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    T1 SL 100 NPN TRANSISTOR Search Results

    T1 SL 100 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    T1 SL 100 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SL 100 NPN Transistor

    Abstract: T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V
    Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-parallel Diode, Enhancing Reliability ●


    Original     		BULD25D, BULD25DR, BULD25SL SL 100 NPN Transistor T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V PDF

    D008

    Abstract: SL 100 NPN Transistor
    Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-parallel Diode, Enhancing Reliability •


    OCR Scan     		BULD25D, BULD25DR, BULD25SL D008 SL 100 NPN Transistor PDF

    SL 100 NPN Transistor

    Abstract: T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC
    Text: e TRANSYS BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE m CTKONICS LIM IT E D Designed Specifically for High Frequency Electronic Ballasts D PACKAGE TOP VIEW Integrated Fast trr Anti-parallel Diode, Enhancing Reliability B l= Diode trr Typically 500 ns


    OCR Scan     		BULD25D, BULD25DR, BULD25SL T0220 SL 100 NPN Transistor T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC PDF

    T1 SL 100 NPN Transistor

    Abstract: SL 100 NPN Transistor BULD50SL BULD50KC
    Text: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs


    Original     		BULD50KC, BULD50SL O-220 T1 SL 100 NPN Transistor SL 100 NPN Transistor BULD50SL BULD50KC PDF

    T1 SL 100 NPN Transistor

    Abstract: SL 100 NPN Transistor transistor BU 102
    Text: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE C o p y rig h t 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability FEBRUARY 1994 - REVISED SEPTEM BER 1997


    OCR Scan     		BULD50KC, BULD50SL T0220 T1 SL 100 NPN Transistor SL 100 NPN Transistor transistor BU 102 PDF

    itt 2222a

    Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
    Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min


    OCR Scan     		PZT2222A PZT2907A PZTA14 BSP52 ZTA14 PZTA64 ZTA64 PTZA42 TZA42 itt 2222a itt 2907A motorola diode cross reference PTZA92 2222a pinout 2907A bs33 zta96 PDF

    Untitled

    Abstract: No abstract text available
    Text: 599 FIBER SENSORS Light Curtain Type 2 SF2B SERIES Ver.2 Related Information •■General terms and conditions. F-17 Glossary of terms / General precautions.P.1359~ / P.1405 ■■Sensor selection guide.P.511~ ■■SF-C10. P.633~


    Original     		SF-C10. BSF4-AH80 PDF

    TOKO A 50 GTE

    Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
    Text: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■


    OCR Scan     		NR421 150mV 800KHz 100f/V/M 280JUV/M 10KHz: -28dB 15KHz TOKO A 50 GTE 88-108 rf amplifier TO82 TRANSISTOR PDF

    S15K

    Abstract: 251C Z51C 3N50 sbsb 2sc1576
    Text: SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR IS61BŒ O ¿'/B o urn o Pow er R e g u l a t o r a n d H i g h V o l t a g e INDUSTRIAL APPLICATIONS Sw itch in g A pp li c a t i o n s •  StŒ T -f : tiifOWE.jPi&'s* vc b o = 4 5 0 ; V c E e a t = l-SV Max.


    OCR Scan     		2sc1576 0X20X2W 10X10X2Â S15K 251C Z51C 3N50 sbsb 2sc1576 PDF

    xo 405 mf

    Abstract: piezo bz1 3BZ1 5. buzzer alarm
    Text: JT9626-AS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic JT9626-AS LSI for LCD Watches This product is a single-chip CMOS LSI for watches with alarm and chronograph functions. It can directly drive a six-digit LCD and offers six functions. Applications


    Original     		JT9626-AS 12-hour 24-hour xo 405 mf piezo bz1 3BZ1 5. buzzer alarm PDF

    transistor 1211

    Abstract: circuit diagram for buzzer circuits block diagram of digital watches JT9626-AS 5. buzzer alarm
    Text: JT9626-AS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic JT9626-AS LSI for LCD Watches This product is a single-chip CMOS LSI for watches with alarm and chronograph functions. It can directly drive a six-digit LCD and offers six functions. Applications


    Original     		JT9626-AS 12-hour 24-hour transistor 1211 circuit diagram for buzzer circuits block diagram of digital watches JT9626-AS 5. buzzer alarm PDF

    NR421

    Abstract: No abstract text available
    Text: SAC D I bSD1130 ODBSbGi 4 NATL SEPIICON] {DISCRETE} 6 5 0 1 1 3 0 N A TL S E M I C O N D , Z 28C D I S C R E T E ) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features 1 | package and lead coding ■ 0.65pF typical feedback capacitance for excellent


    OCR Scan     		bSD1130 NR421 150mV 10tyW/M 280//V/M 10KHz: 15KHz 800KHz PDF

    marking code AD

    Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
    Text: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		FMMT2369A OT-23 Curre00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C marking code AD transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 PDF

    m3d l3

    Abstract: GP3Y
    Text: T O SH IB A TB6508F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB6508F CYLINDER MOTOR CONTROL DRIVER 1C FOR VTR MOVIE The TB6508F is a 3 Phase, Low Noise, Low Voltage, Sensorless Motor Control 1C for VTR Movie. The Outputs 10mA Max. drive external PNP/NPN Power


    OCR Scan     		TB6508F TB6508F QFP-48) 961001EBA2 500kHz 2SA1012 LQFP48-P-0707-0 m3d l3 GP3Y PDF

    pj 3059

    Abstract: No abstract text available
    Text: TOSHIBA JT9626-AS JT9626-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC LSI FOR LCD W ATCHES This product is a single-chip CMOS LSI for watches with alarm and chronograph functions. It can directly drive a six-digit LCD and offers six functions.


    OCR Scan     		JT9626-AS 768kHz, pj 3059 PDF

    T1 SL 100 NPN Transistor

    Abstract: T1.18-3 BZ BUZZER PIEZO JT9626-AS digital lcd stopwatch transistor top mark 3f piezo bz1 transistor 1211 BZ1F
    Text: TOSHIBA JT9626-AS JT9626-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC LSI FOR LCD WATCHES This product is a single-chip CMOS LSI for watches with alarm and chronograph functions. It can directly drive a six-digit LCD and offers six functions.


    OCR Scan     		JT9626-AS 1/10Oscillator 768kHz, T1 SL 100 NPN Transistor T1.18-3 BZ BUZZER PIEZO JT9626-AS digital lcd stopwatch transistor top mark 3f piezo bz1 transistor 1211 BZ1F PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		2SC3666 PDF

    c237p

    Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r


    OCR Scan     		PDF

    piezo bz1

    Abstract: JT9626-AS
    Text: TOSHIBA JT9626-AS TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC JT9626-AS LSI FOR LCD W ATCHES This product is a single-chip CMOS LSI for watches w ith alarm and chronograph functions. It can directly drive a six-digit LCD and offers six functions.


    OCR Scan     		JT9626-AS 1/100instruments, piezo bz1 JT9626-AS PDF

    SNC735

    Abstract: SNC710 SNC700 sonix
    Text: SNC7x5/SNC710 PROGRAMMING GUIDE SONiX 7x5 / 710 ASSEMBLER USER’S MANUAL General Release Specification SONiX 16-Bit DSP Development Tools SONIX reserves the right to make change without further notice to any products herein to improve reliability, function or design.


    Original     		SNC7x5/SNC710 16-Bit SNC735 SNC710 SNC700 sonix PDF

    bd135 equivalent

    Abstract: VARIABLE capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line UHF P o w er T ransistor The TP3012 is designed fo r 900 MHz m o b ile stations in b oth analog and d ig ita l a p p li­ cations. It in co rp o rates high value e m itte r ballast resistors, gold m e ta llizatio n s and offers


    OCR Scan     		TP3012 TP3012 1N4148 bd135 equivalent VARIABLE capacitor PDF

    SL550

    Abstract: SL5500 SL5501 SOT-90B 340 opto isolator SL5511
    Text: SL5500 SL5501 SL5511 OPTOCOUPLERS Optically coupled isolators consisting o f an infrared em itting GaAs diode and a silicon npn photo­ transistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • High o u tpu t/in pu t DC current transfer ratio


    OCR Scan     		SL5500 SL5501 SL5511 SL5501. SL5500. SL55t1. SL550 SL5500 SL5501 SOT-90B 340 opto isolator SL5511 PDF

    RELAY RM2 TR1

    Abstract: SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6
    Text: Bill of Materials T-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32


    Original     		T23A230 Q69-X8743 VAC5024-X006 SMD08 N5024-X006 SMD0805 22nF/50V, SMD0805; 100nF/50V, B45196-E122. RELAY RM2 TR1 SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6 PDF

    capacitor 100N 63V 2u2

    Abstract: capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt
    Text: Bill of Materials Q-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32


    Original     		T23A230 Q69-X8743 VAC5024-X006 SMD08 N5024-X006 SMD0805 22nF/50V, SMD0805; 100nF/50V, B45196-E122. capacitor 100N 63V 2u2 capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt PDF