Untitled
Abstract: No abstract text available
Text: LM3671 LM3671Q www.ti.com SNVS294Q – NOVEMBER 2004 – REVISED NOVEMBER 2013 LM3671, LM3671Q 2MHz, 600mA Step-Down DC-DC Converter Check for Samples: LM3671, LM3671Q FEATURES APPLICATIONS • • • • • • • • • • • • • 1 2 • • •
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LM3671
LM3671Q
SNVS294Q
LM3671,
LM3671Q
600mA
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BIOS example source code
Abstract: 28 DSP/BIOS PC BIOS SPRA591 TMS320C6000 0x01840030
Text: Application Report SPRA591 - January 2000 DSP/BIOS by Degrees: Using DSP/BIOS Features in an Existing Application Thom Maughan, Kathryn Rafac Texas Instruments Incorporated ABSTRACT DSP/BIOSt provides a complete set of instrumented kernel services optimized for fast
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SPRA591
BIOS example source code
28 DSP/BIOS
PC BIOS
TMS320C6000
0x01840030
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MSI super Q diodes
Abstract: No abstract text available
Text: MSI ELECTRONICS INC 3SE D E3 SbSbMbb 00003^0 1 E M S I UHF/VHF ABRUPT TUNING DIODES SUPER Q @ electronics m e SER IES 1N 5 6 8 1A -1 N 5 695 A 1N 5 6 9 8A -1 N 5 710 A . . . . with capacitance tuning ratios usable over most of their operating bias voltage range • and readily matched in groups, the diodes featured here
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Untitled
Abstract: No abstract text available
Text: M S I SbSbMbb OODD41D llfl 4flE D ELECTRONICS INC R f l S O MSI GA-2/92 Series OA3120-QA3930 GA4120-GA4630 QA5120-QA5530 QA6120-SA6530 CONTROLLED GAMMA TUNING DIODES electronics i. T h e c a p a c i t a n c e v o l t a g e exponent, y ,is s p e c i f i e d for a p r e s c r i b e d
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OODD41D
GA-2/92
OA3120-QA3930
GA4120-GA4630
QA5120-QA5530
QA6120-SA6530
GA6130
GA6120
GA6220
GA6230
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Untitled
Abstract: No abstract text available
Text: M S I ELECTRONICS INC e le c tro n lc e m e 3SE D SbSbMbb 0000333 3 El MSI T'07-f^ m HYPERABRUPT U H F /V H F TU N IN G DIODES DHA6520. A, B, C, D thru DHA6525, A, B, C, D CATHODE The controlled C -V characteristics of this hyperabrupt tuning diode series
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DHA6520.
DHA6525,
IL-S-19500
DHA6524A
DHA6523A
6522B
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Untitled
Abstract: No abstract text available
Text: Low Saturation Voltage Switching Transistors LSV series Bipolar transistors SBSBO E -pack SMD VcEO V cbo V cEO V ebo le IVI IVI IVI -60 -40 -7 1 E-pack (Lead type) Electrical Characteristics Absolute Maximum Ratings Type No. , Ib Pt Tstg Tj (sus) (min) i AS
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2SA1795
2SA1796
2SA1878
2SA1879
2SA1880
2SC4981
ITO-220
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15EDGRM-THT-3
Abstract: 15EDGR
Text: A ¡a . « te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON *t st a *&« *? t f n# <& V « « SBSbA « 1 •I 5 E D G R M - T H T - 3 . 5 1 5 E D G R M - T H T - 3 . 8 1 I aII * I m ik mm 300V 8A 20m fi 5000M Ü/DC1000V AC2000V/1 Min ¡^ fe E E : ÉË » fe PI
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15EDGRM-THT-3
UL94V-0
5000M
AC2000V/1
12000V/1
15EDGR
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Untitled
Abstract: No abstract text available
Text: n S I ELECTRONICS INC 3SE J> S8 -2/90 EB SbSbMbb 00003=14 R BIMSI S TR IP LIN E PA C K A G ED SERIES 1S800 • 1S809 electronics. 2C800 - 2C809 H Y P E R A B R U P T T U N IN G D IO D E S With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800
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1S800
1S809
2C800
2C809
1S800
2C800
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HFD3805
Abstract: HFE4814 HFE4848 hfd3801 HFD3882 HFD3881 HFD3850 hfe4811 HFE4807 HFD3886
Text: l-IO N F Y IilF L L I N C / h u n e y W e il MICRO 55E D • 4 5 S l f l 3 D OOl SbSb *iZ3 ■ HON1 c o n n e c t o r iz e d cuMKuiNtiN i o T -H i-< r>7 SMA Low-Profile Style SMA-LP LEDs and Integrated Transmitters The SMA-LP devices consist of a Base Part mounted in a Metal SMA Low Profile style connector. LEDs and integrated
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HFE4814
HFE4821
HFE4825
HFE4848
HFE4855
HFE4857
HFE4860
HFD3875-002
HFD3805
hfd3801
HFD3882
HFD3881
HFD3850
hfe4811
HFE4807
HFD3886
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A91A
Abstract: msi electronics MSI super Q diodes 1N5689A 1N5707A 5684A
Text: M S I ELECTRONICS I NC 3SE D E3 SbSbMhb 1 BE MSI " p 0 7 - j UHF/VHF ABRUPT TUNING DIODES SUPER Q e le c t r o n ic s , 00003=10 S E R IE S 1N5681A-1N5695A 1N5698A-1N571OA . . . . w ith capacitance tuning ratios usable over most of their operating bias voltage range • and readily matched in groups, the diodes featured here
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1N5681A-1N5695A
1N5698A-1NS71
175UC
DO-14
1N5688A
1N5689A
1N5690A
1N5691A
1N5692A
1N5693A
A91A
msi electronics
MSI super Q diodes
1N5707A
5684A
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MV1406
Abstract: MV1401-MV1412 MV1401 MV1402 MV1403 MV1404 MV1405 MV1407 MSI Electronics "MSI Electronics
Text: M S I ~ 0 ~? E LE CTRONICS INC 10E D | SbSbMbb D0D03SÔ S | MORE HYPERABRUPT TUNING DIODES electronics The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of nominal capacitance are for AM applications with the lower capacitance
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0DD035Ã
MV1401-MV1412
MV1401*
DO-14
MV1402
MV1403
MV1404
MV1405
MV1406
MV1401-MV1412
MV1401
MV1407
MSI Electronics
"MSI Electronics
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6525A
Abstract: 6522A DHA6520 DHA6523A DHA6525 msi electronics "MSI Electronics
Text: M S I ELECTRONICS INC 3SE D m SbSbMbb Ü0003ÔÔ 3 EiMSI T'07-f^ HYPERABRUPT U H F /V H F T U N IN G DIODES electrónica DHA6520. A, B, C, D thru DHA6525, A, B, C, D CATHODE T he c o n tro lle d C - V characteristics o f this h y p e ra b ru p t tu n in g d io d e series
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DHA6520,
DHA6525,
DHA6520
DHA6525
MIL-S-19500
6523B
6523C
6523D
DHA6524A
6524B
6525A
6522A
DHA6523A
msi electronics
"MSI Electronics
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Untitled
Abstract: No abstract text available
Text: M S I •f ^ q -j ~/ f ELECTRONICS INC 1QE 0 | SbSb4bb D0D03Sfi S | DtfDSD MORE HYPERABRUPT TUNING DIODES electronics m e. The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of
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D0D03Sfi
nitsV1407
V1408
V1409
V1410
V1411
V1412
MV1401
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ZC800
Abstract: ZC700 ZC898 ZC899 ZC800-ZC899
Text: M S I ELECTRONICS INC ES 3SE D SbSb4bb 00D03Û4 b E3MSI ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES e l o c t r o n O c B /ne S E R IE S ZC700-ZC714, B, C, ZC800-ZC899, A, B. The a b ru p t Z C 7 0 0 and h y p e ra b ru p t Z C 8 0 0 series tu n in g diod es to g e th e r o ffe r a selection
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00D03Ã
ZC700-ZC714,
ZC800-ZC899,
ZC700
ZC800
MIL-S-19500.
ZC898
ZC899
ZC800-ZC899
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GA5230
Abstract: GA3120 GA3220 GA3320 GA3420 GA3530 axial DIODE 517 ga 39 diode GA432 QA31
Text: S I ELECTRONICS INC 4ÖE D • SbSbMbb OODD41D Hfl « M S I GA-2/92 Serles OA3120-QA3930 0A4120-QA4630 0Ä5120-QA5530 QA6120-SA6530 CONTROLLED GAMMA TUNING DIODES R ÍD SO electronics« The capacitance voltage exponent, y ,ia specified for a prescribed voltage range in the GA series tuning diode to facilitate uses in
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OODD41D
GA-2/92
QA3120-OA3930
QA4120-QA4630
5120-QA5530
GA6120-GA6530
GA3530,
rat53/1
GA6130
GA6230
GA5230
GA3120
GA3220
GA3320
GA3420
GA3530
axial DIODE 517
ga 39 diode
GA432
QA31
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Untitled
Abstract: No abstract text available
Text: M SI BSE D ELECTRONICS INC electronics E3 SbSbMbb □□□□363 4 B3MSI MORE HYPERABRUPT TUNING DIODES me The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of nominal capacitance are for A M applications with the lower capacitance
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MV1401-MV1412
V1410
V1411
MV1412
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Untitled
Abstract: No abstract text available
Text: n S I ELECTRONICS INC bOE D SbSb4bb 0000415 7TT BB MSI 'P07'/c SOT-23 PACKAGED VARACTORS FOR LOW VOLTAGE, WIDE-BAND TUNING electronics With a capacitance tuning ratio greater than 5s1 for a reverse bias swing from 0.2 to 6 volts, the MSI ZB600^varactor diode series covers an octave
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OT-23
ZB600
EIA-481
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T-0.4
Abstract: No abstract text available
Text: po“,P "/aa^ “ /liöH*P/»IW/P* Kw»/««l/ SBSBE3“ BÉ'BO'ÇL 9 N I M V id d d 3 k l0 1 S D 0 Ai- H-Ud-SO" MIS DRAtflWÔ IS UNPUBLISHED. ftEVtSIÛNS L SEE SKEET 1 OF 2 A A A A A D IM E N S IO N O PPO S ITE A P P L IE S ARE S ID E AT LO CATED OF BASE
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10/23/S2
13ij0
T-0.4
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G603A
Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Text: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted
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000036b
T-07-19
C2/C20
C2/C30
C4/C25
SQ1213A
G702A
SQ1214A
G603A
S0171
DIODE 1N54
HA1930A
1N547S
10YD
1N5470A
G605A
GDE 6A
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2C800
Abstract: stripline 2c806 2C809 2C805 1S800 1S801 1S809 2C802 2C DIODE
Text: M S I ELECTRONICS INC 35E D ES SbSbMbb 0 G 0 0 3 lìLl ì Mi M S I STRIPLINE PACKAGED electronics. HYPERABRUPT TU N IN G DIODES With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800 series hyperabrupt diodes in stripline packages are especially suitable for
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1S800
1S809
2C800
2C809
1S800
environmenC808
2C809
stripline
2c806
2C805
1S801
2C802
2C DIODE
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4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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Untitled
Abstract: No abstract text available
Text: R /2 R Ladder Sm all Outline Surface M ount .2 2 0 " D ual In-Line Thick Film Resistor N etw ork ELECTRICAL Standard Resistance Range, Ohms 1K to 100K ±2% Standard Resistance Tolerance, at 25°C Operating Temperature Range 0°C to 70°C Temperature Coefficient of Resistance
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t100ppm/
057mm)
MIL-R-914
25K/50K
50K/100K
100K/200K
10K/20K
EIA-481
330mm)
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Untitled
Abstract: No abstract text available
Text: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS
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000036b
C2/C20
G702A
SQ1214A
G603A
SQ1714
SQ1715
SQ1216A
C20/pf
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Untitled
Abstract: No abstract text available
Text: W B@ ML SERIES LED PUSH BUTTON SWITCH Feature bi-color LED illuminated available 2P2T, 4P2T, lock l non-lock function Application computer products instrumentation communication equipments ► SPECIFICATIONS SWITCH SPECIFICATIONS LED SPECIFICATIONS 2 P 2 T .4 P 2 T
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00000000S0
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