simple 5.1 home theater circuit diagram with usb port
Abstract: No abstract text available
Text: high performance low power computing Colibri T20 Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 500 48 00 l www.toradex.com l info@toradex.com Colibri T20 Datasheet Page | 2 Revision History Date Doc. Rev. Colibri T20 Version Changes
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18-Nov-2010
23-Dec-2010
25-Jul-2011
simple 5.1 home theater circuit diagram with usb port
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Untitled
Abstract: No abstract text available
Text: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Input voltage range 12V nominal 9 – 18V 24V nominal 18 – 36V 48V nominal 36 – 75V “W” model 24V nominal 9 – 36V 48V nominal 18 – 75V
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36VDC
100mS
50VDC
100VDC
25mAp-p,
EN55022
PME20-
7uF/50V
1000pf/2KV
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PDF
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RJA14
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU SD103ATW FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SCHOTTKY
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OT-363
OD-123+
FM120-M+
SD103ATW
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
RJA14
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PDF
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PS-3PF-S4T1-PKL1
Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d88-6130
PS-3PF-S4T1-PKL1
CT3528
HTD12
PS-10PF-D4T1-PKL1
NEC c157
lcd power board schematic APS 254
CBD49
htd11
CRML08W
TEMSV
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PDF
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dynamic ram binary cell
Abstract: No abstract text available
Text: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced
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VG3664321
1G5-0099
dynamic ram binary cell
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PDF
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GR42-6
Abstract: 2j 103k GR43-2 GHM3145 GHM3045 rr 102k 2kv rr 681k- 1kv capacitor GRM42-6 rr 471k 1kv GRM40B103K
Text: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-4 This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor
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C02E-4.
C02E4
C02E-4
GRM33
GRM36YGRM44-1
GRM39YGRM44-1
GRM33
GRM40-024
GR42-6
2j 103k
GR43-2
GHM3145
GHM3045
rr 102k 2kv
rr 681k- 1kv capacitor
GRM42-6
rr 471k 1kv
GRM40B103K
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PDF
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pme20-24t0515
Abstract: PMT-048 T20 46 diode pme20-24t T20 80 diode
Text: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT DC/DC HIGH PERFORMANCE Features • Output current up to 4A • Standard 2” x 1.6” x 0.4” package • High efficiency up to 87% • 2:1 and 4:1 wide input voltage range • Six-sided continuous shield
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36VDC
50VDC
100VDC
25mAp-p,
PME2048xxxW
2uF/100V
1000pf/2KV
EN55022
pme20-24t0515
PMT-048
T20 46 diode
pme20-24t
T20 80 diode
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PDF
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smd glass zener diode color codes
Abstract: KA 511 common anode alphanumeric display 5252 F 1108 ANSI C78.377 2011 F1109 5252 F led D1060 F1060 TLOH16CP H1032
Text: 2011-3 PRODUCT GUIDE LED Lamps SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g High-Brightness LED Lamps Overview of Toshiba’s Visible LED Lamp Family 1. New Product Digest 1. 2. 3. 4. 5. High-Luminous-Flux White LED Lamps for General Lighting See-Through Type : TL19W01 Series . 4
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TL19W01
F1108,
F1109
BCE0006G
smd glass zener diode color codes
KA 511 common anode alphanumeric display
5252 F 1108
ANSI C78.377 2011
5252 F led
D1060
F1060
TLOH16CP
H1032
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PDF
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dynamic ram binary cell
Abstract: QBA-1 qab1
Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36643241AT
86-pin
1G5-0172
dynamic ram binary cell
QBA-1
qab1
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GRM230Y5V475Z16
Abstract: GR42-6 hr r 681k- 1kv GR40 MURATA HR R 221k 2kv GR42-2 grh110 GHM1540 GHM2143 B 473 M AC250 PT GHM3145
Text: This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-5 This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor
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C02E-5.
C02E5
C02E-5
GRM33
GRM36YGRM44-1
GRM39YGRM44-1
GRM36-019
GR36YGR44-1
GRM230Y5V475Z16
GR42-6
hr r 681k- 1kv
GR40 MURATA
HR R 221k 2kv
GR42-2
grh110
GHM1540
GHM2143 B 473 M AC250 PT
GHM3145
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36648041BT
8/10ns
1G5-0152
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36648041BT
8/10ns
1G5-0138
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PDF
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Untitled
Abstract: No abstract text available
Text: VIS N Grade 64Mb CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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8/10ns
1G5-0161
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PDF
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VG36648041BT-7
Abstract: VG36648041CT
Text: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36648041CT
1G5-0153
VG36648041BT-7
VG36648041CT
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36648041BT
8/10ns
1G5-0152
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PDF
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lvds connector pinout
Abstract: RS232A tegra 2 T20 nvidia tegra 3 pin connector 40 pins led screen LVDS nvidia Tegra t20 LVDS connector 40 pins NAME LVDS 30 pin hirose dvi tegra 2 nvidia led screen LVDS connector 40 pins
Text: Iris V1.1 Baseboard Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 340 80 85 l www.toradex.com l info@toradex.com Iris Datasheet Revision History Date Doc. Rev. Iris Version Changes 20-Jan-11 Rev. 0.9 V1.0 Preliminary Release 24-Mar-11
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20-Jan-11
24-Mar-11
May-11
RS-232
2002/95/EC:
lvds connector pinout
RS232A
tegra 2 T20
nvidia tegra 3
pin connector 40 pins led screen LVDS
nvidia Tegra t20
LVDS connector 40 pins NAME
LVDS 30 pin hirose dvi
tegra 2 nvidia
led screen LVDS connector 40 pins
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VG36641641
Abstract: No abstract text available
Text: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS
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VG366480
1G5-0151
VG36641641
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SD10
Abstract: 100L AD8385 AD8389 adi clx
Text: 10-Bit, 12-Channel Decimating LCD DECDRIVER with Level Shifters AD8385 FEATURES GENERAL DESCRIPTION The AD8385 provides a fast, 10-bit, latched decimating digital input that drives 12 high voltage outputs. 10-bit input words are loaded into 12 separate high speed, bipolar DACs sequentially.
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10-Bit,
12-Channel
AD8385
AD8385
10-bit
AD8385s
100-Lead,
SV-100-3)
SD10
100L
AD8389
adi clx
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VG36641641
Abstract: VG36641641BT
Text: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36641641BT
16-bit
8/10ns
1G5-0127
VG36641641
VG36641641BT
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PDF
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1SS133 T-77
Abstract: T84 5pin
Text: Introduction Product packaging and availability Leaded diodes on tape Product availability for the leaded diodes is shown in the following tables and is ranked as standard (★), or semi-standard (☆). • Standard (★) means that the part is kept in stock and is readily available.
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OCR Scan
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1SS252
1SS253
1SS254
1SS265
DO-35
1SS133 T-77
T84 5pin
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PDF
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marking t17
Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Text: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3
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OCR Scan
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OT-89A
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
DZ89-C6V2
DZ89-C6V8
DZ89-C7V5
DZ89-C8V2
marking t17
ZENER 89A
T29 marking
DZ89-C51
T20 MARKING
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Untitled
Abstract: No abstract text available
Text: MLL5913 thru MLL5956 Microsemi Corp. ? A-IV/I tub ftotiti experts 1V4 f t SCO rrSD ALE , 4 / h>i im*ie information call (61 2) 941-6300 D E S C R IP T IO N / F E A T U R E S LEADLESS GLASS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING
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OCR Scan
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MLL5913
MLL5956
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PDF
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DZ89-C91
Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Text: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £
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OCR Scan
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-C100
-C120
-C180
OT-89A
DZ89-C43
DZ89-C47
DZ89-C51
DZ89-C56
DZ89-C62
DZ89-C68
DZ89-C91
c3v9
C82 diode
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
DZ89-C6V2
T29 marking
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PDF
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TC74HC181
Abstract: TC74HC181P IC 74LS181 pin diagram 6p3p
Text: TC74HC181P TC74HC18 1 P A R ITHMETIC LOGIC UNIT/FUNCTION GENERATOR The TC74HC181 is a high speed CMOS ARITHMETIC LOGIC UNIT ALU /FUNCTION GENERATORS fabricated with silicon gate C^MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining
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TC74HC181P
TC74HC18
TC74HC181
TC74HC181P
IC 74LS181 pin diagram
6p3p
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