M-V
LTV846M-V
LTV816S-V
LTV826S-V
LTV846S-V
LTV846S
LTV846-V
b 816 4pin
826m
LTV816S
LTV816S-V
LTV826S-V
LTV846
mark code t4 diode
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LTV817
Abstract: mark code t4 diode TB 1275 N DATA SHEET LTV817 photocoupler LTV817M-V LTV817S-V LTV817-V LTV827-V pc 817 LTV-817
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-817 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV817-V : 1-channel type / LTV827-V : 2-channel type /
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LTV-817
LTV817-V
LTV827-V
LTV847-V
LTV817M-V
LTV827M-V
LTV847M-V
LTV817S-V
LTV827S-V
LTV847S-V
LTV817
mark code t4 diode
TB 1275 N DATA SHEET
LTV817 photocoupler
LTV817M-V
LTV817S-V
LTV817-V
LTV827-V
pc 817
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mark code t4 diode
Abstract: CNY17-1M-V CNY17-1S-V CNY17-1-V CNY17-2M-V CNY17-2S-V CNY17-2-V CNY17-3M-V CNY17-3S-V CNY17-3-V
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES * High collector-emitter voltage VCEO = 70V * High input-output isolation voltage ( Viso = 5,000Vrms ) * Response time ( tr : TYP. 5µs at VCC = 10V, IC=2mA, RL = 100Ω ) * Current transfer ratio
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000Vrms
CNY17-1-V,
CNY17-2-V,
CNY17-3-V,
CNY17-4-V
CNY17-1M-V,
CNY17-2M-V,
CNY17-3M-V,
CNY17-4M-V
CNY17-1S-V,
mark code t4 diode
CNY17-1M-V
CNY17-1S-V
CNY17-1-V
CNY17-2M-V
CNY17-2S-V
CNY17-2-V
CNY17-3M-V
CNY17-3S-V
CNY17-3-V
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B43888
Abstract: epcos b43888c9475m
Text: Aluminum electrolytic capacitors Single-ended capacitors Series/Type: B43888 Date: November 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B43888
h/105
B43888
epcos
b43888c9475m
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F9N05
Abstract: f9n0 NCV8440STT1G NCV8440STT3G 024 diode
Text: NCV8440 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits http://onsemi.com • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • • Diode Clamp Between Gate and Source
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NCV8440
NCV8440/D
F9N05
f9n0
NCV8440STT1G
NCV8440STT3G
024 diode
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F9N05
Abstract: NCV8440
Text: NCV8440 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits http://onsemi.com • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • • Diode Clamp Between Gate and Source
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NCV8440
NCV8440/D
F9N05
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NTLMS4506N
Abstract: MOSfet 4392
Text: NTLMS4506N Advance Information Power MOSFET 30 A, 30 V N–Channel SO–8 Leadless The SO–8LL Leadless package uses the power QFN package technology. It’s footprint matches that of the standard SO–8 single die device. This Leadless SO–8 package provides low parasitic
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NTLMS4506N
r14525
NTLMS4506N/D
NTLMS4506N
MOSfet 4392
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NTLMS4505N
Abstract: 4392 MOSFET
Text: NTLMS4505N Advance Information Power MOSFET 31 A, 24 V N–Channel SO–8 Leadless The SO–8LL Leadless package uses the power QFN package technology. It’s footprint matches that of the standard SO–8 single die device. This Leadless SO–8 package provides low parasitic
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NTLMS4505N
r14525
NTLMS4505N/D
NTLMS4505N
4392 MOSFET
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ICS843001AGI-23
Abstract: ICS843001AGI-23LF ICS843001AGI-23LFT ICS843001AGI-23T ICS843001AI23 ICS843001I-23 ICS84332 OC48 Surge Protection sata
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS843001I-23 FEMTOCLOCKS CRYSTAL-TO-3.3V LVPECL/LVCMOS FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS843001I-23 is a highly versatile, low ICS phase noise LVPECL/LVCMOS Synthesizer HiPerClockS™ which can generate low jitter reference clocks
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ICS843001I-23
ICS843001I-23
44MHz
1Gb/10Gb
25MHz
843001AGI-23
ICS843001AGI-23
ICS843001AGI-23LF
ICS843001AGI-23LFT
ICS843001AGI-23T
ICS843001AI23
ICS84332
OC48
Surge Protection sata
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FX102-K
Abstract: ZVEI Tone decoder
Text: Selective Call Tone Decoders FX003 Obsolete Product For Information Only - Publication D /003 /4 February 1990 15-Tone Selcall Decoder CCIR, ZVEI, EEA, EIA Tone Sets Group Call and Data Capability ¡a. Excellent Noise Performance High Dynamic Range 4 Bit Data Output
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FX003
15-Tone
FX003QC
FX003QZ
FX003QE
FX003QA
FX003QZS
FX003*
FX102K
FX202
FX102-K
ZVEI Tone decoder
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PDF
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RF640
Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 IRF640 circuit IRF642 RF1S640
Text: IRF640, IRF641, IRF642, RF1S640, RF1S640SM H A R R IS S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 16A and 18A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF640,
IRF641,
IRF642,
RF643,
RF1S640,
RF1S640SM
TB334
IRF640
O-220AB
IRF640
RF640
IRF640 applications note
IRF641
RF1S640SM9A
IRF643
RF643
IRF640 circuit
IRF642
RF1S640
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SR35S
Abstract: No abstract text available
Text: 10 2.5 MIN. D ± 0 . I C ± 0. A -S 0 . 6 3 5 (C .2) PITCH 1 ^o ftf| -F □HI f n I z m e : : unf P T ÏÏÏÏÏÏ DETAIL FOR SOLDERING AREA (0 .2 7 ) T Y P . (4) 0 O .7± O .O 5 0 . 9 ± 0 . 0 5 5 .2 ! 0 . 3 5 M IN . O J A RECOMMENDED PCS PATTERN LAYOUT
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35MIN.
UL94V-O
UL94V-0
5509l-*
EN-02JAI021)
SR35S
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PDF
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Untitled
Abstract: No abstract text available
Text: 10 2.5 MIN. D ±0. C ±0. 4 B - 0 0.635 PITCH W fflY tlT T P JV ffflH DETAIL FOR SOLDERING AREA 5.2 : c o l i c : c l lo c i c o p e : coi 0 O .9 t Q.O5 CA 0 0.7±0.05 0.35MIN. C O .3 7 . I X d _ RECOMMENDED ROB PA77ERN LA70U7
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35MIN.
PA77ERN
LA70U7
53643-I674
53643-I074
SD-53643-003
EN-02JA
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PDF
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sn 16848
Abstract: No abstract text available
Text: W hpI HEWITT mLHM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 500 to 2000 MHz Technical Data UTO/UTC/PPA 2013 Series Features Description • Frequency Range: 500 to 2000 MHz The 2013 Series is a thin-film high power GaAs FET RF amplifier
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PP-38
sn 16848
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PDF
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x7ta
Abstract: LT1220
Text: SEP 2 5 1992 r t P ^ E L D M O lM A l^ Y r u r LTC1 2 7 3 / LTC1 2 7 5 / LTC1 2 7 6 m TECHNOLOGY 12- Bit, 2.7 jL / s , 300 kHz Sampling ADCs August 1992 F€flTUR€S DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1273, LTC1275 and LTC1276 are 2.7ps, 300kHz,
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LTC1273,
LTC1275
LTC1276
300kHz,
12-Bit
AD7572
D3/11.
TECHNOLOGYCORPORATION1992
x7ta
LT1220
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Untitled
Abstract: No abstract text available
Text: 10 2.5 MIN. D ±0. C ±0. 0.635 j 0 .3 IT5 TYP.I2 PITCH O +l DETAIL FOR SOLDERING AREA É C :3 | t^ 3 D l RECOM M ENDED a) N O TES urn MATERI AL / t t v V i f J ^ X A y L C P , a s , H0USING:G.F.LCP,WHITE.UL94V-0 L= i? C VACUUM f* 0 NO t — 0 =2 ) T E R M IN A L s C O P P E R
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UL94V-0
SD-52901-015
EN-02JAI021)
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PDF
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TB 1275 N
Abstract: 0227D
Text: 10 1.5 MIN. c±o. I D±0. B - 0 0.6 55 PITCH U_UUUUUUl) ( 05) mmx'jj VACUUM D E T A IL FOR S O L D E R IN G id : u nl i l t p z □ ii AREA AREA c h i i e : : u n i 5.2 0o.g±o.Q5 o. I A ^ y a O O O O 'O O O O a y r r ir in E M D M : 0O.7±O. O5
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35MIN.
SD-53647-003
EN-02JA
TB 1275 N
0227D
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PDF
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din 867
Abstract: 842 ic 41585
Text: 13 12 10 M A T E R IA L N O TES: 1. M A T E R IA L H O U S IN G : G L A S S F IL L E D 94V-0, 2. F IN IS H : S E L E C T G O LD SELEC T BO TH POW ER PLU G PLU G 2 PLUG 3 PLU G 4 PLUG T E R M IN A L S PRODUCT 5 SHEET PARTS PEG ARE H O LES M ATES M O LEX TO
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SD-45984-100_
din 867
842 ic
41585
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PDF
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Untitled
Abstract: No abstract text available
Text: 10 5 MIN. D±0„ C±0„ B 0.635 PITCH (3. 6) W f f lT t lY Y iY * D E T A IL FOR S O LD E R IN G m z: zzdoiIIoiz : zm p p z Z J ^ M : D ip Q Q M X _ E T E _ x y a 0 0 0 0 |0 0 0 0 a y x _ E T E _ X E Q 3 n M 0O.9±O.O5 I 10. 11A 0O.7±O.O5 0.35MIN. RECOMMENDED
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35MIN.
SD-53627-002_
EN-02JAI021)
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PDF
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