AGE Module
Abstract: No abstract text available
Text: MilitaryAerospace Division Military-Aerospace Division PowerM OS IV herm etic M O SFET s BVdss V R d s(O N ) lD(C on t) (/> ) PD (W ) ^is^(pF) Q g(nC ) P ack age Flat pack (FN) T02S8 (HN ) T0254 (CN) Pow er m od ules for high rei applications Sem elab’s 4th Generation M O SFE T s, bipolar
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T02S8
T0254
T0257
AGE Module
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U3158
Abstract: stanag LISTING 4093 N JANTXV 2N2880 equivalent
Text: MîlitaryAerospace Division Military-Aerospace Division introduction and quality approvals jÊÈÈÊÊDim*, T02S8 Since its e s ta b lis h m e n t as a m anufacturer, Sem elab has specialised in the fabrication of very high quality products especially intended
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IRFY9120
Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
Text: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFV460
IRFY044IM)
O-257AA
IRFY120
IRFY130
IRFY140
IRFY240
IRFY340
IRFY430
IRFY440
IRFY9120
diode ED 84
660B
IRFV460
ISFV460D
TO-257AB
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