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    T33N10E

    Abstract: T33N10
    Text: MTB33N10E Preferred Device Power MOSFET 33 Amps, 100 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTB33N10E MTB33N10E/D T33N10E T33N10

    T33N10E

    Abstract: T33N10 AN569 MTB33N10E MTB33N10ET4
    Text: MTB33N10E Preferred Device Power MOSFET 33 Amps, 100 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTB33N10E r14525 MTB33N10E/D T33N10E T33N10 AN569 MTB33N10E MTB33N10ET4