Untitled
Abstract: No abstract text available
Text: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S19100H
37ficers,
MRF6S19100HR3
MRF6S19100HSR3
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A114
Abstract: A115 AN1955 JESD22 MRF6S19100HR3 MRF6S19100HSR3 T491C106K050AS
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S19100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF6S19100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HSR3
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PDF
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MRF6S19100H/D
MRF6S19100HR3
MRF6S19100HSR3
MRF6S19100HR3
A114
A115
AN1955
JESD22
MRF6S19100HSR3
T491C106K050AS
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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Original
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PDF
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MRF6S19100HR3
MRF6S19100HSR3
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