Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 SD1527-8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS • DESIGNATED FOR HIGH POWER PULSE IFF ANDTACAN • 5.0 WATTS (min.) IFF 1030-1090MH!
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SD1527-8
1030-1090MH!
960-1215MH*
2502LFL
SD1527-B
SD1527-8
S6//14
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Untitled
Abstract: No abstract text available
Text: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1
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MS2552
MS2552
MS2575
MSC1665
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Untitled
Abstract: No abstract text available
Text: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min.
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MS2552
MS2552
MSC1665
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TACAN 41 RF transistor
Abstract: RF transistors TACAN MICROSEMI RF TRANSISTOR MS2552 MS2575
Text: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product
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MS2552
MS2552
MSC1665
TACAN 41 RF transistor
RF transistors
TACAN
MICROSEMI RF TRANSISTOR
MS2575
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TACAN 41 RF transistor
Abstract: TACAN 41 MSC81325M S042
Text: MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 325 W MIN. WITH 6.7 dB GAIN
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MSC81325M
81325M
MSC81325M
TACAN 41 RF transistor
TACAN 41
S042
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TACAN 41 RF transistor
Abstract: No abstract text available
Text: MSC81325M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 X .400 2NLFL DESCRIPTION: 1 The ASI MSC81325M is a Common Base Device Designed for DME and TACAN Pulse Applications. 3 2 FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting
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MSC81325M
MSC81325M
TACAN 41 RF transistor
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MSC81325M
Abstract: S042
Text: MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN
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MSC81325M
81325M
MSC81325M
S042
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AVD002P
Abstract: TACAN ASI10553
Text: AVD002P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI AVD002P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .1 0 0 x 4 5 ° FEATURES: C B • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold Metalization System
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AVD002P
AVD002P
ASI10553
TACAN
ASI10553
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MSC81325M
Abstract: S042
Text: MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN
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MSC81325M
81325M
MSC81325M
S042
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SO42
Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002
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PowerSO-10RF
PD54003
PD54008
PD55003
PD55008
PD55015
PD55025S
PD57002
PD57006
PD57018
SO42
STM 160-30
"class AB Linear" hf
PD55003 equivalent
SD57045
linear amplifier 470-860
LT5232
VHF lna 30 to
SD4100
SD2932 linear amplifier
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Untitled
Abstract: No abstract text available
Text: 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215 MHz Preliminary GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain,
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0912GN-600
55-KR
0912GN-600
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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Germanium itt
Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Text: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470
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P-100
N-1500
N-2200
Germanium itt
thyratron pl 21
Mallory Vibrator Data Book
National Electronics ignitrons
bat CR Li Mn lab test result
Helipot POTENTIOMETER
Bendix Transistors
selenium rectifier westinghouse
5000W AUDIO AMPLIFIER
6cl6
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combiner THEORY
Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Text: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective
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WP100318
combiner THEORY
amplifier 400W
GaN microwave amplifier 100W 28V
GaN amplifier 100W
DSASW0033875
transformer matsunaga
RFMD HEMT GaN SiC
transistor 3,5Ghz, power 100w
RF amplifier 400W
WP100318
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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d1536
Abstract: TRANSISTOR 8019 SD1536-08 TACAN transistor
Text: SGS-THOMSON S D 15 3 6 -0 8 iy RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 100 WATTS typ. IFF 1030 - 1090 MHz . 90 WATTS (min.) DME 1025 - 1150 MHz i 90 WATTS (typ.) TACAN 960 - 1215 MHz
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SD1536-08
d1536
TRANSISTOR 8019
TACAN transistor
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Untitled
Abstract: No abstract text available
Text: l i Ma jnm jf i.jninfii m Commerce Drive microsemi * «* Tel: 215 631-9840 Montgomeryvilie, P A 18936-1013 »"•«ÿ'WXPow ea-iijjy S U I 527-0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNATED FDR HIGH POWER PULSE !FF AMD TACAN . 5.0 WATTS (min.IIF F 1030-1090MH2.
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1030-1090MH2.
SD1527-B
05S/f
S45-S
132/S
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Untitled
Abstract: No abstract text available
Text: ü J S S j r x m r r \ ’> j ,x j t î l «n t n t m "f 4 0 C o m m e r c e D r iv e M ic ro s e m j SD152o.8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNED FOR PULSE POW ER IFF, DÍ4E, TACAN * 0 2 b W ATT tvp IFF 1030 1090M M ; « 0.20 WATT (tin .! PME 102Í»-1130MMZ
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SD152o
1090M
-1130MMZ
SCM520-08
24S/G
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Untitled
Abstract: No abstract text available
Text: M 2 fV I$ C § T S & fY I! 140 C o m m e rc e D riv e W fo n tg o m e iy v ilte , PA 1893 6-10 13 Tel: 215) 631-9840 SD1536-8 RF & MiCROWAVE TRANSISTORS IFF/D ME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF, DM!'' TACAN 100 W ATTS (typ.) IFF 1030-1090M Hz
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SD1536-8
1030-1090M
1215MH?
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Untitled
Abstract: No abstract text available
Text: n = ^ 7 J # . S G S -T H O M S O N M » E L B g T m [ ] f _ S D 1 5 2 8 - 0 8 RF & MICROWAVE TR AN SISTO R S _ A VIO N IC S APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 20 WATTS (typ. IFF 1030 - 1090 MHz
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SD1528-08
7G571
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Untitled
Abstract: No abstract text available
Text: SGS-IHOMSON MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR oo:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 325 W MIN. WITH 6.7 dB GAIN
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MSC81325M
MSC81325M
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Untitled
Abstract: No abstract text available
Text: /=T SGS-THOMSON ^ _ M S C 8 1 3 2 5 M 7 # . RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS P R E LIM IN AR Y DATA • R EFR AC TO R Y/G O LD M ETALLIZATIO N . EM ITTER BALLASTED ■ RUG G EDIZED VSW R oo:1 . IN PU T/O U TPU T M ATCHING
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MSC81325M
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transistor 7893
Abstract: transistor 9634
Text: Q ACT-120923 Ultra Low Noise Narrowband Amplifier 950 to 1250 MHz avan tek FEATURES APPLICATIONS • Ultra Low Noise Figure: 1.2 dB Typ • Narrow Frequency Range: 950 to 1250 MHz • Internal Voltage Regulator • Available With High Reliability Screening
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ACT-120923
transistor 7893
transistor 9634
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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