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    T2T TRANSISTOR Search Results

    T2T TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    T2T TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


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    PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    T2T TRANSISTOR

    Abstract: BFR591
    Text: Philips Semiconductors bbS3^31 DD31T1E T2T • APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHILIPS/DISCRETE FEA TU R ES b'lE D ■ PINNING • High power gain PIN • Low noise figure 1 emitter • High transition frequency 2


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    PDF DD31T1E BFR591 BFR591 MSB037 T2T TRANSISTOR

    TIP32 TI

    Abstract: No abstract text available
    Text: TIP32; A TIP32B; C J^ P H I L IP S INTERNATIONAL SbE D • 711DÛBb □GMBHTD T2T « P H I N T - 33-11 SILICON EPITAXIAL BASE POWER TRANSISTORS PNP transistors in a plastic T 0-22 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.


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    PDF TIP32; TIP32B; TIP31 TIP32 O-220. TIP32B: T-33-19 7110fl2b 00434Tb TIP32 TI

    fmmta92

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 •JANUARY 1996 FMMTA92 FMMTA93 O_ P A R T M A R K IN G DETAILS: FMM TA92 - 4E FMM TA93 -2 E F M M T A 9 2 R - 8E F M M T A 9 3 R - 6E C O M P L E M E N T A R Y TY PE S: - FM M TA92 - FM M TA42


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    PDF FMMTA92 FMMTA93 FMMTA92R FMMTA93R FMMTA42 FMMTA43

    T2T TRANSISTOR

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is


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    PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP52T3 inch/4000 b3b72S5 T2T TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


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    PDF R02731B10W 0CH3CI54

    2SC4713K

    Abstract: 2SC4774 T106 T146 T147
    Text: h 7 > i / 7, £ /Transistors 2SC 4713K 2S C 4774 2SC4713K/2SC4774 Epitaxial Planar NPN Silicon Transistor raJS /R F Amplifier • ^M ^i& E I/D in ien sio n s Unit : mm 1) Ron 2) • Features 1) Very low output on-state resist­ ance. 2) Low capacitance.


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    PDF 2SC4713K/2SC4774 2SC4713K 2SC4774 2SC4713K SC-59 SC-70 100mVrms 2SC4774 T106 T146 T147

    K 3053 TRANSISTOR

    Abstract: k 246 transistor
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


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    PDF R02731B10W 0CH3C54 K 3053 TRANSISTOR k 246 transistor

    transistor marking t2T

    Abstract: T2T TRANSISTOR ST4403
    Text: Philips Semiconductors Product specification PNP switching transistor PMST4403 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification. DESCRIPTION


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    PDF OT323 PMST4401. PMST4403 PMST4403 ST4403 transistor marking t2T T2T TRANSISTOR ST4403

    NDB7052L

    Abstract: NDP7052L
    Text: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using


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    PDF NDP7052L/ NDB7052L bSD113D NDP7052L

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON * 71. nn g^@l[LggirMnigi_SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ ■ . ■ 30 MHz 28 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION . P o u t = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


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    PDF SD1407 SD1407 DQ7G220

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX704 ZTX705 ISSUE 3 - MAY 94_ FEATURES * 120 V olt VCE0 * 1 A m p continuous current * Gain o f 3K a t lc=1 Am p * Ptot=1 W att APPLICATIONS * Lamp, solenoid and relay drivers


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    PDF ZTX704 ZTX705 001G35S

    T0-126 pin configuration

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V


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    PDF O-126 BD434, BD436, BD438, BD440 BD442 BD433/435/437/439/441 711DflSb BD433 T0-126 pin configuration

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 339 b 11.5 A l/bs 500 V ^bsion Package Ordering Code 0.5 n TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


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    PDF O-218 C67078-S3133-A2 235b05 O-218AA A235bGS

    Untitled

    Abstract: No abstract text available
    Text: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    PDF STB5NA80 O-262) O-263) O-263

    NDS8934

    Abstract: Scans-000
    Text: Nat t onai Semiconductor " J u n e 19 96 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    PDF NDS8934 bS01130 Scans-000

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


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    PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F

    Untitled

    Abstract: No abstract text available
    Text: TLP862JLP866 TLP867 INFRARED + PHOTO DARLINGTON TRANSISTOR TLP862 VCR, COMPACT DISC PLAYER COPYING MACHINE, FACSIMILE, PRINTER VENDING MACHINE, TICKETING MACHINE FOR VARIOUS POSITION DETECTION The TLP862, TLP866 and TLP867 are photo interrupters with an infrared LED and a high sensitivity


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    PDF TLP862JLP866 TLP867 TLP862) TLP862, TLP866 TLP867 TLP862 TLP866

    BUH313

    Abstract: No abstract text available
    Text: SGS-THOMSON IMDigæilLieîœiiMei BUH313 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SG S-T H O M SO N P R E F E R R E D S A LE S T Y P E . HIGH V O LT A G E CAPABILITY • U.L. R E C O G N ISE D ISOWATT218 P A C K A G E U.L. FILE# E817 3 4 (N . APPLICATIONS:


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    PDF BUH313 ISOWATT218 E81734 5C05081 07fll00

    Tektronix 7603

    Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
    Text: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO


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    PDF CB-19 Tektronix 7603 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature

    2C3303

    Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
    Text: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications


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    PDF 2N6676, 2N6677, 2N6678 2N6676 2N6677 2N6678 2N6676. 2C3303 ca3725 6676 transistor transistor C200 2CS9

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY ADVANCE INFORMATION DS3638 • 2.0 Z N 4 1 4 Z & Z N 4 1 6 E AM RADIO RECEIVERS The ZN414Z is a 10 transistor tuned radio frequency TRF circuit packaged in a 3-pin TO-92 plastic package for simplicity and space economy. The circuit provides a complete R.F. amplifier, detector and


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    PDF DS3638 ZN414Z ZN416E ZN414Z -30dB 37bfl522