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    T1345 Search Results

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    T1345 Price and Stock

    Rochester Electronics LLC SMBT1345LT1

    SS SOT23 GP XSTR SPCL TR
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    DigiKey SMBT1345LT1 Bulk 579,000 11,539
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    Rochester Electronics LLC SFT1345-H

    MOSFET P-CH 100V 11A TP
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    DigiKey SFT1345-H Bulk 20,652 720
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    TE Connectivity RT134524

    RELAY GEN PURPOSE SPST 12A 24V
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    DigiKey RT134524 Tube 1,000
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    Avnet Americas RT134524 Bulk 1,000
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    Newark RT134524 Bulk 1,000
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    RS RT134524 Bulk 14 Weeks 1,000
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    Master Electronics RT134524
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    onsemi SFT1345-H

    MOSFET P-CH 100V 11A TP
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    DigiKey SFT1345-H Bulk
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    Rochester Electronics SFT1345-H 20,652 1
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    Flip Electronics SFT1345-TL-H

    MOSFET P-CH 100V 11A TP-FA
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    DigiKey SFT1345-TL-H Reel 310
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    T1345 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: T1345 Ordering number : EN8987A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET T1345 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=210mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1020pF(typ.)


    Original     		PDF SFT1345 EN8987A 1020pF

    s1d13715

    Abstract: 1066H LCD sharp 320X320 T-1228 T-1227 phone 14 pin vga camera pinout T1128 T1429 1520H RGB565 to rgb888 epson
    Text: S1D13715 Mobile Graphics Engine with Megapixel Support Hardware Functional Specification Document Number: X52A-A-001-07 SEIKO EPSON CORPORATION 2002-2008. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		PDF S1D13715 X52A-A-001-07 X52A-A-001-02 0128h] 012Ah] X52A-A-001-01 1066H LCD sharp 320X320 T-1228 T-1227 phone 14 pin vga camera pinout T1128 T1429 1520H RGB565 to rgb888 epson

    13451

    Abstract: T-13451
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 1CT : 1.8CT* Turns Ratio + 2% PARAMETER MIN. MAX. 22 Open Circuit Inductance SCHEMATIC DIAGRAM UNITS mHy Leakage Inductance 15 µHy Interwinding Capacitance (CW/W) 100 pF 7 1 6 Pri


    Original     		PDF 41003/EN 700mV UL94-VO 10KHz T-13451 13451 T-13451

    13453

    Abstract: T-13453 needle flame test hipot pulse
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 1CT : 2.5CT* Turns Ratio + 2% SCHEMATIC DIAGRAM PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy Leakage Inductance 30 µHy Interwinding Capacitance (CW/W) 100 pF 7 1 6 Pri


    Original     		PDF 41003/EN 700mV UL94-VO 10KHz T-13453 13453 T-13453 needle flame test hipot pulse

    13450

    Abstract: T-13450
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 Turns Ratio + 2% SCHEMATIC DIAGRAM 1CT : 1CT PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy 5 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD) 40


    Original     		PDF 41003/EN 700mV UL94-VO 10KHz T-13450 13450 T-13450

    T-1345

    Abstract: t1345
    Text: T1345 Ordering number : EN8987 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET T1345 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=210mΩ(typ.) 4V drive • • Input Capacitance Ciss=1020pF(typ.) Halogen free compliance


    Original     		PDF EN8987 SFT1345 1020pF PW10s) PW10s, T-1345 t1345

    13454

    Abstract: T-13454
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 1CT : 2.5CT* Turns Ratio + 2% PARAMETER MIN. MAX. 22 Open Circuit Inductance SCHEMATIC DIAGRAM UNITS mHy Leakage Inductance 40 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD)


    Original     		PDF 41003/EN 700mV UL94-VO 10KHz T-13454 13454 T-13454

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8987B T1345 Power MOSFET http://onsemi.com –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • • ON-resistance RDS on 1=210mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1020pF(typ.) Protection diode in


    Original     		PDF EN8987B SFT1345 1020pF PW10s) PW10s,

    13455

    Abstract: T-13455
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 Turns Ratio + 2% SCHEMATIC DIAGRAM 1CT : 2CT PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy Leakage Inductance 11 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD)


    Original     		PDF 41003/EN 700mV UL94-VO 10KHz T-13455 13455 T-13455

    13452

    Abstract: T-13452
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 Turns Ratio + 2% SCHEMATIC DIAGRAM 1CT : 2CT PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy Leakage Inductance 15 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD)


    Original     		PDF 41003/EN 700mV UL94-VO 10KHz T-13452 13452 T-13452

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8987B T1345 Power MOSFET http://onsemi.com –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • • ON-resistance RDS on 1=210mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1020pF(typ.) Protection diode in


    Original     		PDF EN8987B SFT1345 1020pF

    bt134

    Abstract: BT134-500D BT134g triac bt134 D8387 triac BT 06 400 triac BT 16 rating TTC 103 BT134F BT134 TRIAC
    Text: PHILIPS INTERNAT IO NAL b5E D • 711002b 00b2221 bTT H P H I N BT134 SERIES TRIACS Glass-passivated 4 Ampere triacs intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance with very low thermal


    OCR Scan     		PDF 711002b 00b2221 bt134-500 BT134G BT134 0b2530 BT134F BT134-500D triac bt134 D8387 triac BT 06 400 triac BT 16 rating TTC 103 BT134 TRIAC