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    T07 TRANSISTOR Search Results

    T07 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T07 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SLA6023 application

    Abstract: SLA6024 SLA5065 SLA5064 SLA5060 application SLA5073 SLA6026 SLA5013 SLA5031 pnp DARLINGTON TRANSISTOR ARRAY
    Text: Bulletin No T07 EB0 Mar.,2001 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the


    Original     		H1-T07EB0-0103020ND SLA6023 application SLA6024 SLA5065 SLA5064 SLA5060 application SLA5073 SLA6026 SLA5013 SLA5031 pnp DARLINGTON TRANSISTOR ARRAY PDF

    sma4033

    Abstract: transistor SMD t07 SLA6022 sla6024 circuit STA471A SLA4070 toshiba semiconductor catalog SLA5007 DARLINGTON TRANSISTOR ARRAY P-channel 200V mos fet
    Text: Bulletin No T07 EA0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the


    Original     		responsib82-2-714-3700 H1-T07EA0-9909020ND sma4033 transistor SMD t07 SLA6022 sla6024 circuit STA471A SLA4070 toshiba semiconductor catalog SLA5007 DARLINGTON TRANSISTOR ARRAY P-channel 200V mos fet PDF

    Untitled

    Abstract: No abstract text available
    Text: QST7 Transistors Low frequency amplifier QST7 !External dimensions Units : mm !Application Low frequency amplifier Driver 2.8 0.85 2.9 (3) (2) 0.16 0.4 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) (5) (6)


    Original     		-370mV -50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: US6T7 Transistors Low frequency amplifier US6T7 6 (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. 0.3 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) 0.65 0.65 !External dimensions (Unit : mm)


    Original     		-370mV -50mA 15Max. PDF

    germanium af transistors

    Abstract: OC171 OC170 AF126 AF124 germanium transistors PNP AF114 AF127 AF125 603F
    Text: PNP Germanium Transistors PNP Germanium V H F Diffused Transistors in T 0 7 and T 0 7 2 metal cases Type C h aracte ristics @ 2 5 ° C M a x im u m ratings Cai se V BV£B O V 'c m mA b v cbo 114 115 116 117 124 125 126 127 T07 T07 TO 7 T072 T072 T072 T072


    OCR Scan     		OC170 OC171 110mA/1mA) germanium af transistors AF126 AF124 germanium transistors PNP AF114 AF127 AF125 603F PDF

    AJB-4

    Abstract: BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l E3122
    Text: SIEM ENS ñ23SbüS 00*12701 T07 H PROFET BTS 432 12 Smart Highside Power Switch Product Summary Features * * * * * * * * * * * * Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output Vbb- V buT Avalanche Short-circuit protection


    OCR Scan     		235b05 TQ-220AB/5 Q67060-S6204-A2 O-22QAB/5, E3122 I2E3122A Q67060-S6204-A3 023SbGS AJB-4 BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l PDF

    t07 transistor smd

    Abstract: smd transistor 2T6 SMD Transistor t07
    Text: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •


    OCR Scan     		flE35b05 00fll430 BTS410E2 fl23Sb05 O-220AB/5 410E2 O-22QAB/5, E3043 Q67060-S6102-A2 410E2 t07 transistor smd smd transistor 2T6 SMD Transistor t07 PDF

    t07 transistor

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile


    OCR Scan     		bbS3T31 BLU30/28 BLU30/28 OT119) t07 transistor PDF

    transistor SMD t07

    Abstract: SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2
    Text: • flE35b05 OOfllMBO T07 ■ SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •


    OCR Scan     		flE35b05 BTS410E2 023Sb05 TQ-220AB/5 Q67060-S6102-A2 CPI05t6S O-22QAB/5, E3043 E3043 Q67060-S6102-A3 transistor SMD t07 SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2 PDF

    BC817

    Abstract: bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
    Text: 23Ö33TM □□□□73 4 T07 • BC817 BC818 DÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P—N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m


    OCR Scan     		BC817 BC818 BC817 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    2N725

    Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. B170024 4000n 2N725 L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803 PDF

    2SA143

    Abstract: CK676 CK14A 2SA17 2N371 2N544 ck17a 2N370/33 2N544/33 2SA13
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		2SA133 2SA364 2SA80 2SA82 2SA85 2SA131 2SA365 2SA369 2SA306 2SA143 CK676 CK14A 2SA17 2N371 2N544 ck17a 2N370/33 2N544/33 2SA13 PDF

    2SK19Y

    Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 2SK19Y C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684 PDF

    transistor 2sA144

    Abstract: 2SA234 2SA144 2SA235 TRANSISTOR r73 2N2672 2SA135 2N1516 2N2654 dm-58
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		B170024 4000n transistor 2sA144 2SA234 2SA144 2SA235 TRANSISTOR r73 2N2672 2SA135 2N1516 2N2654 dm-58 PDF

    2SA143

    Abstract: transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2SA143 transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465 PDF

    2SA143

    Abstract: 2SA94 transistor 2sa143 2N1673 2N370 MT14 ck17a 2N372/33 2SA80 2V464
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2SA143 2SA94 transistor 2sa143 2N1673 2N370 MT14 ck17a 2N372/33 2SA80 2V464 PDF

    2SA94

    Abstract: 2SA143 2N1673 2g396 2SA297 2SA80 2V464 2V465 2V482 CK13
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol


    OCR Scan     		buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2SA94 2SA143 2N1673 2g396 2SA297 2SA80 2V464 2V465 2V482 CK13 PDF

    GM300

    Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 GM300 CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn PDF

    transistor t07

    Abstract: t07 transistor
    Text: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R-|=4.7kil _GL ET Ordering Code Pin Configuration XKs UPON INQUIRY 1 =B Package II CO O Marking BCR 519 LU II CVJ


    OCR Scan     		OT-23 53SbQS transistor t07 t07 transistor PDF

    transistor t07

    Abstract: Transistor B 886 t07 transistor PDTA144 PDTA144E
    Text: Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA144EU FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ii each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS


    OCR Scan     		PDTA144EU OT323) OT323 PDTC144EU. PDTA144EU transistor t07 Transistor B 886 t07 transistor PDTA144 PDTA144E PDF

    MA117

    Abstract: NKT275 NKT275A TS-601 2SA250 2SB495 AF107 GET114 GET538 XC101
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		B170024 4000n MA117 NKT275 NKT275A TS-601 2SA250 2SB495 AF107 GET114 GET538 XC101 PDF

    2G417

    Abstract: 2SB135 TK27A 2sb115 AFY15 OC3H TI-363 324T1 TK21A 2N199
    Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol


    OCR Scan     		ti444 TI443 AF121S 270MI 2SA310 650MS ASY14-1 25Om0 2G417 2SB135 TK27A 2sb115 AFY15 OC3H TI-363 324T1 TK21A 2N199 PDF

    A21E

    Abstract: ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 Q62702-F1104 transistor ZO 103 MA
    Text: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in a n te n n a an d te le c o m m u n ic a tio n s svstem s to 2 G H z ud at collector currents from 10 mA to 70 mA. / - \ • Hermetically sealed ceramic package.


    OCR Scan     		Q62702-F1104 A21E ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 transistor ZO 103 MA PDF