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    Untitled

    Abstract: No abstract text available
    Text: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF FGH50N3 FGH50N3 150oC.

    FFH30US30S

    Abstract: FGH50N3 LD26 TA49485
    Text: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF FGH50N3 FGH50N3 150oC. FFH30US30S LD26 TA49485