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    T20 64 DIODE Search Results

    T20 64 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    T20 64 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    simple 5.1 home theater circuit diagram with usb port

    Abstract: No abstract text available
    Text: high performance low power computing Colibri T20 Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 500 48 00 l www.toradex.com l info@toradex.com Colibri T20 Datasheet Page | 2 Revision History Date Doc. Rev. Colibri T20 Version Changes


    Original     		PDF 18-Nov-2010 23-Dec-2010 25-Jul-2011 simple 5.1 home theater circuit diagram with usb port

    VG36641641

    Abstract: VG36641641BT VG36648041BT vg36644041
    Text: VIS VG36644041BT / VG36648041BT / VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 words x 4 bits x 4 banks, 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, respectively. It is fabricated with


    Original     		PDF VG36644041BT VG36648041BT VG36641641BT PC100 PC133 VG36641641BT 54-Pin VG36641641 vg36644041

    dynamic ram binary cell

    Abstract: No abstract text available
    Text: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced


    Original     		PDF VG3664321 1G5-0099 dynamic ram binary cell

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		PDF VG36648041BT 8/10ns 1G5-0152

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		PDF VG36648041BT 8/10ns 1G5-0138

    dynamic ram binary cell

    Abstract: QBA-1 qab1
    Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		PDF VG36643241AT 86-pin 1G5-0172 dynamic ram binary cell QBA-1 qab1

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,


    Original     		PDF VG3664802 VG3664162 152-word 304-word 576-word 16-bit 1G5-0097

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		PDF VG36648041BT 8/10ns 1G5-0152

    Untitled

    Abstract: No abstract text available
    Text: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Input voltage range 12V nominal 9 – 18V 24V nominal 18 – 36V 48V nominal 36 – 75V “W” model 24V nominal 9 – 36V 48V nominal 18 – 75V


    Original     		PDF 36VDC 100mS 50VDC 100VDC 25mAp-p, EN55022 PME20- 7uF/50V 1000pf/2KV

    VG36641641

    Abstract: No abstract text available
    Text: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS


    Original     		PDF VG366480 1G5-0151 VG36641641

    Untitled

    Abstract: No abstract text available
    Text: VIS N Grade 64Mb CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		PDF 8/10ns 1G5-0161

    VG36648041BT-7

    Abstract: VG36648041CT
    Text: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		PDF VG36648041CT 1G5-0153 VG36648041BT-7 VG36648041CT

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only


    Original     		PDF VG36648041BT 1G5-0114

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,


    Original     		PDF VG3664802 VG3664162 152-word 304-word 576-word 16-bit 1G5-0143

    PS-3PF-S4T1-PKL1

    Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d88-6130 PS-3PF-S4T1-PKL1 CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV

    pme20-24t0515

    Abstract: PMT-048 T20 46 diode pme20-24t T20 80 diode
    Text: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT DC/DC HIGH PERFORMANCE Features • Output current up to 4A • Standard 2” x 1.6” x 0.4” package • High efficiency up to 87% • 2:1 and 4:1 wide input voltage range • Six-sided continuous shield


    Original     		PDF 36VDC 50VDC 100VDC 25mAp-p, PME2048xxxW 2uF/100V 1000pf/2KV EN55022 pme20-24t0515 PMT-048 T20 46 diode pme20-24t T20 80 diode

    25B crystal

    Abstract: PDIP20 PDIP28 PSO20 ST62E20 ST62T10 ST62T15 ST62T20 ST62T25 ST62T10 programmer
    Text: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM


    Original     		PDF ST62T10, ST62E20, ST62SON 25B crystal PDIP20 PDIP28 PSO20 ST62E20 ST62T10 ST62T15 ST62T20 ST62T25 ST62T10 programmer

    jrc 319

    Abstract: ST62E25 equivalent 319 JRC St62t25b6 fet bd 736
    Text: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM


    Original     		PDF ST62T10, ST62E20, jrc 319 ST62E25 equivalent 319 JRC St62t25b6 fet bd 736

    jrc 319

    Abstract: jrc 317 X14V 319 JRC ST62T10B6/HWD St62t25b6 ST62T25B6/HWD 317 jrc JRC 022 ST62T10 programmer
    Text: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM


    Original     		PDF ST62T10, ST62E20, ST62MSON jrc 319 jrc 317 X14V 319 JRC ST62T10B6/HWD St62t25b6 ST62T25B6/HWD 317 jrc JRC 022 ST62T10 programmer

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MPXY8021A Rev 1, 05/2005 Tire Pressure Monitoring Sensor Temperature Compensated and Calibrated, Fully Integrated, Digital Output The Freescale Semiconductor, Inc. MPXY8021A sensor is an 8-pin tire monitoring sensor which is comprised of a variable capacitance pressure


    Original     		PDF MPXY8021A

    1SS133 T-77

    Abstract: T84 5pin
    Text: Introduction Product packaging and availability Leaded diodes on tape Product availability for the leaded diodes is shown in the following tables and is ranked as standard (★), or semi-standard (☆). • Standard (★) means that the part is kept in stock and is readily available.


    OCR Scan     		PDF 1SS252 1SS253 1SS254 1SS265 DO-35 1SS133 T-77 T84 5pin

    marking t17

    Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
    Text: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3


    OCR Scan     		PDF OT-89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 DZ89-C6V8 DZ89-C7V5 DZ89-C8V2 marking t17 ZENER 89A T29 marking DZ89-C51 T20 MARKING

    DZ89-C91

    Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
    Text: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £


    OCR Scan     		PDF -C100 -C120 -C180 OT-89A DZ89-C43 DZ89-C47 DZ89-C51 DZ89-C56 DZ89-C62 DZ89-C68 DZ89-C91 c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking

    st62ti

    Abstract: FZJ 131 FZJ 141 ST62TIo JRC 022 JRC 082 PDIP20 PDIP28 PS020 ST62E20
    Text: r Z T S C S -T H O M S O N *J M , SâlD g»i[LIi(ê«S ill(êê ST62T10, T15, T20, T25 ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency


    OCR Scan     		PDF ST62TIo, ST62E20, 6210BB6/XXX PDIP20 ST6220BB1/XXX ST6220BB6/XXX ST6210BM1/XXX 6210BM6/XXX PS020 ST6220BM1 st62ti FZJ 131 FZJ 141 ST62TIo JRC 022 JRC 082 PDIP20 PDIP28 PS020 ST62E20