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    TANAKA GOLD WIRE CURRENT Search Results

    TANAKA GOLD WIRE CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    TANAKA GOLD WIRE CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    0118-B

    Abstract: 0118b tanaka gold wire 1.0 mil ts333 tanaka TS3332LD tanaka CSW0118-BD DM6030HK TS3332LD DM6030HK-Pt
    Text: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V


    Original     		CSW0118-BD 22-Jan-07 CSW0118-BD 0118-B 0118b tanaka gold wire 1.0 mil ts333 tanaka TS3332LD tanaka DM6030HK TS3332LD DM6030HK-Pt PDF

    0118-B

    Abstract: 0118B tanaka gold wire 1.0 mil CSW0118-BD DM6030HK TS3332LD tanaka epoxy
    Text: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V


    Original     		CSW0118-BD 22-Jan-07 CSW0118-BD 0118-B 0118B tanaka gold wire 1.0 mil DM6030HK TS3332LD tanaka epoxy PDF

    tanaka TS3332LD

    Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
    Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


    Original     		12-May-08 P1032-BD MIL-STD-883 parD-000V XP1032-BD-EV1 XP1032-BD tanaka TS3332LD XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK PDF

    tanaka gold wire

    Abstract: tanaka TS3332LD epoxy XP1056-BD XP1056-BD-EV1 XP1056-BD-000V tanaka TS3332LD
    Text: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


    Original     		12-May-08 P1056-BD MIL-STD-883 bD-000V XP1056-BD-EV1 XP1056-BD tanaka gold wire tanaka TS3332LD epoxy XP1056-BD-EV1 XP1056-BD-000V tanaka TS3332LD PDF

    XP1054-BD

    Abstract: XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD
    Text: 33.0-36.0 GHz GaAs MMIC Power Amplifier P1054-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 3W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +34.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


    Original     		12-May-08 P1054-BD MIL-STD-883 parD-000V XP1054-BD-EV1 XP1054-BD XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD PDF

    Untitled

    Abstract: No abstract text available
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 28-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		28-May-08 P1057-BD MIL-STD-883 surfaD-000V XP1057-BD-EV1 XP1057-BD PDF

    tanaka gold wire

    Abstract: tanaka wire XP1057-BD DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 18 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		12-May-08 P1057-BD MIL-STD-883 surfaD-000V XP1057-BD-EV1 XP1057-BD tanaka gold wire tanaka wire DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy PDF

    tanaka gold wire

    Abstract: tanaka au wire DM6030HK tanaka TS3332LD
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		16-Oct-08 P1070-BD MIL-STD-883 chipD-000V XP1070-BD-EV1 XP1070-BD tanaka gold wire tanaka au wire DM6030HK tanaka TS3332LD PDF

    tanaka TS3332LD

    Abstract: TS3332LD
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		16-Oct-08 P1057-BD MIL-STD-883 sD-000V XP1057-BD-EV1 XP1057-BD tanaka TS3332LD TS3332LD PDF

    tanaka TS3332LD

    Abstract: tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		28-Sep-08 P1070-BD MIL-STD-883 chD-000V XP1070-BD-EV1 XP1070-BD tanaka TS3332LD tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD PDF

    XP1055-BD

    Abstract: tanaka TS3332LD epoxy
    Text: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


    Original     		12-May-08 P1055-BD MIL-STD-883 parD-000V XP1055-BD-EV1 XP1055-BD tanaka TS3332LD epoxy PDF

    tanaka TS3332LD

    Abstract: tanaka TS3332LD epoxy XP1059 XP1059-BD-000V DM6030HK-Pt tanaka gold wire TS3332LD XP1059-BD-EV1 tanaka gold wire current tanaka wire
    Text: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power


    Original     		12-May-08 P1059-BD MIL-STD-883 passivatiD-000V XP1059-BD-EV1 XP1059-BD tanaka TS3332LD tanaka TS3332LD epoxy XP1059 XP1059-BD-000V DM6030HK-Pt tanaka gold wire TS3332LD XP1059-BD-EV1 tanaka gold wire current tanaka wire PDF

    tanaka wire

    Abstract: dm6030hk tanaka epoxy
    Text: 14.0-16.0 GHz GaAs MMIC Power Amplifier P1058-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power


    Original     		12-May-08 P1058-BD MIL-STD-883 passivatiD-000V XP1058-BD-EV1 XP1058-BD tanaka wire dm6030hk tanaka epoxy PDF

    XP1071-BD-000V

    Abstract: tanaka gold wire ts333 tanaka au wire XP1071 XP1071-BD-EV1 tanaka TS3332LD tanaka TS3332LD epoxy
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power


    Original     		28-Sep-08 P1071-BD MIL-STD-883 surfaD-000V XP1071-BD-EV1 XP1071-BD XP1071-BD-000V tanaka gold wire ts333 tanaka au wire XP1071 XP1071-BD-EV1 tanaka TS3332LD tanaka TS3332LD epoxy PDF

    XX1007-BD

    Abstract: tanaka TS3332LD DM6030HK TS3332LD XX1007-BD-000V XX1007-BD-EV1 tanaka epoxy
    Text: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD August 2007 - Rev 29-Aug-07 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing


    Original     		X1007-BD 29-Aug-07 MIL-STD-883 XX1007-BD XX1007-BD XX1007-BD-000V XX1007-BD-EV1 XX1007 tanaka TS3332LD DM6030HK TS3332LD XX1007-BD-000V XX1007-BD-EV1 tanaka epoxy PDF

    tanaka gold wire current

    Abstract: DM6030HK TS3332LD XX1007-BD XX1007-BD-000V XX1007-BD-EV1 tanaka
    Text: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD January 2009 - Rev 14-Jan-09 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing


    Original     		X1007-BD 14-Jan-09 MIL-STD-883 XX1007-BD XX1007-BD-000V XX1007-BD-EV1 XX1007 tanaka gold wire current DM6030HK TS3332LD XX1007-BD-000V XX1007-BD-EV1 tanaka PDF

    tanaka TS3332LD epoxy

    Abstract: DM6030HK TS3332LD XX1007-BD XX1007-BD-000V XX1007-BD-EV1 tanaka bonding wire tanaka
    Text: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD February 2008 - Rev 13-Feb-08 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing


    Original     		X1007-BD 13-Feb-08 MIL-STD-883 XX1007-BD XX1007-BD-000V XX1007-BD-EV1 XX1007 tanaka TS3332LD epoxy DM6030HK TS3332LD XX1007-BD-000V XX1007-BD-EV1 tanaka bonding wire tanaka PDF

    tanaka TS3332LD epoxy

    Abstract: XP1073-BD P1073-BD ka-band bare
    Text: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original     		14-Jul-08 P1073-BD MIL-STD-883 XP1073-BD-000V tanaka TS3332LD epoxy XP1073-BD ka-band bare PDF

    XP1072-BD

    Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
    Text: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		14-Jul-08 P1072-BD MIL-STD-883 XP1072-BD-000V XP1072-BD ka-band bare xp1072-bd-000v XP1072 PDF

    ts333

    Abstract: tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt
    Text: 2.0-16.0 GHz GaAs MMIC Frequency Divider April 2007 - Rev 17-Apr-07 E1000-BD Features Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 E1000-BD MIL-STD-883 XE1000-BD XE1000-BD-000V XE1000-BD-EV1 XE1000 ts333 tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt PDF

    6OSC0460

    Abstract: DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 6OSC0460 DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 PDF

    tanaka TS3332LD epoxy

    Abstract: No abstract text available
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 tanaka TS3332LD epoxy PDF

    varactor diode application

    Abstract: No abstract text available
    Text: 6.8-7.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1003-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 Q1003-BD 100KHz MIL-STD-883 XQ1003-BD XQ1003-BD-000V XQ1003-BD-EV1 XQ1003 varactor diode application PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002 December 2005 - Rev 08-Dec-05 Features Chip Device Layout Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing


    Original     		08-Dec-05 X1002 125mA MIL-STD-883 PDF