Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    T490D106K035AT Search Results

    T490D106K035AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    35d21

    Abstract: MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 35d21 MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


    Original     		PDF MMRF1014N MMRF1014NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N

    t490d106k035at

    Abstract: j3068
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 t490d106k035at j3068

    t490d106k035at

    Abstract: MW6S004NT1 MW6S004N A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S004N MW6S004NT1 t490d106k035at MW6S004NT1 MW6S004N A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 4, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S004N MW6S004NT1

    64580

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 3, 4/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S004N MW6S004NT1 64580

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 4, 1/2014 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1

    MW6S004NT1

    Abstract: MW6S004N FREESCALE PACKING 250GX-0300-55-22 A113 A114 A115 AN1955 C101 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 4, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S004N MW6S004NT1 MW6S004NT1 MW6S004N FREESCALE PACKING 250GX-0300-55-22 A113 A114 A115 AN1955 C101 CDR33BX104AKYS