2SK1011
Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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OCR Scan
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2SK1221-01
T0220
2SK1917-01M
T0220F15
2SK1007-01
2SK1009-01
2SK1011-01
2SK1101-01M
2SK1011
2SK1013-01
2SK1222-01
2sk1211
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2SK955
Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A
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OCR Scan
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DDDlfl70
2SK1134
T03PF
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK955
2SK899
2SK2001
2SK1660
2SK725
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2sk1507
Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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OCR Scan
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PDF
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2SK1221-01
T0220
2SK1917-01M
T0220F15
2SK1007-01
2SK1009-01
2SK1011-01
2SK1101-01M
2sk1507
2SK1018-01
2sk1018
2SK1820-01
2SK956
2SK1013-01
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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era-84
Abstract: 104C smd ERE81-004
Text: —K / Rectifier Diodes m -it i/yjil Schottky-Barrier Diodes SBD 1 in one-package 1 Ä Device type SMD i'tiSno Maximum rating Viww *1 If i a v ) ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 ERB83-006 ERB81-004
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OCR Scan
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ERA82-004
SC802-04
SC802-06
SC802-09
ERA83-004
ERA83-006
ERA81-004
ERA84-009
ERA85-009
ERB83-004
era-84
104C smd
ERE81-004
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Untitled
Abstract: No abstract text available
Text: a /\°7 -MOSFET / Power MOSFETs FAP-IIIA '> 'J ~ X FAP-IIIA series iS iS Ä rH m • 1&J- m j Device type High surge ruggedness Voss to pulse * ’ Rds Amps. Volts ms 20 80 0.07 35 ±20 1.5 TO-220F15 60 40 160 0.03 40 ±20 1.5 TO-220F15 2.3 60 40 160 0.03
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OCR Scan
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O-220F15
2SK1822-01
2SK2259-01MR
2SK2165-01
2SK2166-01R
2SK1969-01
2SK1823-01R
F8006N
F7007N
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2SK2079-01M
Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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2SK905
2SK906
2SK900
T0220
2SK947M
T0220F15
2SK901
2SK1549
T03PF
2SK902
2SK2079-01M
2SK2079
2SK2001-01M
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2SK1083MR
Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
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OCR Scan
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PDF
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2SK1505MR
T0220F15
2SK2048L
2SK1388
T0-220
2SK1083MR
T0-220F15
2SK1096MR
2SK1086MR
2SK1387MR
2SK1881L
2sk1506
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2SK1012
Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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OCR Scan
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PDF
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2SK1221-01
T0220
2SK1917-01M
T0220F15
2SK1007-01
2SK1009-01
2SK1011-01
2SK1101-01M
2SK1012
2SK1015
2SK1018-01
2SK1082
2SK1211
2SK1545
2sk1018
2SK1081-01
2SK1102
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Untitled
Abstract: No abstract text available
Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01
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OCR Scan
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PDF
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2SK1006-01M
2SK1007-01
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
2SK1916-01
2SK1017-01
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01
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2SK2518-01MR
2SK2250-01L
2SK22S1-01
2SK2292-01L
2SK2099-01
2SK2253-01MR
2SK22S2-01L
2SK22S5-01MR
2SK2254-01L
2SK2256-01
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2SK1937
Abstract: No abstract text available
Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass
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OCR Scan
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2SK2518-01MR
2SK2918-01MR
2SK2251-01
T0-220F15
O-220AB
O-220F15
2SK1937
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Untitled
Abstract: No abstract text available
Text: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04
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OCR Scan
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1c-79
c-85C
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2SK2079
Abstract: 2SK2079-01M
Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK1549
2SK902
2SK949M
2SK950
2SK724
2SK2079
2SK2079-01M
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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OCR Scan
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PDF
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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PDF
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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TO-220F15
Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
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OCR Scan
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PDF
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2SK1505MR
O-220F15
2SK2048L
2SK1388
O-220
2SK1083MR
2SK1096MR
2SK1086MR
TO-220F15
2630
2SK2248-01L
2SK1387MR
2SK1508
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65A2
Abstract: No abstract text available
Text: F U JI Qi'iLlMsuUÜUG 2SK2638-01 MR N-channel MOS-FET 450V 0,65£2 10A 50W FAP-IIS Series > Features - Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Repetitive Avalanche Rated
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OCR Scan
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PDF
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2SK2638-01
DDD4b57
65A2
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2SK1101-01M
Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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OCR Scan
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PDF
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2SK1006-01M
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
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2SK1134
Abstract: 2SK2000A 2SK900 2SK905 2SK905A 2SK906 2SK906A 2SK947M
Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 Volts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A
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OCR Scan
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PDF
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DDDlfl70
2SK1134
T03PF
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK947M
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2SK1511
Abstract: 2SK1512-01 2sk1018 2SK1221-01 2SK191 2SK1018-01 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01
Text: FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts Package Characteristics Max. Maximum Ratinas Device toff (PS) Coss(pfy V d s s (V) Type . Ip (AL _ Pd (W) R ds(on) Q Ciss(pf) 10220 90 210 860 80 0.40 250 W M to :
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OCR Scan
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PDF
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2SK1221-01
T0220
2SK191
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1011-01
2SK1101-01M
2SK1511
2SK1512-01
2sk1018
2SK1018-01
2SK1013-01
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TO-3P Jedec package outline
Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof
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OCR Scan
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PDF
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2SK1507-01
SC-67
O-220F15
2SK1081-01
2SK956-01
2SK1385-01R
2SK1548-01
2SK1024-01
O-220
TO-3P Jedec package outline
2sk1507
TO-220F15
K1015
TO220F15
2SK1016
2SK1015-01
2SK1916
high voltage mosfet, to-220 case
2SK956-01 equivalent
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T03P
Abstract: 2SK101
Text: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723
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OCR Scan
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PDF
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00D1A70
2SK1134
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK947M
2SK948
T03P
2SK101
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YG911S2R
Abstract: IF-10A
Text: tf —K / Rectifier Diodes • I S l i ^ ^ if iii 5?"-f —K Low-Loss Fast. Recovery Diodes LLDi 1 in one-package MX Device type ERA91-02 ERB91-02 CB903-4 ERA92-02 SC902-2 ERB93-02 ERC91-02 KS926S2 ERC90-02 YG911S2R YG911S3R YG912S2R YG912S6R TS912S6R M i l « M B + C ft
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OCR Scan
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PDF
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T0-220AB
ERA91-02
ERB91-02
CB903-4
ERA92-02
SC902-2
ERB93-02
ERC91-02
KS926S2
ERC90-02
YG911S2R
IF-10A
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