simple 5.1 home theater circuit diagram with usb port
Abstract: No abstract text available
Text: high performance low power computing Colibri T20 Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 500 48 00 l www.toradex.com l info@toradex.com Colibri T20 Datasheet Page | 2 Revision History Date Doc. Rev. Colibri T20 Version Changes
|
Original
|
18-Nov-2010
23-Dec-2010
25-Jul-2011
simple 5.1 home theater circuit diagram with usb port
|
PDF
|
VG36641641
Abstract: VG36641641BT VG36648041BT vg36644041
Text: VIS VG36644041BT / VG36648041BT / VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 words x 4 bits x 4 banks, 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, respectively. It is fabricated with
|
Original
|
VG36644041BT
VG36648041BT
VG36641641BT
PC100
PC133
VG36641641BT
54-Pin
VG36641641
vg36644041
|
PDF
|
dynamic ram binary cell
Abstract: No abstract text available
Text: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced
|
Original
|
VG3664321
1G5-0099
dynamic ram binary cell
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
|
Original
|
VG36648041BT
8/10ns
1G5-0152
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
|
Original
|
VG36648041BT
8/10ns
1G5-0138
|
PDF
|
dynamic ram binary cell
Abstract: QBA-1 qab1
Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
|
Original
|
VG36643241AT
86-pin
1G5-0172
dynamic ram binary cell
QBA-1
qab1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,
|
Original
|
VG3664802
VG3664162
152-word
304-word
576-word
16-bit
1G5-0097
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
|
Original
|
VG36648041BT
8/10ns
1G5-0152
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Input voltage range 12V nominal 9 – 18V 24V nominal 18 – 36V 48V nominal 36 – 75V “W” model 24V nominal 9 – 36V 48V nominal 18 – 75V
|
Original
|
36VDC
100mS
50VDC
100VDC
25mAp-p,
EN55022
PME20-
7uF/50V
1000pf/2KV
|
PDF
|
VG36641641
Abstract: No abstract text available
Text: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS
|
Original
|
VG366480
1G5-0151
VG36641641
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS N Grade 64Mb CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
|
Original
|
8/10ns
1G5-0161
|
PDF
|
VG36648041BT-7
Abstract: VG36648041CT
Text: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
|
Original
|
VG36648041CT
1G5-0153
VG36648041BT-7
VG36648041CT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
|
Original
|
VG36648041BT
1G5-0114
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,
|
Original
|
VG3664802
VG3664162
152-word
304-word
576-word
16-bit
1G5-0143
|
PDF
|
|
|
PS-3PF-S4T1-PKL1
Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
d88-6130
PS-3PF-S4T1-PKL1
CT3528
HTD12
PS-10PF-D4T1-PKL1
NEC c157
lcd power board schematic APS 254
CBD49
htd11
CRML08W
TEMSV
|
PDF
|
pme20-24t0515
Abstract: PMT-048 T20 46 diode pme20-24t T20 80 diode
Text: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT DC/DC HIGH PERFORMANCE Features • Output current up to 4A • Standard 2” x 1.6” x 0.4” package • High efficiency up to 87% • 2:1 and 4:1 wide input voltage range • Six-sided continuous shield
|
Original
|
36VDC
50VDC
100VDC
25mAp-p,
PME2048xxxW
2uF/100V
1000pf/2KV
EN55022
pme20-24t0515
PMT-048
T20 46 diode
pme20-24t
T20 80 diode
|
PDF
|
25B crystal
Abstract: PDIP20 PDIP28 PSO20 ST62E20 ST62T10 ST62T15 ST62T20 ST62T25 ST62T10 programmer
Text: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM
|
Original
|
ST62T10,
ST62E20,
ST62SON
25B crystal
PDIP20
PDIP28
PSO20
ST62E20
ST62T10
ST62T15
ST62T20
ST62T25
ST62T10 programmer
|
PDF
|
jrc 319
Abstract: ST62E25 equivalent 319 JRC St62t25b6 fet bd 736
Text: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM
|
Original
|
ST62T10,
ST62E20,
jrc 319
ST62E25 equivalent
319 JRC
St62t25b6
fet bd 736
|
PDF
|
jrc 319
Abstract: jrc 317 X14V 319 JRC ST62T10B6/HWD St62t25b6 ST62T25B6/HWD 317 jrc JRC 022 ST62T10 programmer
Text: ST62T10, T15, T20, T25 - ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency • -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes ■ 5 Interrupt Vectors ■ Look-up Table capability in OTP/EPROM
|
Original
|
ST62T10,
ST62E20,
ST62MSON
jrc 319
jrc 317
X14V
319 JRC
ST62T10B6/HWD
St62t25b6
ST62T25B6/HWD
317 jrc
JRC 022
ST62T10 programmer
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MPXY8021A Rev 1, 05/2005 Tire Pressure Monitoring Sensor Temperature Compensated and Calibrated, Fully Integrated, Digital Output The Freescale Semiconductor, Inc. MPXY8021A sensor is an 8-pin tire monitoring sensor which is comprised of a variable capacitance pressure
|
Original
|
MPXY8021A
|
PDF
|
1SS133 T-77
Abstract: T84 5pin
Text: Introduction Product packaging and availability Leaded diodes on tape Product availability for the leaded diodes is shown in the following tables and is ranked as standard (★), or semi-standard (☆). • Standard (★) means that the part is kept in stock and is readily available.
|
OCR Scan
|
1SS252
1SS253
1SS254
1SS265
DO-35
1SS133 T-77
T84 5pin
|
PDF
|
marking t17
Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Text: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3
|
OCR Scan
|
OT-89A
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
DZ89-C6V2
DZ89-C6V8
DZ89-C7V5
DZ89-C8V2
marking t17
ZENER 89A
T29 marking
DZ89-C51
T20 MARKING
|
PDF
|
DZ89-C91
Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Text: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £
|
OCR Scan
|
-C100
-C120
-C180
OT-89A
DZ89-C43
DZ89-C47
DZ89-C51
DZ89-C56
DZ89-C62
DZ89-C68
DZ89-C91
c3v9
C82 diode
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
DZ89-C6V2
T29 marking
|
PDF
|
st62ti
Abstract: FZJ 131 FZJ 141 ST62TIo JRC 022 JRC 082 PDIP20 PDIP28 PS020 ST62E20
Text: r Z T S C S -T H O M S O N *J M , SâlD g»i[LIi(ê«S ill(êê ST62T10, T15, T20, T25 ST62E20, E25 8-BIT OTP/EPROM MCUs WITH A/D CONVERTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency
|
OCR Scan
|
ST62TIo,
ST62E20,
6210BB6/XXX
PDIP20
ST6220BB1/XXX
ST6220BB6/XXX
ST6210BM1/XXX
6210BM6/XXX
PS020
ST6220BM1
st62ti
FZJ 131
FZJ 141
ST62TIo
JRC 022
JRC 082
PDIP20
PDIP28
PS020
ST62E20
|
PDF
|
