t127b
Abstract: t2d t3d t122 25 10 Diode T3D 57 440MX 82440MX t127 Diode T3D 54 T122 T3D 62
Text: Intel 440MX Chipset Electrical and Thermal Specification Datasheet Addendum Product Features • ■ ■ ■ ■ Processor Host Bus Support — Optimized for these 100 MHz or 66 MHz processors: − Mobile Intel® Pentium® III Processor − Intel®Pentium III Processor – Low Power
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Original
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440MX
16-Mbit,
64-Mbit,
128-Mbit
33-MHz
t127b
t2d t3d
t122 25 10
Diode T3D 57
82440MX
t127
Diode T3D 54
T122
T3D 62
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PDF
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T55B
Abstract: T71A t19c t17c t61b t58b t57b T27b t65a T3D 62
Text: 82371AB PCI ISA IDE Xcelerator PIIX4 23.0 Clock, Reset, ISA Bus, X-Bus, and Host Timing Diagrams Figure 41. Clock Timing Period High Time PCICLK, SYSCLK, OSC 2.0V 0.8V Low Time Fall Time Rise Time Figure 42. Reset Inactive Timing SUS_STAT[1:2]# t2f PCIRST#, RSTDRV
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Original
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82371AB
IRQ13
IRQ12/M,
T55B
T71A
t19c
t17c
t61b
t58b
t57b
T27b
t65a
T3D 62
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PDF
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T3D 46 diode
Abstract: Diode T3D 54 T3D 53 diode Diode T3D 55 T3D 47 T3D 53 T3D 43 diode T3D 46 T3D 34 diode T3D 55 diode
Text: PRELIMINARY CY28258 Memory Clock Buffer for 3 DDR and 2 SDRAM DIMMS Features Functional Description • One input to 26 output buffer/driver • Supports up to 3 DDR and 2 SDRAM DIMMS • One additional output for feedback • SMBus interface for individual output control
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Original
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CY28258
CY28258
T3D 46 diode
Diode T3D 54
T3D 53 diode
Diode T3D 55
T3D 47
T3D 53
T3D 43 diode
T3D 46
T3D 34 diode
T3D 55 diode
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PDF
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CYW256OXCT
Abstract: DDR 333 CYW256OXC ILB1206 W256 W256H W256HT w250
Text: W256 12 Output Buffer for 2 DDR and 3 SRAM DIMMS Features Functional Description • One input to 12 output buffer/drivers • Supports up to 2 DDR DIMMs or 3 SDRAM DIMMS • One additional output for feedback • SMBus interface for individual output control
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Original
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W250-02
CYW256OXCT
DDR 333
CYW256OXC
ILB1206
W256
W256H
W256HT
w250
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PDF
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T3D 55
Abstract: 07E-07
Text: ALLEGRO MICROSYSTEMS INC T3D D • 0504336 0003713 S ■ ALGR PROCESS SKL Process SKL NPN Small-Signal Transistor The S K L Process produces double-diffused, NPN silicon epitaxial planar transistors intended for use in general-purpose amplifier or switching applications
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OCR Scan
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050433ft
3jg32
T3D 55
07E-07
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PDF
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t3d 66
Abstract: T3D 64 737 s1g t3d 29 T3D 90
Text: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE
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OCR Scan
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N2200
N3300
N4200
N4700
N5600
t3d 66
T3D 64
737 s1g
t3d 29
T3D 90
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PDF
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Untitled
Abstract: No abstract text available
Text: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7
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OCR Scan
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PDF
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T3D 77
Abstract: OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42
Text: OM7612NM SURFACE MOUNT 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic Surface Mount Package FEATURES • • H erm etic S u rfac e M o un t P a c k a g e A d justab le O utp u t V o ltag e
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OCR Scan
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OM7612NM
LM137HV
534-5776FAX
T3D 77
OM7612NM
Adjustable negative Voltage Regulator 50v
LM137HV
T3D 42
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PDF
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T3D 34
Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Text: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in
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OCR Scan
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N1500
1B11R17
T3D 34
T3D 67
T3D 87
t3d 99
T3D 79
t3d 96
T3D 64
T3D 63
Tusonix
u1g 007
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PDF
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T3D 35 zener DIODE
Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Text: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)
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OCR Scan
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0003b54
T3D 35 zener DIODE
T3D zener DIODE
t3d 99 diode
diode zener t3d 23
T3D 91
DIODE T3D 95
Diode T3D 82
T3D 65 diode
T3D 82 diode
ZENER DIODE T3D
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PDF
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sprague MPSA05
Abstract: No abstract text available
Text: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60
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OCR Scan
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flS13flS0
MPS3721
MPS3826
MPS3827
MPS5127
MPS5131
MPS5132
MPS5133
O-226AA/STYLE
sprague MPSA05
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PDF
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2N3416 Sprague
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain
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OCR Scan
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00Q35fifci
40ISSIPATION
1flS13fiSQ
O-226AA/STYLE
2N3416 Sprague
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PDF
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND CROUP 85 14 0 1 9 SPRAGUE, T3 D • S E M I C O N D S / ICS ÔS1 3 flS0 0 0 0 3 5 7 2 3 93D 03572 _ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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OCR Scan
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THC4037
THC4058
THC4059
THC4060
THC4061
THC4062
THC4121
THC4122
THC4125
THC4126
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PDF
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SENICOND GROUP T3 D • ÖS13SS0 00035=15 8 5 1 4 0 1 9 S P R A G U E ’ S E M I C O N D S / ICS 4 ■ 9 3 D 0 3 5 9 5 J PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS atTA = Z5°C
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OCR Scan
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S13SS0
TP3644
2N3702
2N3703
TP3798
TP3798A
TP3799
TP3799A
2N3905
2N3906
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PDF
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t3d diode
Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
Text: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching
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OCR Scan
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BYV28
BYV28-50
\15\10mm
t3d diode
Diode T3D 64
T3D 65 diode
T3D 64 diode
Diode T3D 03
T3D 89 DIODE
T3D 55 diode
diode t3d
663 t03
T3D 28 diode
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PDF
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T3D 54 DIODE
Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Text: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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bbSBT31
002Cm50
BUK453-100A
BUK453-1OOB
BUK453
-100A
-100B
T3D 54 DIODE
Diode T3D 56
Diode T3D 24
T3D 75 diode
T3D 77 diode
T3D 01 DIODE
T3D 55 diode
Diode T3D 54
T3D 20 diode
T3D+54+DIODE
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PDF
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THC3501
Abstract: THC3564 BBC DSA 22 THC3694
Text: S P R A G U E / S E N IC O N D ^ I GROUP D • ÛS13Û50 GQOBSbü ' 8514019 SPRAGUE! SEMICONDS / I C S 930 ' 03560J Y 7 ■ ' 1- | - —, . -■ —- — - BIPOLAR TRANSISTOR CHIPS ' 1 iI II NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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OCR Scan
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03560J)
THC3414
THC3415
THC3416
THC3417
THC3444
THC3498
THC3499
THC3500
THC3501
THC3564
BBC DSA 22
THC3694
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PDF
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MPS3708C
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP 851 40 19 SPRAGUE, ^ D • 0513Û5Q 0GÜ35L.5 b ■ S E M I C O N D S / ICS 93D 0 3 5 6 5 ^ T 'c L '7 - 'Cf û BIPOLAR TRANSISTOR CHIPS | i ! NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain
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OCR Scan
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PS3405C
PS3414C
PS3415C
PS3416C
PS3417C
MPS3563C
PS3565C
PS3566C
PS3567C
PS3568C
MPS3708C
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PDF
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Untitled
Abstract: No abstract text available
Text: m h m MTA-100 and MTA-156 Connectors and Headers; CST-100 Connectors and Headers and SL-156 Connectors Catalog 82056 R evised 1-96 CST-100 Shrouded Headers— Straight and Right Angle M aterial and Finish Right Angle .0 2 5 [0 .6 4 ] Square Straight Post (.0 2 5 [0 .6 4 ] Square)
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OCR Scan
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MTA-100
MTA-156
CST-100
SL-156
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PDF
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T3D zener DIODE
Abstract: T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode T3D 66 diode T3D 19 zener DIODE T3D 15 zener DIODE Diode T3D 56
Text: SP RA GUE /S EMIC OND GROUP 8 5 14 01 9 SPRAGUE. =13 D • Ô513Ô5D 0D03bE2 3 ■ S E M I C O N D S / ICS 93D 03622 p T '/S-C S DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS atTfl = 25°C Leakage Current Zener Voltage Zener Impedance
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OCR Scan
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0D03bE2
T3D zener DIODE
T3D 63 ZENER DIODE
ZENER DIODE T3D
T3D zener
T3D 87
T3D 47 diode
T3D 66 diode
T3D 19 zener DIODE
T3D 15 zener DIODE
Diode T3D 56
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PDF
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T3D 62
Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
Text: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator
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OCR Scan
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AT-41400
AT-41400
Rn/50
MM475flM
0017bE3
17L24
T3D 62
t3d 98
T3D 87
AT-41400-GP4
t3d 54
chip die npn transistor
t3d 69
T3D 83
t3d 66
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PDF
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T3D 29 zener DIODE
Abstract: diode zener t3d 23 T3D 67 diode T3D 58 diode T3D zener DIODE T3D 83 DIODE T3D 81 DIODE T3D 98 diode Diode T3D 57 Diode T3D 81
Text: SPRAGUE/SEMICOND 85 14 01 9 SPRAGUE. GROU P TB D • Ô513ÔSG S E M I C O N D S / ICS ÜQD3bEG T ■ 93 D 0 3 6 2 0 T ~ t f ~ Q t t DIODE CHIPS / ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C
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OCR Scan
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PDF
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AB028V1-14
Abstract: DDD4733 S443 CuMoCu
Text: EBAlpha 23-30 GHz Variable Gain Amplifier AB028V1-14 Features • 30 dB Gain 0.235 5.60 m m ■ 30 dB Attenuation Range 1 0.008 - (0.20 m m ) 0.225 ■ +16 dBm Output Power J (5.72 m m ) 0.450 ■ 3 dB Noise Figure ^ . 1 (11.43 m m ) 0.024 (0.61 m m ) ■ Rugged, Reliable Package
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OCR Scan
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AB028V1-14
AB028V1
10/99A
DD04734
AB028V1-14
DDD4733
S443
CuMoCu
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PDF
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COMPENSATING CAPACITORS N750
Abstract: T3D 53 T3D 64 T3D 42 t3d 66 Tusonix T3D 34 T3D 38 T3D 69 T3D 63
Text: ESE D TUSONIX INC • For Temperature Compensation — T U S O N IX Tem perature Compensating Capacitors are capacitance sensitive to temperature in predetermined degrees de pending upon the ceramic dielectric used. Because of this controlled and predictable characteristic, they
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OCR Scan
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G0G02Ã
N1500
N2200
N3300
N4200
N4700
N5600
N3300
COMPENSATING CAPACITORS N750
T3D 53
T3D 64
T3D 42
t3d 66
Tusonix
T3D 34
T3D 38
T3D 69
T3D 63
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PDF
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