PowerDI5060-8L
Abstract: P3010LS DMP3010LPS DMP3010LPS-13
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) ID TA = 25°C (Note 5) 7.5mΩ @ VGS = -10V -36A 10mΩ @ VGS = -4.5V -31A • • • • • • • • • • -30V Description and Applications This new generation 30V P-Channel Enhancement Mode MOSFET
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PDF
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DMP3010LPS
DS32239
PowerDI5060-8L
P3010LS
DMP3010LPS
DMP3010LPS-13
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS USE D3ZxxBF Series PD3Z284C2V4 - PD3Z284C39 0.5W SURFACE MOUNT ZENER DIODE PowerDI323 Features Mechanical Data • Planar Die Construction Ultra-Small Surface Mount Package Lead Free By Design, RoHS Compliant Note 1
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PD3Z284C2V4
PD3Z284C39
PowerDI323
AEC-Q101
PowerDI323
J-STD-020D
MIL-STD-202,
PD3Z284C2V4
DS32239
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P3010LS
Abstract: PowerDI5060-8L PowerDI5060-8
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) ID TA = 25°C (Note 5) 7.5mΩ @ VGS = -10V -36A 10mΩ @ VGS = -4.5V -31A • • • • • • • • • • 30V Description and Applications This new generation 30V P-Channel Enhancement Mode MOSFET
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Original
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PDF
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DMP3010LPS
AEC-Q101
DS32239
P3010LS
PowerDI5060-8L
PowerDI5060-8
|
Untitled
Abstract: No abstract text available
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V ID TA = +25°C -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior
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DMP3010LPS
DS32239
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tc 368 94v-0 board
Abstract: No abstract text available
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features • Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS ON – Minimizes On State Losses Low Input Capacitance Fast Switching Speed
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Original
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PDF
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DMP3010LPS
DS32239
tc 368 94v-0 board
|
Untitled
Abstract: No abstract text available
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) ID TA = 25°C (Note 5) 7.5mΩ @ VGS = -10V -36A 10mΩ @ VGS = -4.5V -31A • • • • • • • • • • -30V Description and Applications This new generation 30V P-Channel Enhancement Mode MOSFET
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Original
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PDF
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DMP3010LPS
DS32239
|
PowerDI5060-8
Abstract: P3010LS
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V • • • • • • • • • • ID TA = 25°C (Note 5) -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET
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Original
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PDF
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DMP3010LPS
AEC-Q101
DS32239
PowerDI5060-8
P3010LS
|
P3010LS
Abstract: No abstract text available
Text: DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V • • • • • • • • • • ID TA = 25°C (Note 5) -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET
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Original
|
PDF
|
DMP3010LPS
AEC-Q101
DS32239
P3010LS
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