2E12
Abstract: FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1 FSF150R3
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF150D,
FSF150R
2E12
FSF150D
FSF150D1
FSF150D3
FSF150R
FSF150R1
FSF150R3
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fsf150
Abstract: MIL-S-19500 2E12 FSF150D FSF150R
Text: S E M I C O N D U C T O R FSF150D, FSF150R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 25A Note 1 , 100V, rDS(ON) = 0.070Ω • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSF150D,
FSF150R
100kRAD
36MeV/mg/cm2
O-254AA
1-800-4-HARRIS
fsf150
MIL-S-19500
2E12
FSF150D
FSF150R
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MIL-S-19500
Abstract: FSF150R3 2E12 FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF150D,
FSF150R
MIL-S-19500
FSF150R3
2E12
FSF150D
FSF150D1
FSF150D3
FSF150R
FSF150R1
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Rad Hard in Fairchild for MOSFET
Abstract: 2E12 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3 SMD TRANSISTOR br-37
Text: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYA150D,
FSYA150R
Rad Hard in Fairchild for MOSFET
2E12
FSYA150D
FSYA150D1
FSYA150D3
FSYA150R
FSYA150R1
FSYA150R3
SMD TRANSISTOR br-37
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smd diode 39a
Abstract: smd 39a FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3 2E12 FSYA150D
Text: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYA150D,
FSYA150R
smd diode 39a
smd 39a
FSYA150D1
FSYA150D3
FSYA150R
FSYA150R1
FSYA150R3
2E12
FSYA150D
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSF150D,
FSF150R
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSF150R4 JANSR2N7405 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 70 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 70 m, d rd, Features Description • 25A (Note), 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Intersil Corporation has
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JANSR2N7405
FSF150R4
2E12
FSF150R4
JANSR2N7405
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSF150R4 JANSR2N7405
Text: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7405
FSF150R4
2E12
FSF150R4
JANSR2N7405
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Untitled
Abstract: No abstract text available
Text: JANSR2N7405 S E M I C O N D U C T O R September 1997 Formerly Available As FSF150R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Harris Semiconductor
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JANSR2N7405
1-800-4-HARRIS
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2E12
Abstract: FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
Text: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYA150D,
FSYA150R
2E12
FSYA150D
FSYA150D1
FSYA150D3
FSYA150R
FSYA150R1
FSYA150R3
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Untitled
Abstract: No abstract text available
Text: JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 25A Note , 100V, rDS(ON) = 0.070Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7405
FSF150R4
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Untitled
Abstract: No abstract text available
Text: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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PDF
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FSYA150D,
FSYA150R
1-800-4-HARRIS
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1 L 0380 R
Abstract: No abstract text available
Text: FSYA150D, FSYA150R Semiconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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PDF
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FSYA150D,
FSYA150R
1-800-4-HARRIS
1 L 0380 R
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Untitled
Abstract: No abstract text available
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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PDF
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FSF150D,
FSF150R
36MeV/mg/cm2
MIL-S-19500
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TA17656
Abstract: No abstract text available
Text: JANSR2N7405 & HAfSSS Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A Note , 100V, rDS(ON) = 0.070Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSF150R4
JANSR2N7405
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
TA17656
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R FSF150D, FSF150R " • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 2 5 A N ote 1 , 100V, rDS(ON) = 0.070Q. TO-254AA • Total Dose - M eets Pre-Rad Specifications to 100kRAD(Si)
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OCR Scan
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FSF150D,
FSF150R
O-254AA
100kRAD
1-800-4-HARRIS
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TA17656
Abstract: No abstract text available
Text: & MAH«» FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description Features rp s O N = 0-0700 • Total Dose - Meets Pre-RAO Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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OCR Scan
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FSF150D,
FSF150R
36MeWmg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
TA17656
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