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    T88 MARKING Search Results

    T88 MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    T88 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T88-A150XSMD

    Abstract: No abstract text available
    Text: Surge Arrester 3-Electrode-Arrester T88-A150XSMD Ordering code: B88069X9840T302 DC spark-over voltage 1 2) 4) 150 ± 20 V % < 450 < 400 V V < 550 < 500 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)


    Original     		PDF T88-A150XSMD B88069X9840T302 57845/VDE0845 T88-A150XSMD

    T88-A350XSMD

    Abstract: No abstract text available
    Text: Surge Arrester 3-Electrode-Arrester T88-A350XSMD Ordering code: B88069X8420T302 DC spark-over voltage 1 2) 4) 350 ± 20 V % < 750 < 600 V V < 900 < 800 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)


    Original     		PDF T88-A350XSMD B88069X8420T302 57845/VDE0845 T88-A350XSMD

    B88069X8330T302

    Abstract: T88-A90XSMD
    Text: Surge Arrester 3-Electrode-Arrester T88-A90XSMD Ordering code: B88069X8330T302 DC spark-over voltage 1 2) 4) 90 ± 20 V % < 400 < 300 V V < 550 < 450 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)


    Original     		PDF T88-A90XSMD B88069X8330T302 57845/VDE0845 B88069X8330T302 T88-A90XSMD

    T88-A230XSMD

    Abstract: No abstract text available
    Text: Surge Arrester 3-Electrode-Arrester T88-A230XSMD Ordering code: B88069X9920T302 DC spark-over voltage 1 2) 4) 230 ± 20 V % < 450 < 400 V V < 650 < 600 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)


    Original     		PDF T88-A230XSMD B88069X9920T302 57845/VDE0845 T88-A230XSMD

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    NE85633

    Abstract: NE02133 NE68033 Marking R32 marking R33 NE68533 NE97833 NE68133 R24 marking NE94433
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 33 +0.2 2.8 -0.3 2.9 ± 0.2 0.95 2 1.9 3 +0.10 0.4 -0.05 ALL LEADS 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 MARKING 1.1 to 1.4 0.8 0 to 0.1


    Original     		PDF NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 NE94433 NE97733 NE85633 NE02133 NE68033 Marking R32 marking R33 NE68533 NE97833 NE68133 R24 marking NE94433

    R47 marking

    Abstract: U73-U74 NE25118 NE85618 1817 transistor NE34018 NE68018 NE68118 R27 marking NE68618
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 18 2.1 ± 0.2 +0.10 0.3 -0.05 LEADS 2, 3, 4 1.25 ± 0.1 2.0 ± 0.2 3 2 0.65 1.3 0.60 1 4 +0.10 0.4 -0.05 MARKING 0.15 0.9 ± 0.1 0 to 0.1


    Original     		PDF NE25118 NE68618 NE68718 NE68018 NE68118 NE68518 NE68818 NE34018 NE76118 NE85618 R47 marking U73-U74 NE25118 NE85618 1817 transistor NE34018 NE68018 NE68118 R27 marking NE68618

    NE85630

    Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130


    Original     		PDF NE02130B NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE94430 NE85630 T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630

    UPA801T

    Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T


    Original     		PDF UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T

    C1A MARKING

    Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10


    Original     		PDF NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 UPC1675G UPC1676G C1A MARKING c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039

    2SC5193

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5193 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5193 2SC5193 2SC5193-T1 25ation,

    T88 NEC

    Abstract: 2SC5191-T1B 2sc5191
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5191 2SC5191 2SC5191-T1B T88 NEC

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    pt 8726 transistor

    Abstract: 2SC5193 2SC5193-T1 2SC5193-T2 T88 NEC
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING Units: mm • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5193 2SC5193-T1 2SC5193-T2 pt 8726 transistor 2SC5193 2SC5193-T1 2SC5193-T2 T88 NEC

    IC 751 1124

    Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 QUANTITY PACKING STYLE


    Original     		PDF 2SC5194 2SC5194-T1 2SC5194-T2 IC 751 1124 2SC5194 2SC5194-T1 2SC5194-T2

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    2SC5191

    Abstract: nec 2035 744 2SC5191-T1 2SC5191-T2 nec 2412 transistor 2203
    Text: DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Unit: mm • Low Voltage Operation, Low Phase Distortion 2.8±0.2 0.4 +0.1 −0.05 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz


    Original     		PDF 2SC5191 SC-59 2SC5191-T1 2SC5191-T2 2SC5191 nec 2035 744 2SC5191-T1 2SC5191-T2 nec 2412 transistor 2203

    713-102

    Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC5192

    Abstract: 2SC5192-T1 2SC5192-T2 TD-2485
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    diode t88

    Abstract: zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 1n5000 5261B 5230b 1N4000 1N5000 SERIES
    Text: 7 0 2 0 ^ DOOfifi^O Olô •RHil 1N5000 SERIES ZEN ER DIODE GLASS SEALED APPLICATION: FEATURES: - JE D E C IN5000 Series - Silicon planar construction ■DO-35 Package - Available in 8 mm plastic carrier tape - Voltage range: 2.4 to 91V Voltage Regulation


    OCR Scan     		PDF 1N5000 IN5000 DO-35 DO-35 5261B 1N5262B 5262B 1N5263B 5263B 1N5264B diode t88 zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 5261B 5230b 1N4000 1N5000 SERIES

    diode t88

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAV70WT1/D SEMICONDUCTOR TECHNICAL DATA BAV70WT1 Dual Switching Diode M o to ro la P re ferre d D e vic e ANODE • N— ° 1 CATHODE -N - 2 -O MAXIMUM RATINGS T a = 2 5 ° C Symbol Max Unit Reverse Voltage Rating Vr 70


    OCR Scan     		PDF BAV70WT1/D BAV70WT1 SC-70/80T-323 bav70W diode t88

    NEC IC D 553 C

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1 .5 dB TYP. @ V c e = 3 V , Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5193 SC-70 2SC5193-T1 2SC5193-T2 NEC IC D 553 C