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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4 MEG X 9 DRAM MOEDULE 5EM1CQHOUCTOR. IH£L 4 MEG DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


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    PDF 30-pin, 575mW 048-cycle 30-Pin MT3D49 T3049

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC M ADVANCE IC R O N 4 MEG SSE T> m DRAM MODULE X T3D49 9 DRAM MODULE b l l l S 4 tì 0004737 7TÔ • MRN 4 MEG x 9 DRAM - FEATURES • Industry standard pinout in a 30-pin, single-in-line m emory module • High-perform ance, CM OS silicon-gate process


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    PDF MT3D49 30-pin, 048-cycle 30-Pin T3D49 A0-A10; A0-A10

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 4 MEG DRAM MODULE 4 MEG X T3D49 9 DRAM MODULE X 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical


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    PDF MT3D49 30-pin, 775mW 048-cycle 30-Pin A0-A10; A0-A10

    T3D49

    Abstract: FPM DRAM 30-pin SIMM MT4C1004
    Text: ADVANCE |u iic : r o n 4 MEG X T3D49 9 DRAM MODULE 4 MEG x 9 DRAM MODULE 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM OS silicon-gate process


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    PDF MT3D49 30-pin, 725mW 048-cycle 30-Pin MT3D49M j1995, MT3049 T3D49 FPM DRAM 30-pin SIMM MT4C1004