Nippon capacitors
Abstract: MRF6S19120H
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S19120H
IS--95
MRF6S19120HR3
MRF6S19120HSR3
Nippon capacitors
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T491X106K035AT
Abstract: A114 A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19120HR3 MRF6S19120HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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Original
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PDF
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MRF6S19120H
MRF6S19120HR3
MRF6S19120HSR3
MRF6S19120HR3
T491X106K035AT
A114
A115
AN1955
C101
JESD22
MRF6S19120HSR3
Nippon capacitors
Nippon chemi
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MRF6S19120H
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 MRF6S19120HR3 MRF6S19120HSR3 Designed for N - CDMA base station applications with frequencies from 1930
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Original
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PDF
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MRF6S19120H
MRF6S19120HR3
MRF6S19120HSR3
MRF6S19120HR3
MRF6S19120H
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