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    T5N 400 Search Results

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    T5N 400 Price and Stock

    ABB Low Voltage Products and Systems T5N400DW

    T5N-D 400 Mcs-Ul/Csa Im=5000 3P F F |Abb T5N400DW
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    Newark T5N400DW Bulk 1
    • 1 $1499.81
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    RS T5N400DW Bulk 1
    • 1 $2588.03
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    ABB Low Voltage Products and Systems T5N400TW

    Circuit Breaker, 3 Pole, 400A; Product Range:Tmax T5 Series; Current Rating:400A; No. Of Poles:3 Pole; Voltage Rating Vdc:600Vdc; Voltage Rating Vac:600Vac; Circuit Breaker Mounting:Panel |Abb T5N400TW
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    Newark T5N400TW Bulk 1
    • 1 $2743.76
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    Neutron USA T5N400TW
    • 1 $4642.48
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    ABB Low Voltage Products and Systems T5N400BW

    Circuit Breaker, 3 Pole, 400A; Product Range:Tmax T5 Series; Current Rating:400A; No. Of Poles:3 Pole; Voltage Rating Vdc:-; Voltage Rating Vac:600Vac; Circuit Breaker Mounting:Panel |Abb T5N400BW
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    Newark T5N400BW Bulk 1
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    ABB Low Voltage Products and Systems T5N400E5W

    T5N400 Mcp-Ul/Csa Pr221Ds-I In=400 3P Ff |Abb T5N400E5W
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    Newark T5N400E5W Bulk 1
    • 1 $1748.97
    • 10 $1616.14
    • 100 $1560.79
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    RS T5N400E5W Bulk 1 5 Weeks 1
    • 1 $3266.26
    • 10 $3102.95
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    ABB Low Voltage Products and Systems T5N400CW-2

    T5N 400 Ul/Csa Pr222Ds/P-Lsi 400 2P F F |Abb T5N400CW-2
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    Newark T5N400CW-2 Bulk 1
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    T5N 400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		PDF L9D112G80BG4 LDS-L9D112G80BG4-A

    posted CAS jedec 1999

    Abstract: No abstract text available
    Text: PRELIMINARY 64Mb: x4, x8 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V


    Original     		PDF 64Mx4x8DDR posted CAS jedec 1999

    Diodes Incorporated 17-33

    Abstract: T6N 700 DQ66 L9D12
    Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		PDF L9D112G80BG4 LDS-L9D112G80BG4-C Diodes Incorporated 17-33 T6N 700 DQ66 L9D12

    Untitled

    Abstract: No abstract text available
    Text: PreLIMINARY Information L9D120G64BG4 2.0 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		PDF L9D120G64BG4 LDS-L9D120G64BG4-A

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks MT46V8M16 – 2 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400)


    Original     		PDF 128Mb: MT46V32M4 MT46V16M8 MT46V8M16 09005aef816fd013/Source: 09005aef816ce127 128MBDDRx4x8x16D

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks MT46V8M16 – 2 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400)


    Original     		PDF 128Mb: MT46V32M4 MT46V16M8 MT46V8M16 09005aef816fd013/Source: 09005aef816ce127 128MBDDRx4x8x16D

    Diodes Incorporated 17-33

    Abstract: CKE 2009 cke02 RING TERM M6 2,5mm2
    Text: PreLIMINARY Information L9D125G80BG4 2.5 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		PDF L9D125G80BG4 LDS-L9D125G80BG4-C Diodes Incorporated 17-33 CKE 2009 cke02 RING TERM M6 2,5mm2

    Untitled

    Abstract: No abstract text available
    Text: PreLIMINARY Information L9D110G64BG4 1.0 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		PDF L9D110G64BG4 LDS-L9D110G80BG4-A

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron MT49H16M18C

    RLDRAM mt49h

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 288Mb RLDRAM mt49h MT49H16M18C

    smd transistor marking HT1

    Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron smd transistor marking HT1 MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 - 16 Meg x 4 x 4 banks MT46V32M8 - 8 Meg x 8 x 4 banks MT46V16M16 - 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


    Original     		PDF 256Mb: 256Mx4x8x16DDR

    57256

    Abstract: DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4
    Text: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets/


    Original     		PDF 256Mb: MT46V64M4 MT46V32M8 MT46V16M16 256Mx4x8x16DDR 57256 DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4

    BA 5053 circuit diagram

    Abstract: BA 5053
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


    Original     		PDF 128Mb: 128Mx4x8x16DDR BA 5053 circuit diagram BA 5053

    DDR266B

    Abstract: MT46V128M8 MT46V256M4 MT46V64M16 MT46V64M16TG-75
    Text: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V256M4 – 64 MEG X 4 X 4 BANKS MT46V128M8 – 32 MEG X 8 X 4 BANKS MT46V64M16 – 16 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


    Original     		PDF MT46V256M4 MT46V128M8 MT46V64M16 66-pin 09005aef8076894f 1gbDDRx4x8x16 DDR266B MT46V128M8 MT46V256M4 MT46V64M16 MT46V64M16TG-75

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks MT46V8M16 - 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


    Original     		PDF 128Mb: 128Mx4x8x16DDR

    Untitled

    Abstract: No abstract text available
    Text: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 banks MT46V128M8 – 32 Meg x 8 x 4 banks MT46V64M16 – 16 Meg x 16 x 4 banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = VDDQ = +2.6V ±0.1V (DDR400)


    Original     		PDF MT46V256M4 MT46V128M8 MT46V64M16 DDR400) 09005aef80a2f898/Source: 09005aef80a2f8ae 1gbDDRx4x8x16

    MT46V64M16P-6TA

    Abstract: 1gbDDRx4x8x16
    Text: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 Banks MT46V128M8 – 32 Meg x 8 x 4 Banks MT46V64M16 – 16 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)


    Original     		PDF MT46V256M4 MT46V128M8 MT46V64M16 DDR400) 09005aef80a2f898/Source: 09005aef82a95a3a x4x8x16 MT46V64M16P-6TA 1gbDDRx4x8x16

    MT46V64M16P-6TA

    Abstract: 256M4 DDR266B DDR333B DDR400 DDR400B MT46V128M8 MT46V256M4 MT46V64M16 PC3200
    Text: 1Gb: x4, x8, x16 DDR SDRAM Features DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 Banks MT46V128M8 – 32 Meg x 8 x 4 Banks MT46V64M16 – 16 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V DDR400


    Original     		PDF MT46V256M4 MT46V128M8 MT46V64M16 DDR400) 09005aef80a2f898/Source: 09005aef82a95a3a x4x8x16 MT46V64M16P-6TA 256M4 DDR266B DDR333B DDR400 DDR400B MT46V128M8 MT46V256M4 MT46V64M16 PC3200

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    MT46V32M16TG-xx

    Abstract: No abstract text available
    Text: ADVANCE‡ 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


    Original     		PDF 512Mb: 512Mx4x8x16DDR MT46V32M16TG-xx

    T5N 400

    Abstract: 14PCT070TR4 14PCT070T4-RYGG 013100
    Text: LTR R EVISION - R ELEA SED A RSVD P ER ECR DATE APPD 0 8 -0 6 -9 8 1 1 1 0 9 9 -S A 0 3 1 1 -1 0 -9 9 CM .400 .100 .1 0 0 - 1 0.020 TYP -o o o -o o o o .100 FOOT PRINT MIX COLORS ALL LEDS SAME COLOR 14PCT070T4-RYGG 14PCT070TR4 "t- BRIG H TN ESS CODE T4, T5. T5N


    OCR Scan     		PDF 111099-SA03 14PCT070TR4 14PCT070T4-RYGG ANSI-Y14 14PCT070TX4 SDPC0314 8Z410 T5N 400 14PCT070TR4 14PCT070T4-RYGG 013100