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    2SC3365 -TO3

    Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
    Text: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.


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    GD1377Ã 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC3365 -TO3 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 PDF

    2SK1275

    Abstract: D0135
    Text: MMTbSGS Q0132Ö4 7Tb • H I T 4 2SK1275SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES # Low On-Resistance # High Speed Switching 1. # Low Drive Current # No Secondary Breakdown # Suitable for Switching Regulator and Gate 2. D ra in 3. Source


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    Q0132Ã T0-220FM) Tc-25 2SK1275 D0135 PDF

    2SK1778

    Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


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    303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042 PDF

    2SD2103

    Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
    Text: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119


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    2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2112 T0-220FM) 2SD2103 TO220FM 2SD2102 2sd209 2SD2109 STC 100u SC-63 2SD2093 PDF

    2SD2334

    Abstract: 2SD2350 2SD2333 2SD2328 2SD2363 ZSD2361 2SD2312 2SD2331 2SD2323 2SD2294
    Text: Ta=25'C, *Ef](iTc=25'C m z tt & 2SD2294 H i H out 2SD2295 S i H out 2SD2296 H i H out 2SD2297 H i H out 2SD2298 0i H out 2SD2299 H i H out Vc b o Vc e o (V) (V) 1500 1500 1500 p * '• (A) 800 800 800 1 Di ^ *. aBU ink) m (W) I M ^ 14 (Ta=25‘ C) [*EP(átyjH¡S3


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    2SD2294 2SD2295 2SD2296 2SD2297 2SD2298 2SD2299 2SD2300 2SD2301 2SD23U 2SD2312 2SD2334 2SD2350 2SD2333 2SD2328 2SD2363 ZSD2361 2SD2331 2SD2323 2SD2294 PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A


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    6AM12 2SK970 T0-220AB) 2SK1093 T0-220FM) 2SJ172 TQ-220AB) 2SJ175 TQ-220FM) PDF

    2sk1299

    Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
    Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m


    OCR Scan
    303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001 PDF

    2SK1778

    Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094 PDF

    2SK1778

    Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 PDF

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


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    2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44 PDF

    5252 F 1108

    Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
    Text: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92


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    O-126M 12IFP-8DA 24Sfc 2025R 2026R 2027R 2029R 2031T 5252 F 1108 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i 2 0.17 Vi, V GS = 10 V, ID= 4 A P-channel: RDS(o1i) 2 0.2 1/ 2, V GS = -1 0 V, ID= -A A


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    4AM14 2SK970 T0-220A 2SK1093 T0-220FM 2SJ172 O-220AB) 2SJ175 TQ-220FM) PDF

    2SB1370

    Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
    Text: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40


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    2SB1369 2SB1370 2SB1371 2SB1372 2SB1373 2SB1375 2SB1376 61393A 09K/0. 2SD2099 2SB1370 2sd2083 2sb1383 2SD2012 2SB1375 PDF

    Hitachi PF0030

    Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


    OCR Scan
    303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I Hitachi PF0030 25K1772 2sk1299 2SJ295 PF0042 2SJ299 2sk1205 PDF

    PF0040

    Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
    Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices


    OCR Scan
    2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919 PDF

    12W 04 SMD MOSFET

    Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
    Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers


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    NMT90Q/TACS PF0010 2SJ291 220AB 2SJ192 2SJ293 220FM 2SJ294 2SJ29S 2SJ296 12W 04 SMD MOSFET PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PDF

    2SK2225 equivalent

    Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}


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    2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-156B<Z HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 2 Nov. 1994 Pin Arrangement • Low forward voltage drop. VF=0.55V max) • High reverse voltage. (VR=40V max) • Full molded fin enables easy insulation from


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    HRW26F HRW26F T0220FM O-220FM PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5206 Silicon NPN Triple Diffused HITACHI A pplication High pow er switching Features • High breakdown voltage V cbo = 5 0 0 V • Isolated package T0-220FM O utline TO-22QFM I < i 3 2 Collector 3 Emitter 2SC5206 A bsolute M axim um R atings Ta = 25°C


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    2SC5206 T0-220FM O-22QFM PDF

    2sj177

    Abstract: 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices


    OCR Scan
    2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290 PDF

    2sj217

    Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m


    OCR Scan
    303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sj217 pf0030 hitachi 2SJ295 2SK1919 PF0042 2SJ214 2SJ220 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5206 Silicon NPN Triple Diffused HITACHI Application High power switching Features • High breakdown voltage • VCB0 = 500 V Isolated package T0-220FM Outline TO-22QFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5206 Absolute Maximum Ratings Ta = 25 °C


    OCR Scan
    2SC5206 T0-220FM O-22QFM D-85622 PDF

    2sc5083

    Abstract: pine alpha st-100s arakawa chemical 2SC4044S 2SC1740S 2SC1809S 2SC401 ROHM FTL 2SC2058S 2SC2926S 2SC4010
    Text: E x c e lle n c e in E le c tr o n ic s T t \ RBHffl RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR LEAD TYPE TRANSISTOR LEAD FREE Sn-3Ag-0.5Cu VERSION CONTENTS REV. : C RECOMMENDABLE CONDITION OF SOLDERING DIP 2 /3 RECOMMENDABLE CONDITION OF HAND SOLDERING


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    ST-100S 28kHz 2sc5083 pine alpha st-100s arakawa chemical 2SC4044S 2SC1740S 2SC1809S 2SC401 ROHM FTL 2SC2058S 2SC2926S 2SC4010 PDF