smd resistor 4701
Abstract: thick film SMD chip resistor array 280-402 jis b 0623 4701 smd resistor sony label sony lot number on the label CN28JT SS-00254 SS-00254-8
Text: Thick Film Chip Resistor Arrays Thick Film Chip Resistor Networks TA-I Lead-Free for CN28 Series No TCN-280S004F page 1/10 1. Scope : This specification applies for the CN28 series of thick film chip resistor arrays made by TA-I. 2. Construction , Dimensions , Schematic :
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TCN-280S004F
TCN-280S004E
smd resistor 4701
thick film SMD chip resistor array
280-402
jis b 0623
4701 smd resistor
sony label
sony lot number on the label
CN28JT
SS-00254
SS-00254-8
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Untitled
Abstract: No abstract text available
Text: DMP3010LK3 Green Product Summary V BR DSS -30V Features and Benefits RDS(on) max ID TA = +25°C • Low Input Capacitance Low On-Resistance 8mΩ @ VGS = -10V -17A Fast Switching Speed 10.2mΩ @ VGS = -4.5V -14.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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DMP3010LK3
AEC-Q101
DS35716
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Untitled
Abstract: No abstract text available
Text: DMP3010LPSQ P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V ID TA = +25°C -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior
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DMP3010LPSQ
DS36683
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Untitled
Abstract: No abstract text available
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V ID TA = +25°C -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior
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DMP3010LPS
DS32239
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P3010LS
Abstract: PowerDI5060-8L PowerDI5060-8
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) ID TA = 25°C (Note 5) 7.5mΩ @ VGS = -10V -36A 10mΩ @ VGS = -4.5V -31A • • • • • • • • • • 30V Description and Applications This new generation 30V P-Channel Enhancement Mode MOSFET
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DMP3010LPS
AEC-Q101
DS32239
P3010LS
PowerDI5060-8L
PowerDI5060-8
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P3010LS
Abstract: No abstract text available
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V • • • • • • • • • • ID TA = 25°C (Note 5) -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET
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DMP3010LPS
AEC-Q101
DS32239
P3010LS
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PowerDI5060-8L
Abstract: P3010LS DMP3010LPS DMP3010LPS-13
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) ID TA = 25°C (Note 5) 7.5mΩ @ VGS = -10V -36A 10mΩ @ VGS = -4.5V -31A • • • • • • • • • • -30V Description and Applications This new generation 30V P-Channel Enhancement Mode MOSFET
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DMP3010LPS
DS32239
PowerDI5060-8L
P3010LS
DMP3010LPS
DMP3010LPS-13
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Untitled
Abstract: No abstract text available
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) ID TA = 25°C (Note 5) 7.5mΩ @ VGS = -10V -36A 10mΩ @ VGS = -4.5V -31A • • • • • • • • • • -30V Description and Applications This new generation 30V P-Channel Enhancement Mode MOSFET
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DMP3010LPS
DS32239
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PowerDI5060-8
Abstract: P3010LS
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V • • • • • • • • • • ID TA = 25°C (Note 5) -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET
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DMP3010LPS
AEC-Q101
DS32239
PowerDI5060-8
P3010LS
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Untitled
Abstract: No abstract text available
Text: DMP3010LK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) max 8m @ VGS = -10V • • • • • ID TA = 25°C -17A -30V 10.2m @ VGS = -4.5V -14.5A Mechanical Data Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMP3010LK3
AEC-Q101
DS35716
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P3010L
Abstract: DMP3010LK3-13
Text: DMP3010LK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) max • • • • • ID TA = 25°C 8mΩ @ VGS = -10V -17A 10.2mΩ @ VGS = -4.5V -14.5A -30V Mechanical Data Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMP3010LK3
AEC-Q101
DS35716
P3010L
DMP3010LK3-13
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hitachi lcd lm 234
Abstract: 40w fluorescent lamp DENSITRON LCD GRAPHIC DISPLAY MODULE lc7940 densitron lcd module t6963c t6963c 240x128 240x128 T6963C lcd 240x128 LCD-IV 7942 lcd
Text: LIQUID CRYSTAL DISPLAY MODULE Product Specification DENSITRON STANDARD LCD MODULE PRODUCT NUMBER LM/TS 3234 – LM/TS 4234 – LM/TS 6234 DEFINITION Display 240*128 dots Date 19/04/04 INTERNAL APPROVALS Quality Mgr Date: Product Mgr Date: Project Leader Date:
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T6963C lc7942
Abstract: densitron lcd module t6963c lc7940 LC7942 Densitron hitachi PLC 240x128 T6963C T6963C 240x128 lc7940 lcd 240x128 LCD-IV
Text: LIQUID CRYSTAL DISPLAY MODULE Product Specification DENSITRON STANDARD LCD MODULE PRODUCT NUMBER LMR/TSR 3234 – LMR/TSR 4234 – LMR/TSR 6234 DEFINITION Display 240*128 dots Date 19/04/04 INTERNAL APPROVALS Quality Mgr Date: Product Mgr Date: Project Leader
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max3721
Abstract: MCM6264WP70 MCM6264NJ70 MCM6264 62L64 072O MCM62L64-70 MCM6264J70
Text: M O TO RO LA SC M E M O R Y /A S IC MlaE D b3b?2S l D O ö G ö 'iS MOTOROLA M O TE S Ì > 5 - \R , Order this data sheet by MCM6264-70/D I SEMICONDUCTOR TECHNICAL DATA c8 IC x 8 Bit Fast S ta tic [RAM M CM 6234-70 MCM 62S-64-70 The MCM6264-70 is a 65,536 bit static random access memory organized as 8192 words
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MCM6264-70/D
MCM6264-70
MC62L64-70
max3721
MCM6264WP70
MCM6264NJ70
MCM6264
62L64
072O
MCM62L64-70
MCM6264J70
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Untitled
Abstract: No abstract text available
Text: in te fs il RFD4N06L, RFD4N06LSM D a ta S h e e t J u n e 1999 • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in applications such as programmable controllers, automotive
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RFD4N06L,
RFD4N06LSM
RFD4N06LSM
TA09520.
AN7254
AN7260.
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betatherm 145
Abstract: Betatherm 30K6A1 8243
Text: B F,TA THERM DATA SHEET BETATHERM PART NO.:30K6A1 F.E.C. NO. :151-592 DESCRIPTIONNTC THERMISTOR WITH LEAD TYPE 32 AWG ALLOY MECHANICAL SPECIFICATION GREEN STYCAST 2850FT. C u rv e 6 R 25°C 3 00 00 T em p 'C -5 0 -45 -40 -35 -30 -25 -20 -15 -10 -5 5 10
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30K6A1
betatherm 145
Betatherm
8243
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5787wa
Abstract: BENDIX subminiature 5787 Bendix tubes gas filled voltage regulator EZ Anode 105 2N565 UL1111 5787 subminiature tubes
Text: File C a ta lo g: Special Purpose Electron Tubes Section: G a s and Special Tubes E 7 Q 7 3 / 0 / 1A# A V w ^ \ T y p e T D -6 3 RELIABLE SUB-MINIATURE VOLTAGE REGULATOR DESCRIPTION This tube is a g a s filled, cold cathode, subminiature v o lta ge regulator, Type 5 7 8 7 W A . The construction of
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TD-63
140Vdcmin.
135Vdcmax.
2N565
5787wa
BENDIX
subminiature 5787
Bendix tubes
gas filled voltage regulator
EZ Anode 105
UL1111
5787
subminiature tubes
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rs232 isa 16C450 schematic
Abstract: modem system block diagram MD1724 MD-1214 DBDA dial-up schematic modem board schema rs 232 CL-MD2614 ISA S20 temperature transmitter CL-MD1414
Text: CL-MD1414EXX rCIRRUS LOGIC D a ta Book FEATURES • Data m odem m o d es - C C IT T : V.32 bis, V.32, V.22 bis, and V.22 - Bell®: 212A and 103 - Speeds: 14400, 12000, 9600, 7200, 4800, 2400, 1200, and 300 bps - Industry-standard ‘AT’ command set ■ F a x m odem se n d an d receiv e m o d es
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CL-MD1414EXX
EIA/TIA-578
42/MNP®
rs232 isa 16C450 schematic
modem system block diagram
MD1724
MD-1214
DBDA
dial-up schematic modem board
schema rs 232
CL-MD2614
ISA S20 temperature transmitter
CL-MD1414
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Untitled
Abstract: No abstract text available
Text: MOTOROLA CMOS SSI DUAL 2-WIDE, 2-INPUT EXPANDABLE AND-OR-INVERT GATE LO W -PO W ER C O M P L E M E N T A R Y M O S l T h e M C 1 4 5 0 6 U B is an e x p a n d a b le A N D -O R -IN V E R T g a te w ith inhibit and 3 -s ta te o u tp u t. T h e e x p a n d o p tion a llo w s
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MC14506UB
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I2864
Abstract: DLDP02 z04 e3 PV 1153 C55D
Text: Data Sheet October 1995 SXT6234 E-Rate Multiplexer Features T he S X T 6234 E -R ate M ultiplexer is a single-chip solution for m ultiplexing four tributary ch annels into a single h igh speed data stream and for dem ultiplexing a high speed data stream back to four tributary channels.
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SXT6234
T6234
DS-SXT6234-0296-1K
I2864
DLDP02
z04 e3
PV 1153
C55D
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HN62344BP
Abstract: HN62344
Text: blE D • 44^203 HN62344B Series 0D22323 412 ■ H I T 2 — - HITACHI/ LOG IC/ARRAYS/MEM 524288-word x 8-bit CMOS Mask Programmable Read Only Memory T he H N 62344B is a 4 -M b it CM OS m askprogrammable ROM organized as 524288 words by 8 bits. Realizing low power consumption, this
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0D22323
HN62344B
524288-word
-13-IS-
L06IC/ARRAYS/MEM
HN62344BP
HN62344
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Untitled
Abstract: No abstract text available
Text: A K N 62344B Series 524288-Word x 8-Bit CMOS Mask Programmable ROM PIN CONFIGURATION A K N62344B is a 4-Mbit C M O S mask-programmable ROM organized as 524288 word x 1 32 A 1 6 ^ 2 31 A 15 d 3 30 □ A 17 A 1 2 ^ 4 n c Q 8-bits. Realizing low power consumption, this
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62344B
524288-Word
N62344B
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Untitled
Abstract: No abstract text available
Text: HN62344B Series 4M 512K x 8-bit Mask ROM • DESCRIPTION The H itachi H N 62344B is a 4-M e g a b it CMOS M ask Programmable Read Only Memory organized as 524,288 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and
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HN62344B
62344B
32-pin
32-lead
HN62344B)
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HN62344BP
Abstract: No abstract text available
Text: HN62344B Series Preliminary 4M 512K x 8-bit Mask ROM • DESCRIPTION The H ita chi H N 62344B is a 4 -M e g a b it CM O S M ask Programmable Read Only Memory organized as 524,288 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and
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HN62344B
62344B
32-pin
32-lead
DP-32)
HN62344B)
HN62344BP
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