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    KEMET Corporation T491C105K050AS

    CAP TANT 1UF 10% 50V 2312
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    DigiKey T491C105K050AS Cut Tape
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    T491C105K050AS Digi-Reel 1
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    Bristol Electronics T491C105K050AS 7,768
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    T491C105K050AS 5,865 9
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    T491C105K050AS 500
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    Quest Components T491C105K050AS 4,692
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    T491C105K050AS 2,600
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    T491C105K050AS 2,184
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    T491C105K050AS 1,078
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    T491C105K050AS 1,008
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    T491C105K050AS 710
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    T491C105K050AS 691
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    T491C105K050AS 615
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    T491C105K050AS 400
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    T491C105K050AS 79
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    Component Electronics, Inc T491C105K050AS 496
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    Cornell Dubilier Electronics Inc T491C105K050AS-F

    CAP TANT 1UF 10% 50V 2312
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    DigiKey T491C105K050AS-F Bulk 500
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    KEMET Corporation T491C105K050AT

    Tantalum Capacitors - Solid SMD 50V 1.0uF 2312 10% ESR=5.5ohms
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    Mouser Electronics T491C105K050AT 42,145
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    TTI T491C105K050AT Reel 575,500 500
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    T491C105K050AT Cut Tape 650 25
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    KEMET Corporation T491C105K050AS7653

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    Bristol Electronics T491C105K050AS7653 1,884
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    Others T491C105K050AS

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    T491C105K050AS Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T491C105K050AS KEMET Tantalum Capacitors, Capacitors, CAP TANT 1UF 50V 10% 2413 Original PDF
    T491C105K050AS KEMET Solid Tantalum Chip Capacitors / T491 Series - Precision Molded Chip; Capacitance [nom]: 1uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Tantalum, Solid; Lead Style: Surface-Mount Chip; Lead Dimensions: 6032-28; Termination: Solder Coated (SnPb 90/10); Body Dimensions: 6.0mm x 3.2mm x 2.5mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500 Original PDF
    T491C105K050ASC7280 KEMET CAP 1UF 50V 10% TANT SMD-6032-28 TR-13-PL SN100% Original PDF
    T491C105K050AS-F Cornell Dubilier Tantalum Capacitors, Capacitors, CAP TANT 1UF 50V Original PDF

    T491C105K050AS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955

    3528

    Abstract: T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS
    Text: Go ahead, it’s your move . . . . Design a KEMET Tantalum Chip into your future KEMET is offering five Tantalum Chip Engineering Kits to meet your diverse design needs for the future. KEMET’s line of Engineering Kits for Tantalum Chips will include a T495 Low ESR Kit, an Extended Range T491 Kit, a Standard T491


    Original     		PDF T520V157M006AS T520D337M006AS T520X477M006AS T520D107M010AS T520D157M010AS T520X337M010AS F3217D 3528 T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS

    Untitled

    Abstract: No abstract text available
    Text: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H 37ficers, MRF6S19100HR3 MRF6S19100HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P21190HR6 MRF6P21190HR6

    3528

    Abstract: LED+white+SMD+3528
    Text: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications ♦ ♦ ♦ ♦ E Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC


    Original     		PDF QC300801/US0001 535BAAC 535BAAC. 3528 LED+white+SMD+3528

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100

    Untitled

    Abstract: No abstract text available
    Text: MRF6P21190HR6 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P21190HR6 MRF6P21190HR6

    MW6S010NR1

    Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    T491B225K020AS-F

    Abstract: T491B475K016AS T491D106K025AS-F T491X686K020AS-F 3216 capacitor 3528 6032 T491B105K035AS T491B106K010AS T491D226K025AS
    Text: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC


    Original     		PDF QC300801/US0001 535BAAC 535BAAC. T491C225K035AS-F T491C335K035AS-F T491C475K035AS-F T491D475K035AS-F T491D685K035AS-F T491D106K035AS-F 7343H T491B225K020AS-F T491B475K016AS T491D106K025AS-F T491X686K020AS-F 3216 capacitor 3528 6032 T491B105K035AS T491B106K010AS T491D226K025AS

    T491D107K010AS

    Abstract: T491B475K010AS 7343H T491B106K010AS chip capacitors 3528 cde T491B335K020AS
    Text: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC


    Original     		PDF 535BAAC. 7343H T491A104K050AS T491A154K050AS T491B154K050AS T491B224K050AS T491B334K050AS T491B474K050AS T491C474K050AS T491C684K050AS T491D107K010AS T491B475K010AS T491B106K010AS chip capacitors 3528 cde T491B335K020AS

    T491C106K025AS

    Abstract: T491B106K016AS 226 6032 tantalum cap chip capacitors 3528 capacitor 6032 T491C226K006AS T491D476K020AS T491C226K016AS T491A225K016AS T491D226K025AS
    Text: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC


    Original     		PDF QC300801/US0001 535BAAC 535BAAC. microprocessor-controlle491C155K035AS T491C225K035AS T491C335K035AS T491C475K035AS T491D475K035AS T491D685K035AS T491D106K035AS T491C106K025AS T491B106K016AS 226 6032 tantalum cap chip capacitors 3528 capacitor 6032 T491C226K006AS T491D476K020AS T491C226K016AS T491A225K016AS T491D226K025AS

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6P21190HR6 RFZ24
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P21190HR6 A114 A115 AN1955 C101 JESD22 MRF6P21190HR6 RFZ24

    A114

    Abstract: A115 AN1955 JESD22 MRF6S19100HR3 MRF6S19100HSR3 T491C106K050AS
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S19100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF6S19100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HSR3


    Original     		PDF MRF6S19100H/D MRF6S19100HR3 MRF6S19100HSR3 MRF6S19100HR3 A114 A115 AN1955 JESD22 MRF6S19100HSR3 T491C106K050AS

    100B102JP50X

    Abstract: 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6P18190H MRF6P18190HR6 100B102JP50X 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HSR3

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1


    Original     		PDF MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1 FERRITE BEAD 1000 OHM 0805 MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HSR3

    Untitled

    Abstract: No abstract text available
    Text: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC


    Original     		PDF QC300801/US0001 535BAAC 535BAAC.

    T491C105K0

    Abstract: MA675
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 MRF6S19100H T491C105K0 MA675

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3 MRF6S19100H

    CRCW12061001F100

    Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 CRCW12061001F100 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P21190HR6

    Untitled

    Abstract: No abstract text available
    Text: • Type T491 - Chips Solid Tantalum Capacitors MallorY Cap /xF ‘ Cap Tol Case Code - -EIA/ *r IECQ 35 WVDC @ +85°C 23 WVDC @ +125°C + + + + + 0.1 0.15 0.22 0.33 0.47 0.47 0.68 1.0 1.5 2.2 3.3 4.7 4.7 6.8 10 15 22 10% 10% 10%


    OCR Scan     		PDF 7343H T491A104K035AS T491A154K035AS T491A224K035AS T491A334K035AS T491A474K035AS 1284/lndianapolis 46206-1284/Phone: 273-0090/Fax: