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    G20N120E2

    Abstract: AN7254 AN7260 HGTG20N120E2 LD26 HGTG
    Text: HGTG20N120E2 S E M I C O N D U C T O R 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL


    Original
    HGTG20N120E2 O-247 780ns HGTG20N120E2 150oC. G20N120E2 AN7254 AN7260 LD26 HGTG PDF

    G20N120E2

    Abstract: AN7254 AN7260 HGTG20N120E2 LD26
    Text: HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss


    Original
    HGTG20N120E2 O-247 780ns HGTG20N120E2 150oC. G20N120E2 AN7254 AN7260 LD26 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bûE D • 43D2271 GÜSGS1S n i HHAS HGTG20N120E2 34A, 1200V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP VIP N • 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns t COLLECTOR BOTTOM SIDE


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    43D2271 HGTG20N120E2 O-247 780ns HGTG20N120E2 PDF

    TA49009

    Abstract: No abstract text available
    Text: HGTG20N120E2 34A, 1200V N-Channel IGBT December 1993 Package Features • JEDEC STYLE TO-247 TOP VIEW 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance i COLLECTOR • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switch­


    OCR Scan
    HGTG20N120E2 O-247 780ns HGTG20N120E2 TA49009 PDF

    20N120E2

    Abstract: No abstract text available
    Text: S m a r r ì H G T G 2 0 N 120E2 34A, 1200V N-Channel IGBT A pril 1995 Package Features JE D E C S TYLE TO -247 • 3 4 A ,1 2 0 0 V • L atch F ree O p era tio n • Typ ica l Fall T im e - 7 80 n s • H igh In p u t Im p e d a n c e • Lo w C o n d u c tio n Loss


    OCR Scan
    120E2 20N120E2 PDF