Contextual Info: MPS5133 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

sprague MPSA05

Contextual Info: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

MPS3568

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: B IPO LA R TRANSISTOR CHIPS NPN Transistors ‘M P S ’ Device ly p e s ELECTRICAL CHARACTERISTICS al T* - 25°C OC C ur«t Gain '«0 Device Type MPS3405C MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C MPS3S69C MPS3642C MPS3646C

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SPRA GU E. T3 D • OSD433Ö □□□35^1 h ■ ALGR S E M I C O N D S / ICS D 93 D 03591 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

MPS3405C

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: ALLEGRO MICROSYSTEMS INC 85 140 19 SP RA GU E. D T3 • 0504330 G0G3SbS S ■! AL6R S E M I C O N D S / ICS TA 9 3 D 03 5 6 5 ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C DC Current Gain

transistor 2N929

Abstract: 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 2n929 2N5172 SILICON DICE motorola MPS5133
Contextual Info: NOTOROLA SC {DIODES/OPTO* 6367255 MOTOROLA SC 34 D I O D E S /OPTO ' ÏF|bBb7ESS 0 0 3 7 ^ 34C 37999 . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 7 " D ~7 2C5088 DIE NO. — NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types:

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40