Untitled
Abstract: No abstract text available
Text: PDM4M4060 256K x 32 CMOS Static RAM Module Features n n n n n n n High-density 8 megabit Static RAM module Low profile 72-lead SIMM and Angled SIMM Single In-line Memory Module) Very fast access time: 10 ns (max.) Surface mounted plastic components on an epoxy
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PDM4M4060
72-lead
PDM4M4060
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CAT28LV65
Abstract: No abstract text available
Text: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
28LV65
8mmx13
500/Reel
250ns
300ns
350ns
28LV65
CAT28LV65
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atmel 438
Abstract: Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 atmel 1044 ATMEL 1237
Text: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance: 104 Cycles
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0554C
06/98/xM
atmel 438
Atmel 546
atmel 446
ATMEL 1230
atmel 735
atmel 532
ATMEL 745
ATMEL 920
atmel 1044
ATMEL 1237
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MT16HTS51264HY-667
Abstract: MT47H512M8THM MT47H512M8
Text: 2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664H – 2GB1 MT16HTS51264H – 4GB For component specifications, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small outline dual in-line memory module
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200-Pin
MT16HTS25664H
MT16HTS51264H
200-pin,
PC2-3200,
PC2-4200,
PC2-5300
18-compatible)
Adj3900
09005aef821e5bf3/Source:
MT16HTS51264HY-667
MT47H512M8THM
MT47H512M8
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MT16HTS51264HY-667
Abstract: ddr2 micron MT47H512M8
Text: 2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664H – 2GB1 MT16HTS51264H – 4GB For component specifications, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small outline dual in-line memory module
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200-Pin
MT16HTS25664H
MT16HTS51264H
200-pin,
PC2-3200,
PC2-4200,
PC2-5300
18-compatible)
MT16HTS51264HY-40E
MT16HTS51264HY-667
ddr2 micron
MT47H512M8
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Untitled
Abstract: No abstract text available
Text: User’s Manual V850E/IF3, V850E/IG3 32-bit Single-Chip Microcontrollers Hardware V850E/IF3: PD70F3451 μPD70F3452 V850E/IG3: μPD70F3453 μPD70F3454 Document No. U18279EJ2V0UD00 2nd edition Date Published September 2008 N 2007 Printed in Japan [MEMO]
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V850E/IF3,
V850E/IG3
32-bit
V850E/IF3:
PD70F3451
PD70F3452
V850E/IG3:
PD70F3453
PD70F3454
U18279EJ2V0UD00
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gc 7137 ad
Abstract: 70F3453 U18726E TAA 611 B12 GP 113 LT 33 diode surface mount 433/gc 7137 ad pmc15-1 uPD70F3451 PD70F3452
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD70F3454F1-DA9-A)
U18279EJ3V0UD
gc 7137 ad
70F3453
U18726E
TAA 611 B12
GP 113
LT 33 diode surface mount
433/gc 7137 ad
pmc15-1
uPD70F3451
PD70F3452
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thomson washing machine wd 693
Abstract: E33334 M1487 gf98 PD70F3454GF-GAS-AX
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec V850e architecture manual
Abstract: LT 420 bsw 22 U18865E PD70F3916GF-GAT-AX diode p711 adnf PIC15
Text: User’s Manual 32 V850E/IG4, V850E/IH4 User’s Manual: Hardware RENESAS MCU V850E/Ix4 Microcontrollers V850E/IG4: PD70F3913 μPD70F3914 μPD70F3915 V850E/IH4: μPD70F3916 μPD70F3917 μPD70F3918 All information contained in these materials, including products and product specifications,
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V850E/IG4,
V850E/IH4
V850E/Ix4
V850E/IG4:
PD70F3913
PD70F3914
PD70F3915
V850E/IH4:
PD70F3916
PD70F3917
nec V850e architecture manual
LT 420
bsw 22
U18865E
PD70F3916GF-GAT-AX
diode p711
adnf
PIC15
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Untitled
Abstract: No abstract text available
Text: KM48C2000A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: ' The Samsung KM48C200QA/AL/ALLVASL is a high speed CMOS 2,097,152 b it x 8 Dynamic Random Access Memory. Its design is optim ized for high
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KM48C2000A/AL/ALL/ASL
KM48C200QA/AL/ALLVASL
KM48C2000A/AL/ALL/ASL-5
KM48C2000A/AIVALL/ASL-6
110ns
KM48C2000A/AL/ALL/ASL-7
130ns
KM48C2000A/AL/ALL/ASL-8
150ns
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Untitled
Abstract: No abstract text available
Text: W24257AJ-8N ¡’inbond = 7 Electronics Corp. smt:7 32K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24257AJ-8N is a high speed, low power CMOS static RAM organized as 32768 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high
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W24257AJ-8N
W24257AJ-8N
28-pin
28-ptn
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W24L257AJ-15
Abstract: No abstract text available
Text: W24L257A íinbond Electronics Corp. 32K X 8 HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L257A is a high-speed, low-power CMOS static RAM organized as 32768 x 8 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high
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W24L257A
W24L257A
28-pin
W24L257AJ-15
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C10G0 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C1000
KM416C1000-7
KM416C1000-8
KM416C1000-10
130ns
150ns
180ns
KM416C10G0
KM416C1000
200/js
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Untitled
Abstract: No abstract text available
Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page
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HM5116100B
216-word
ADE-203-371A
mW/385
mW/358
16-bit
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Untitled
Abstract: No abstract text available
Text: C A T A LY S T Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
CAT28LV65
CAT28LV65NI-25T
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6400L-A5G
Abstract: d4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/iPD42S16400L,
4216400L,
42S17400L,
4217400L
JUPD42S16400L,
42S17400L
6400L-A5G
d4216400
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NEC uPD 833
Abstract: NEC 4216160
Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
50-pin
42-pin
VP15-207-2
NEC uPD 833
NEC 4216160
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T1A12
Abstract: CAT28LV65
Text: I//// C R T R L Y S T Preliminary • ■ III S E M I C O N D U C T O R CAT28LV65 64K-Bit CMOS E2PROM FEATURES ■ 3.0V to 3.6V Supply CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns Automatic Page Write Operation: - 1 to 32 Bytes in 5ms
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CAT28LV65
64K-Bit
250/300/350ns
CAT28LV65
28LV65
T1A12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C1000 is a CMOS high speed 1,048,576 b it x 16 D ynam ic Random A ccess Memory. Its de sig n is o p tim ized fo r high pe rform ance a p p lica tio n s
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KM416C1000
KM416C1000
130ns
150ns
100ns
180ns
KM416C1000-7
KM416C1000-8
KM416C1000-10
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Untitled
Abstract: No abstract text available
Text: IB M 11 M 16730C B 16M x 72 D R A M M O D U LE Features • 1 6 8 Pin J E D E C S tandard, 8 Byte D ual In-line M e m o ry M odule • Au contacts • 1 6 M x 7 2 F ast P a g e M o d e D IM M • System P erform ance Benefits: • P erform ance: • O ptim ized for E C C applications
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16730C
110ns
130ns
07H1729
MMDL18DSU-00
IBM11M16730CB
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4C40H
Abstract: PCMCIA Flash Memory Card 512K a1a17 20H-1T Fujitsu MBM28F010
Text: March 1994 Edition 2.0 FUJITSU DATA SHEET MB98A8601/8602-17 FLASH MEMORY CARD 256K/512K-BYTE FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD The Fujitsu MB98A8601 and MB98A8602 are Flash electrically erasable and programmable Flash memory cards capable of storing and retrieving large
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MB98A8601/8602-17
256K/512K-BYTE
MB98A8601
MB98A8602
68-pin
16-bit
0000H
Gb234
MB98A8601-17
MB98A8602-17
4C40H
PCMCIA Flash Memory Card 512K
a1a17
20H-1T
Fujitsu MBM28F010
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information applikation
Abstract: A109D information applikation mikroelektronik B303D Mikroelektronik Information Applikation B222D B260D "halbleiterwerk frankfurt" "Mikroelektronik" Heft mikroelektronik heft
Text: InnJDlkîn 1C = I Information Applikation Monolitisch integrierte IS für die INDUSTRIE ELEKTRONIK KATALOG If SONDER-1 Teil 1 |1 HEFT 1 J • ft • • ■ ■ 4 ^ " ■ W ' r; '* r _ ’ rd m D ß = ^ s e l e l - c t 3 n o r i i k Information Applikation
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Untitled
Abstract: No abstract text available
Text: mH Y II II VI A I HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 2,097,152
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HY57V16401
304x4bits,
66MHz
80MHz
100MHz
1SD01-00-MAY95
400mil
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1A11BS
Abstract: No abstract text available
Text: mV Y II II 11A I li II li fl • HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4brts, and fabricated w ith the Hyundai CM O S process. This dual bank circuit consists of two m emories, each 2,097,152
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HY57V16401
304x4brts,
50MHz
66MHz
80MHz
100MHz
1SD01-00-MAY95
1A11BS
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