Untitled
Abstract: No abstract text available
Text: Standard Models Fiber Units Amplifier Units Sensing method Appearance Model Model Appearance NPN output PNP output E3X-HD11 2M E3X-HD41 2M E E32-T11NF 2M Through-beam M8 E32-T11NF 5M E Oil-resistant Fiber Unit E32-T11NF Ratings and Specifications Model Item
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E3X-HD11
E3X-HD41
E32-T11NF
E32-T11NF
847-843-7900/Fax:
6835-3011/Fax:
21-5037-2222/Fax:
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E32-D11N
Abstract: E32-T11N E32-C31N E32-C11N E39-F1 E386-E1-01 omron
Text: NEW Fiber Unit Right-angle L-shaped Attachment Model E32-@@@N No Snagging No Breaking Convenient Mounting Feature 1 L-shaped Attachment E32-D11N No snagging during maintenance. Fiber flexibility prevents breaking. E32-T11N Feature 2 New Head Shape 10 mm*
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E32-D11N
E32-T11N
E386-E1-01
E32-D11N
E32-T11N
E32-C31N
E32-C11N
E39-F1
E386-E1-01
omron
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T08N
Abstract: UT01N t03n n21p UT03N n25p n20p AD8151 T09N N31P
Text: PRELIMINARY TECHNICAL DATA TM 33 x 17, 3.2Gb/s Digital Crosspoint Switch a s tre a m D 7 A 5 F irst Ran k 1 7 x 7 b it L a tc h Se co n d Ra n k 1 7 x 7 b it L a tc h Input Decoders RE INN CS Output Address Decoder FEATURES Low Cost 33 x 17, Fully Differential, Nonblocking Array
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AD8151
T08N
UT01N
t03n
n21p
UT03N
n25p
n20p
AD8151
T09N
N31P
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timing controller SHART
Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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K4U52324QE
512Mbit
32Bit
136Ball
timing controller SHART
T21N
K4U52324Q
SAMSUNG GDDR4
K4U52324QE-BC09
GDDR4
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K4J10324KE-HC1A
Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J10324KE
136FBGA
10tCK
10MAX
K4J10324KE-HC1A
K4J10324KE-HC14
T21N
K4J10324KE
k4j10324
K4J10324KE-HC12
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WL 系列
Abstract: No abstract text available
Text: TOKEN TRWL 貼片開放式繞線超薄高電流電感 貼片繞線電感 超薄高電流電感 產品簡介 德鍵電子生產的繞線貼片電感 - 採用高 共振頻率的陶瓷體線繞結構，超小體積 電感，可提供較高的 Q 值超薄型，
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350MHz
WL 系列
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MICRON gddr3
Abstract: GDDR3 SDRAM 256Mb gddr3 FBGA DDR3 x32 35w4 MT44H8M32F2FW-16 32x4 BA1T10 marking R810
Text: ADVANCE‡ 256Mb: x32 GDDR3 SDRAM GRAPHICS DDR3 SDRAM MT44H8M32 – 2 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • • • • • • • • • • • • • • • • •
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256Mb:
MT44H8M32
09005aef808f8a4f
MICRON gddr3
GDDR3 SDRAM 256Mb
gddr3
FBGA DDR3 x32
35w4
MT44H8M32F2FW-16
32x4
BA1T10
marking R810
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T103 0830
Abstract: t1n6 WL02 T WL05 WL05-T3N0 T22N 900 T3N6 WL02 Woofer 801 WL06
Text: Wire Wound Chip Inductor－WL Series Feature －Wire wound Ceramic Construction Provide High SRFs －Ultra-compact Inductors Provide Exceptional Q Values －Low profile , High Current are Available －Miniature SMD Chip Inductor for Fully Automated Assembly
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12hrs
T103 0830
t1n6
WL02 T
WL05
WL05-T3N0
T22N 900
T3N6
WL02
Woofer 801
WL06
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DDR2 x32
Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-GC12
K4J55323QF-GC14/16/20
DDR2 x32
GC14
K4J55323QF-GC
K4J55323QF-GC14
K4J55323QF-GC16
t8n 800
ELPIDA DDR User
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SQFP-48
Abstract: T6N 700 UCC5638
Text: SiP5638 New Product Vishay Siliconix 15-Line SCSI Bus Terminators D Pin Compatible with UCC5638 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5638
15-Line
UCC5638
SQFP-48
ULTRA-160)
ULTRA-320)
08-Apr-05
T6N 700
UCC5638
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T6N8
Abstract: No abstract text available
Text: WL Series Stackpole Electronics, Inc. Wirewound Ceramic Chip Inductor • • • • • • Features: Resistive Product Solutions WW on ceramic provides high SRFs Robust termination for outstanding mechanical strength Ultra compact inductors provide exceptional Q values
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350MHz
TH39N
50MHz
TH47N
TH56N
T6N8
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marking t1p
Abstract: SiP5668 SQFP-48 UCC5628 T5PH E2726 73099 T6N 700
Text: SiP5668 Vishay Siliconix 14-Line SCSI Bus Terminators DESCRIPTION FEATURES The SiP5668 provides active bus termination suitable for all SCSI bus operational modes from SCSI-1 through SPI-4 Ultra 320 . The termination includes impedance matching of the SCSI bus to minimize signal reflections from the end of
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SiP5668
14-Line
ULTRA-160)
ULTRA-320)
18-Jul-08
marking t1p
SQFP-48
UCC5628
T5PH
E2726
73099
T6N 700
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T6N 700
Abstract: SQFP-48 UCC5638
Text: SiP5638 Vishay Siliconix 15-Line SCSI Bus Terminators DESCRIPTION FEATURES The SiP5638 provides active bus termination suitable for all SCSI bus operational modes from SCSI-1 through SPI-4 Ultra 320 . The termination includes impedance matching of the SCSI bus to minimize signal reflections from the end of
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SiP5638
15-Line
ULTRA-160)
ULTRA-320)
18-Jul-08
T6N 700
SQFP-48
UCC5638
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SiP5678
Abstract: SQFP-48 UCC5638 T15N
Text: SiP5678 New Product Vishay Siliconix 15-Line SCSI Bus Terminators D Pin Compatible with UCC5638 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5678
15-Line
UCC5638
SQFP-48
ULTRA-160)
ULTRA-320)
S-41843--Rev.
11-Oct-04
UCC5638
T15N
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ST9035
Abstract: ST9030 b065n ST9036 D27C1
Text: rz7 SGS-THOMSON Ä 7 # IMSI3IB IS1ÆCTISI®IMII 58 ST9035 32K ROM HCMOS MCU WITH RAM AND A/D CONVERTER PRELIMINARY DATA • Register oriented 8/16 bit CORE with RUN, WFI and HALT/SLOW modes ■ Minimum instruction cycle tim e: 500ns (12MHz internal) ■ Internal Memory:
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ST9035
500ns
12MHz
80-pin
ST9035Q
68-lead
ST9035C
56-pin
ST9035B
ST9035
ST9030
b065n
ST9036
D27C1
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NSC810
Abstract: nsc810 i
Text: STANDARD MICROSYSTEMS CORPORATION, MPU 810A MPU 810A-1 MPU 810A-4 PRELIMINARY RAM-I/O-Timer FEATURES □ □ □ □ □ □ □ □ □ □ PIN CONFIGURATION Variable Power Supply: 2.4V-6.0V Pin-Compatible With NSC810 Three Programmable I/O Ports Two 16 Bit Programmable Counter Timers
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10A-1
10A-4
NSC810
MPU800
MPU800:
MPU810-4-4
MPU810
MPU810-1-1
PC5/T10UT
nsc810 i
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ST9030
Abstract: No abstract text available
Text: 30E » 7 ^ 2 3 7 0021700 SGS-THOMSON -4 V l ° | - S ^ ST90E30 ST90E31-ST90E32 G*[F!} ii,EgI[R]©[MQ g§ S fl • G S - T H 0 MS0 N ST9 8K EPROM HCMOS MICROCONTROLLER A D VA N C E DATA CO M PLETE M ICRO CO NTRO LLER, 8K BYTES O F EPROM, 256 BYTES O F REGISTER FILE
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ST90E30
ST90E31-ST90E32
8/16-BIT
16-BIT
ST9030
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SP20S
Abstract: No abstract text available
Text: Sipe* ^ Cofpor»lmn ▼ S P 2 0 0 /2 0 4 /2 0 5 /2 0 6 /2 0 7 /2 0 8 /2 1 1 /2 1 3 SIG N AL P R O C E S S IN G E X C E L L E N C E +5V High-Speed RS232 Transceivers with 0.1 pF Capacitors 0.1 pF External Charge Pump Capacitors 120Kbps Data Rate Standard SOIC and SSO P Packages
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RS232
120Kbps
SP200
28-pin
SP207BET.
SP211BET.
SP20S
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OP-07
Abstract: REF-03 SPT7814 d10eI
Text: SPT SIGNAL PROCESSING TECHNOLOGIES SP T7 8 I 4 10-BIT, 40 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • Monolithic 40 MSPS Converter On-Chip Track/Hold Bipolar ±2.0 V Analog Input 57 dB SNR @ 3.58 MHz Input
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SPT7814
10-BIT,
SPT7814
10-bit
a2823
OP-07
REF-03
d10eI
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Q01327
Abstract: 8051 midi wireless keyboard 8051
Text: GENERAL DESCRIPTION The FDC37C957FR incorporates an 8051 based keyboard controller; a Flash Interface; four PS/2 ports; real-time clock; SMC's true CMOS 765B FDC w ith advanced digital data separator and 16 byte data FIFO; tw o 16C550A compatible UARTs, the second UART
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FDC37C957FR
16C550A
Q01327
8051 midi
wireless keyboard 8051
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064x
Abstract: No abstract text available
Text: M Connectors • Housing Item M aterial Finish Housing PBT Light gray r ~i 35. 8 R etainer A s s e m b ly D ra w ing i_ I nt H IITOUI G T11-2P-H U <525 b p L. .J 36. 5 15. 1 Ul r* Ml Retainer Assem bly Diagram w \ ^- TOT *Jû l N
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T11-2P-H
GT11-2P-DS
064x
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st90t40c6
Abstract: microcontroller ST9036 ST9036 INA-12 ST9040 ST90E40 ST90R40 ST90T40 ST903
Text: Powered by ICminer.com Electronic-Library Service CopyRight 2003 TABLE OF CO NTENTS ST9040 . 1.1 GENERAL DESCRIPTION .
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ST9040
st90t40c6
microcontroller ST9036
ST9036
INA-12
ST90E40
ST90R40
ST90T40
ST903
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ST90R30C6
Abstract: ST90R30
Text: S C S -1H 0M S 0N - y ^ H .^ n ^ r p n LVbusi^LTJ^L5Lbiiav=5 iJ Lj ^ 'L u L ^ 'a _ ST90R30 ROMLESS HCMOS MCU WITH A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time:500ns 12MHz internal
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ST90R30
500ns
12MHz
PQFP80
80-pin
ST90R30Q
68-lead
ST90R30C
ST90R30
VR01996F
ST90R30C6
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION 16 x 16 1.5 GBIT/S DIFFERENTIAL CROSSPOINT SWITCH S2016 GENERAL DESCRIPTION FEATURES • 1 6 x 1 6 differential crosspoint switch • Full broadcast switching capability • Differential 10K PECL data path • Up to 1.5 Gbit/s NRZ data rate
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S2016
16x16
120-pin
S2016
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