1n120cnd
Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334 1N120CN
Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
1n120cnd
HGT1S1N120CNDS9A
RHRD4120
TB334
1N120CN
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HGT1S2N120CNDS
Abstract: HGTP2N120CND HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN
Text: HGTP2N120CND, HGT1S2N120CNDS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120CND,
HGT1S2N120CNDS
HGTP2N120CND
HGT1S2N120CNDS
TA49313.
TA49056
RHRD4120)
HGT1S2N120CNDS9A
RHRD4120
TB334
2N120CN
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HR4120
Abstract: RHRD4120 RHRD4120S RHRD4120S9A HR4120 INTERSIL
Text: RHRD4120, RHRD4120S Data Sheet January 2000 File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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RHRD4120,
RHRD4120S
RHRD4120
RHRD4120S
HR4120
RHRD4120S9A
HR4120 INTERSIL
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1N120CND
Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
1N120CND
HGT1S1N120CNDS9A
RHRD4120
TB334
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2N120CN
Abstract: 12V 200A Relay HGT1S2N120CNDS HGT1S2N120CNDS9A HGTP2N120CND RHRD4120 TB334 2N120CND
Text: HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120CND,
HGT1S2N120CNDS
HGTP2N120CND
HGT1S2N120CNDS
TA49313.
TA49056
RHRD4120)
2N120CN
12V 200A Relay
HGT1S2N120CNDS9A
RHRD4120
TB334
2N120CND
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HR4120
Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Text: RHRD4120, RHRD4120S Data Sheet January 2002 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRD4120,
RHRD4120S
RHRD4120
RHRD4120S
175oC
HR4120
RHRD4120S9A
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2N120BND
Abstract: 12V 200A Relay MOSFET 1200v 3a HGT1S2N120BNDS HGT1S2N120BNDS9A HGTP2N120BND TB334
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
2N120BND
12V 200A Relay
MOSFET 1200v 3a
HGT1S2N120BNDS9A
TB334
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HR4120
Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Text: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes March 1997 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHRD4120,
RHRD4120S
O-251
O-252
RHRD4120
TA49056)
1-800-4-HARRIS
HR4120
RHRD4120S
RHRD4120S9A
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HGTP2N120CND
Abstract: 12V 200A Relay HGT1S2N120CNDS HGT1S2N120CNDS9A RHRD4120 TB334
Text: HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120CND,
HGT1S2N120CNDS
HGTP2N120CND
HGT1S2N120CNDS
TA49313.
TA49056
RHRD4120)
12V 200A Relay
HGT1S2N120CNDS9A
RHRD4120
TB334
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2N120BND
Abstract: 12V 200A Relay TC.. 12A MOSFET Drivers HGT1S2N120BNDS HGT1S2N120BNDS9A HGTP2N120BND TB334 ZENER DIODE 12V
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
2N120BND
12V 200A Relay
TC.. 12A MOSFET Drivers
HGT1S2N120BNDS9A
TB334
ZENER DIODE 12V
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1N120CN
Abstract: 1N120CND GEM X 365 HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
1N120CN
1N120CND
GEM X 365
HGT1S1N120CNDS9A
RHRD4120
TB334
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HGT1S1N120BNDS
Abstract: HGT1S1N120BNDS9A HGTP1N120BND RHRD4120 TB334
Text: HGTP1N120BND, HGT1S1N120BNDS Data Sheet December 2001 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
HGT1S1N120BNDS9A
RHRD4120
TB334
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HGT1S2N120BNDS
Abstract: HGT1S2N120BNDS9A HGTP2N120BND TB334
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet December 2001 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
HGT1S2N120BNDS9A
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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1N120BND
Abstract: TB334 HGT1S1N120BNDS HGT1S1N120BNDS9A HGTP1N120BND RHRD4120
Text: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
1N120BND
TB334
HGT1S1N120BNDS9A
RHRD4120
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Untitled
Abstract: No abstract text available
Text: RHRD4120, RHRD4120S S em iconductor March 1997 File Number 3626.3 4A, 1200V Hyperfast Diodes Features RHRD4120 and RHRD4120S TA49056 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes and are silicon
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RHRD4120,
RHRD4120S
RHRD4120
TA49056)
and-------------400
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Untitled
Abstract: No abstract text available
Text: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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OCR Scan
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
O-220AB
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1N120CND
Abstract: No abstract text available
Text: L I* n n i C y a £ £ & HGTP1N120CND, HGT1S1N120CNDS 6.2A, 1200V, NPT Series N-Channel IGBT Wjth Anti-Parallel Hyperfast Diode ADVANCE INFORMATION November 1998 Features Description • 6.2A, 1200V, T C = 2 5 °C The HGTP1N120CND and the HGT1S1N120CNDS are NonPunch Through NPT IGBT designs. They are new members of
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HGTP1N120CND,
HGT1S1N120CNDS
TB334,
HGTP1N120CND
HGT1S1N120CNDS
1-800-4-HARRIS
1N120CND
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Untitled
Abstract: No abstract text available
Text: HGTP2N120CND, HGT1S2N120CNDS Semiconductor D ata S h eet M arch 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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OCR Scan
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HGTP2N120CND,
HGT1S2N120CNDS
HGTP2N120CND
HGT1S2N120CNDS
TA49313.
TA49056
RHRD4120)
O-263AB
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Untitled
Abstract: No abstract text available
Text: HGTP1N120CND, HGT1S1N120CNDS Semiconductor February 1999 Data Sheet 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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OCR Scan
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
O-263AB
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Untitled
Abstract: No abstract text available
Text: HGTP2N120BND, HGT1S2N120BNDS Semiconductor D ata S h eet A p ril 1999 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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OCR Scan
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
O-263AB
O-263AB
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hr 4120
Abstract: 4-120S 4120S
Text: RHRD4120, RHRD4120S H A R R IS S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1 9 9 5 Package Features JE D E C S T Y LE TO-251 • Hyperfast with Soft R ecovery.<60ns • Operating T em p eratu
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RHRD4120,
RHRD4120S
O-251
RHRD4120
TA49056)
hr 4120
4-120S
4120S
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2N120CND
Abstract: transistor HJ 388 igbt spice model
Text: HGTP2N120CND, HGT1S2N120CNDS Semiconductor Data Sheet March 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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OCR Scan
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HGTP2N120CND,
HGT1S2N120CNDS
HGTP2N120CND
TA49313.
TA49056
RHRD4120)
O-263AB
2N120CND
transistor HJ 388
igbt spice model
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hr4120
Abstract: Hyperfast Diode 1200V RHRD4120 RHRD4120S RHRD4120S9A 1475C
Text: interrii RHRD4120, RHRD4120S J a n u a ry . Data Sheet m i File Num ber 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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RHRD4120,
RHRD4120S
RHRD4120
RHRD4120S
TA49056.
00A/jls
hr4120
Hyperfast Diode 1200V
RHRD4120S9A
1475C
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