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    V10N50BE

    Abstract: AN7254 AN7260 RFV10N50BE fet 500v 10A
    Text: RFV10N50BE S E M I C O N D U C T O R 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs August 1995 Features Package • 10A, 500V JEDEC STYLE 5 LEAD TO-247 • rDS ON = 0.480Ω • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds


    Original     		RFV10N50BE O-247 RFV10N50BE 1-800-4-HARRIS V10N50BE AN7254 AN7260 fet 500v 10A PDF

    TA9881

    Abstract: z738 B 1403 N circuit Diagram RFV10N50BE
    Text: m HARRIS S E M I C O N D U C T O R RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power M O SFETs December 1992 Package Features 5 LEAD TO-247 STYLE • 10A . 500V T OP VIEW • rDS on = 0.48Q • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds


    OCR Scan     		RFV10N50BE O-247 RFV10N50BE AN7254 AN7260 TA9881 z738 B 1403 N circuit Diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs August 1995 Features Package • 10A,500V • JEDEC STYLE 5 LEAD TO-247 rDS ON) = 0 .4 8 0 Q • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds • Electrostatic Discharge Protected


    OCR Scan     		RFV10N50BE O-247 RFV10N50BE PDF