39S64160BT-8
Abstract: SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY
Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns
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39S64400/800/160BT
64-MBit
SPT03933
39S64160BT-8
SMD MARKING T5
application of sequential circuit
CAZ MARKING
marking RBY
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PDF
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P-TSOPII-54
Abstract: Q67100-Q1838 Q67100-Q2781
Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns
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39S64400/800/160BT
64-MBit
SPT03933
P-TSOPII-54
Q67100-Q1838
Q67100-Q2781
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PDF
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V54C3256804V
Abstract: No abstract text available
Text: MOSEL VITELIC V54C3256804VA HIGH PERFORMANCE 3.3 VOLT 32M X 8 SYNCHRONOUS DRAM 4 BANKS X 8Mbit X 8 PRELIMINARY -75 -8PC -8 System Frequency fCK 133MHz 125MHz 125MHz Clock Cycle Time (tCK3) 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256804VA
133MHz
125MHz
V54C3256804V
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39S256160T
Abstract: P-TSOPII-54
Text: HYB39S25640x/80x/16xT 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Target Information Rev. 0.5 High Performance: -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tAC2 6 8 ns • Multiple Burst Read with Single Write Operation • Automatic Command
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HYB39S25640x/80x/16xT
256MBit
P-TSOPII-54
400mil,
TSOPII-54
TSOP54-2
39S256160T
P-TSOPII-54
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PDF
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39S16802AT-10
Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation
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HYB39S1640x/80x/16xAT-8/-10
16MBit
39S16802AT-10
Q67100-Q1279
marking t8
smd CAY
Q67100-Q1323
Q67100-Q1327
Q67100-Q1333
Q67100-Q1335
P-TSOPII-44
BX-4T
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PDF
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smd CA-Y
Abstract: P-TSOPII-54 smd CAY
Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns
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39S128400/800/160CT
128-MBit
SPT03933
smd CA-Y
P-TSOPII-54
smd CAY
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PDF
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160ac
Abstract: PC100-222-620 160AC75 25L128
Text: HYB/E 25L128800/160AC 128-MBit Mobile RAM 128-MBit Synchronous Low-Power DRAM in Chipsize Packages Preliminary Datasheet Rev. 04/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz tCK3,MIN 7.5 8 ns tAC3,MAX
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25L128800/160AC
128-MBit
16Mbit
HYB/E25L128800/160AC
160ac
PC100-222-620
160AC75
25L128
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PDF
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V54C3256164VA
Abstract: No abstract text available
Text: MOSEL VITELIC V54C3256164VA HIGH PERFORMANCE 3.3 VOLT 16M X 16 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 16 PRELIMINARY -7 -8PC -8 System Frequency fCK 143MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256164VA
143MHz
V54C3256164VA
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PDF
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P-TSOPII-54
Abstract: caz smd PC133 registered reference design
Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10
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39S64400/800/160ET
64-MBit
P-TSOPII-54
caz smd
PC133 registered reference design
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PDF
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P-TSOPII-44
Abstract: CAZ MARKING AZ2 marking
Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge •
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HYB39S16400/800/160BT-8/-10
16MBit
P-TSOPI-44
400mil
PC100
P-TSOPII-44
CAZ MARKING
AZ2 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V54C3256164VA HIGH PERFORMANCE 3.3 VOLT 16M X 16 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 16 PRELIMINARY -75 -8PC -8 System Frequency fCK 133MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256164VA
133MHz
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PDF
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CA10
Abstract: V54C3256404VA t-16
Text: MOSEL VITELIC V54C3256404VA HIGH PERFORMANCE 3.3 VOLT 64M X 4 SYNCHRONOUS DRAM 4 BANKS X 16Mbit X 4 PRELIMINARY -7 -8PC -8 System Frequency fCK 143MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256404VA
16Mbit
143MHz
CA10
V54C3256404VA
t-16
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PDF
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V54C3256404VA
Abstract: CA10
Text: MOSEL VITELIC V54C3256404VA HIGH PERFORMANCE 3.3 VOLT 64M X 4 SYNCHRONOUS DRAM 4 BANKS X 16Mbit X 4 PRELIMINARY -7 -8PC -8 System Frequency fCK 143MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256404VA
16Mbit
143MHz
V54C3256404VA
CA10
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PDF
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Untitled
Abstract: No abstract text available
Text: V55C1128164MC 128Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 8M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • ■ ■ ■ Features
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V55C1128164MC
128Mbit
100MHz
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PDF
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CA10
Abstract: V54C3256804VA
Text: MOSEL VITELIC V54C3256804VA HIGH PERFORMANCE 3.3 VOLT 32M X 8 SYNCHRONOUS DRAM 4 BANKS X 8Mbit X 8 PRELIMINARY -7PC -7 -8PC -8 System Frequency fCK 143MHz 143MHz 125MHz 125MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3256804VA
143MHz
125MHz
CA10
V54C3256804VA
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PDF
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ba 5888
Abstract: V54C3256164VA
Text: MOSEL VITELIC V54C3256164VA HIGH PERFORMANCE 3.3 VOLT 16M X 16 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 16 PRELIMINARY -7 -8PC -8 System Frequency fCK 143MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256164VA
143MHz
ba 5888
V54C3256164VA
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PDF
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v54c3256164v application
Abstract: marking RBY V54C3256164
Text: MOSEL VITELIC V54C3256164V HIGH PERFORMANCE 3.3 VOLT 16M X 16 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 16 PRELIMINARY -75 -8PC -8 System Frequency fCK 133MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256164V
133MHz
v54c3256164v application
marking RBY
V54C3256164
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PDF
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marking RBY
Abstract: CA10 V54C3256804V
Text: MOSEL VITELIC V54C3256804V HIGH PERFORMANCE 3.3 VOLT 32M X 8 SYNCHRONOUS DRAM 4 BANKS X 8Mbit X 8 PRELIMINARY -75 -8PC -8 System Frequency fCK 133MHz 125MHz 125MHz Clock Cycle Time (tCK3) 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 6 ns
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Original
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V54C3256804V
133MHz
125MHz
marking RBY
CA10
V54C3256804V
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PDF
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Untitled
Abstract: No abstract text available
Text: V55C2128164VC 128Mbit MOBILE SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16 6 7PC 7 System Frequency fCK3 166 MHz 143 MHz 143MHz Clock Cycle Time (tCK3) 6.0ns 7.0 ns 7.0 ns Clock Cycle Time (tCK2) - 7.5 ns - Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V55C2128164VC
128Mbit
143MHz
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PDF
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LA 7873
Abstract: marking RBY MARKING AX5 CA10
Text: MOSEL VITELIC V54C3256404V HIGH PERFORMANCE 3.3 VOLT 64M X 4 SYNCHRONOUS DRAM 4 BANKS X 16Mbit X 4 PRELIMINARY -75 -8PC -8 System Frequency fCK 133MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns
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V54C3256404V
16Mbit
133MHz
V54C3256404V
LA 7873
marking RBY
MARKING AX5
CA10
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PDF
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V54C3128804
Abstract: No abstract text available
Text: MOSEL VITELIC V54C3128804VT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8 PRELIMINARY 7 75 8 System Frequency fCK 143 MHz 133 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7.5 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3128804VT
143/133/125MHz
V54C3128804
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PDF
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MARKING AX5
Abstract: No abstract text available
Text: MOSEL VITELIC V54C3128164VT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 PRELIMINARY 7 75 8PC System Frequency fCK 143 MHz 133 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7.5 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3128164VT
143/133/125MHz
MARKING AX5
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PDF
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P-TSOPII-54
Abstract: PC133 registered reference design
Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns tCK2 10 10 ns tAC2 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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HYB39S256400/800/160CT
256MBit
P-TSOPII-54
400mil
PC133
PC100
PC133 registered reference design
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PDF
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V54C328164VC
Abstract: No abstract text available
Text: MOSEL VITELIC V54C328164VC HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 PRELIMINARY 7 75 8 System Frequency fCK 143 MHz 133 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7.5 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C328164VC
143/133/125MHz
V54C328164VC
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PDF
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