T4161 Search Results

Contextual Info: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.

SE303

Abstract: SE303 IR
Contextual Info: N E C ELECT R ON I CS INC 30E D • ^57525 ODa^Sñ? 3 ■ T - '+ l- É ’ PHOTO TRAN SISTO R _ P H 1 0 5 PHOTO DETECTOR The PH 105 is a photo transistor in a plastic molded package, and matched PACKAGE DIMENSIONS in millimeter! (inches

Contextual Info: N E C ELECTRON ICS INC 30E D • L4a7S5S OGSTSÔH A ■ T'*# " P H O T O T R A N S IS T O R PH 104 PHOTO T R A N SIST O R The PH 104 is a photo transistor in a plastic molded package, and P A CKA G E D IM E N SIO N S i n m i l l i m e t e r s very suitable for a detector of a photo interrupter.

SE303 IR

Abstract: SE303 PH105 T-41-61 transistor c 4161
Contextual Info: N E C ELECTRONICS INC 30E D • ^57525 ODa^Sñ? 3 ■ o The PH 105 is a photo transistor in a plastic molded package, and matched PACKAGE DIMENSIONS spectrally and mechanically with SE303 IR Emitter. in millimeter« (inches ABSOLUTE MAXIMUM RATINGS (Ta»25 °C)

da 220 volts a 12 volt

Abstract: phototransistor visible light VTT1212 VTT1214
Contextual Info: SbE BOBObO^ Ü00117Ö bbfl ï> .040" NPN Phototransistors VTT1212, 1214 Clear T-1 3/4 Plastic Package E G & G V CT T-41-61 VACTEC PACKAGE DIMENSIONS inch mm 1 .0 0 ( 2 5 .4 ) .2 4 0 (6 .1 0 ) .2 2 0 ( 5 .5 9 ) ' .3 4 (B .6 ) I .1 7 (4 .3 ) .0 5 0 ( 1 .2 7 )

transistor c 4161

Abstract: PH104 SE304 c 4161 k 1 transistor T-41-61 k 4161
Contextual Info: N E C ELECTRONICS INC 30E D • L457S5S 005=1504 & ■ T '* l ' PHOTO T R A N S IS T O R PH 104 PHOTO T R A N S IS T O R The PH 104 is a photo transistor in a plastic molded package, and P A C K A G E D IM E N SIO N S very suitable for a detector of a photo interrupter.

t592

Abstract: T 592
Contextual Info: STANLEY ELECTRIC CO LT» SSE ]> Mb7ülSfl OOOllbU 7T7 • I I S T T mi T -H h s > l PHOTOTRANSISTOR PS201 ■ FEATURES • • • Package Dimensions TO-18 CAN TYPE, HIGH RELIABILITY HIGH SENSITIVITY (lc= 3m A TYP. HIGH DIRECTIVITY ■ APPLICATION • •

BPW89

Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Contextual Info: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area

t410 TRANSISTOR

Abstract: TO46 lens phototransistor 410D TL41 otl410s OT410D OTL410D T410S opto npn L21S
Contextual Info: •i bfl05245 OOODIBÌ fi IOTI OPTO TECHN0L06Y INC MEE D "T -M I-W l OPTO TECHNOLOGY N P N SILICO N P H G T O T R A N S IS T O R TYPE OT 410 Features ■ TO-46 package ■ H erm etically sealed device ■ High sensitivity Description The 0T41C sensors co nsist of

transistor c 4161

Contextual Info: STANLEY ELECTRIC CO LTD SSE D 4 b 7a i5 a 0 0 0 1 ^ 7 0 TTO • I I S T SRNlei PHOTOTRANSISTOR PS302 FEATURES Package Dimensions HIGH SENSITIVITY lc=5m A TYP. HIGH DIRECTIVITY MOLDED EPOXY TYPE APPLICATION ROTARY ENCODER PHOTOSENSOR I Absolute Maximum Ratings

photo transistor application

Abstract: PH108 "Photo Interrupter" cd photo detector SE308 photo transistor high current photo interrupter PHOTO SENSOR of application
Contextual Info: N E C ELECTRONICS INC 3GE J> • b4a?52S OOETSTB T ■ PHOTO TRANSISTO R PH108 PHOTO TRA N SISTO R DESCRIPTION The PH 108 is a photo transistor in a plastic molded package, and very suitable for a detector of a photo interrupter with combination of the SE308.

VTT1112

Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)

transistor c 4161

Abstract: PH110 photo transistor high current H-500 SE310 H500 PH-11
Contextual Info: N E C ELECTRONICS INC 3GE D • b4S7S5S 0 0 2 ^ 7 b ■ PHOTO T R A N S IS T O R PH110 PHOTO T R A N S IS T O R D E S C R IP T I O N The P H 1 10 is a p h o to transistor in a plastic m olded package, and very suitable for a detector of a optical switch w ith c o m b i­

MM5003

Abstract: GL430 PT430F PT430 T-41-61
Contextual Info: SHARP ELEK/ MELEC DIV 1SE D I öläQTTö 00Q2?t.b 3 I Phototransistors P T 4 3 • Features P T 43 0/P T 4 30 F / P T 4 3 F Narrow Acceptance Phototransistor ■ Outline Dimensions 1. Narrow acceptance epoxy resin package A 6 : TYP. ±13” 2. Visible light cut-off type : PT430F

16X1

Contextual Info: SOLDERING TIPS [V ITA C O TE TIPS CHART] 0 0 rr- i- H DIAM ETER x 2 V ? LONG | Cat. Ho. 210-114 210-143 211-127 220-116 230-123 240-111 231-131 Style o f Point C h isel Long C h isel Short C h isel Turned to 1/16 Semi-Chisel Pyramid Corneal Sharp B e v e l Turned to 1/16

FPT500

Abstract: FPT510
Contextual Info: 0 0 7 9 6 1 4 A S O R N E L E C T R O N I C S _ : S3 Æ aborn ELECTRONICS DE | D O V i b l M □ □ □ □ □ 2 7 4 | T-41-61 High-Sensitivity Silicon Phototransistors AN OPTOELECTRONIC COMPANY FPT500 FPT510 O ptoelectronic Products G eneral D e scrip tio n

foto transistor

Abstract: PH108 interrupter photo PH106
Contextual Info: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T^"4 i *“W P H O T O T R A N S IS T O R _ PH106 PHOTO T R A N S IS T O R The PH 106 is a photo transistor in a plastic molded package, and P A C K A G E D IM E N SIO N S very suitable for a detector of a photo interrupter.

Contextual Info: 5bE D 3D3DbDT 0001175 14T » V C T .025" NPN Phototransistors VTT3323LA, 4LA, 5 LA Clear Long T-1 Plastic Package T-41-61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .22 (5.6) .06 (1.5) ' .023 (0.58) .017 (0.43) 7 .160 (*.06) -140 (3.56)" Plastic contour not

Diode ev

Abstract: glass lens phototransistor
Contextual Info: SIEMENS CMPNTS t OPTO H4E D • flS3b32b QQDS227 3 * S I E X S IE M E N S BPY62 SERIES PHOTOTRANSISTOR T-41-61 Package Dimensions in Inches mm .110 -~ 4 .s u - .018 (0.45) 217 (5.5) .211 (5 35) .110 (2 .8 ) .106 (2.7) L |0 1 (2 54) n 571 (14 5) ' .492 (12 5)

photo transistor

Abstract: PH108A SE308
Contextual Info: Q NEC N E C 3QE D ELECTRONICS INC • I.M27SE5 002^5^5 5 ■ _ T E N T A T IV E S P E C IF IC A T IO N PHOTO T R A N S IS T O R ELECTRON DEVICE PH108A T~" M-l - 6>! PHO TO T R A N S IS T O R - N E P O C S E R IE S - D E S C R IP T IO N The PH108A is a photo tr a n sisto r in a p la s tic mold package, and very su ita H e

PT360F

Abstract: PT360
Contextual Info: SHARP E L E K / M ELEC D IV 15E D I 01007^0 0002752 3 | Phototransistors PT 360/PT 360F PT360/PT360F Compact Type Phototransistor • Features 2 Outline Dimensions Unit : mm <j> 3,2mm compact type epoxy resin package Intermediate acceptance (A 6 : TYP. ±20")

Vactec

Abstract: DDD11 VTT1112 VTT1113 VTT1114
Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)

t430

Abstract: PT430F CM2025
Contextual Info: SHARP ELEK/ M ELEC O IV 15E D I 0100710 Q Q 0 2 ? t,b îtrancïçtnri; Phototransïstors P T 4 3 0 /P T 4 3 0 F • Features 1. 3 I P T430/P T430F Narrow Acceptance Phototransistor ■ Unit : mm O u tlin e D im ensions Narrow acceptance epoxy resin package

T4161

Abstract: IRL81
Contextual Info: SIEMENS C MP N T S t OPTO MME D • Ö23b35b 0 0 0 5 5 3 5 7 B S I E X SIEM ENS LPT85A PHOTOTRANSISTOR T-41-61 Package Dimensions in Inches mm au » ' W5ÜI« C O .}« I « IP4S.1 liWB J_ _L H019MK. oncm «■»■■caann -, I I f l x in "SJïïiT ¡-T w ir” "