diode G21
Abstract: FD4A G22 diode LD4RA LD4A SD15 switching diode g21 DIODE diode G23
Text: ELECTRICAL CHARACTERISTICS SINGLE HIGH VOLTAGE SWITCHING DIODE Forward Voltage V Dice Type HD3A rw m Max. vF Reverse Current T Ir @ lF Max. @ rr * VR Max. V V mA hA V ns 75 1.2 110 1 75 6 Geometry G19 DUAL HIGH VOLTAGE SWITCHING DIODE V Dice Type HD2A Forward Voltage
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Untitled
Abstract: No abstract text available
Text: bOE D ^70570 □□□7S3D ZETEX High speed switching diode L.4T • Z E T B S EMI CONDUCTORS FMMD914 ABSOLUTE MAXIM UM RATINGS Parameter Symbol Working peak reverse voltage V rw m 75 V Average rectified forward current at 25 °C ^F AV 75 mA Repetitive peak forward current
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FMMD914
100ns,
100kHz.
GQ07S3S
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DSA003720
Abstract: No abstract text available
Text: SILICON PLANAR HIGH SPEED SWITCHING DIODES HD2A HD3A HD4A I 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE VR IF Continuous Reverse Voltage Forward Current UNIT 75 V 100 mA mW Power Dissipation at T amb = 25°C P T O T 330 Operating and Storage Temperature Range
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DIODE LL4148
Abstract: MELF DIODE color bands LL4148 melf diode color
Text: 3Q T LL4148 REVERSE VOLTAGE FORWARD CURRENT Switching Diode 75 Volts 0.15 Amperes MINI MELFÍLL-3 4 Features • Silicon eltaxlal planar diode • High speed switching diode • 500mW bower dissipation Mechanical Data T • Cases:Min-MELF glass case • Polarity:Color band denotes cathode
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LL4148
500mW
LL-34)
100Hz
100fl
100MHz
LL4148
DIODE LL4148
MELF DIODE color bands
melf diode color
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Untitled
Abstract: No abstract text available
Text: OM6OL6OSB OM50F60SB Prelim inary Data Sheet OM45L120SB OM35F12QSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES |o _ o i © © High Current, High Voltage 60 0V And 1200V. Up To 75 A m p IG B T s With F R E D Diodes FEATURES • • • • •
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OM50F60SB
OM45L120SB
OM35F12QSB
60L60SB
45L120SB
50F60SB
35F120SB
45L120SB
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BAW62
Abstract: FR 309 diode
Text: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage
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BAW62
BAW62
EAVV62
FR 309 diode
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Untitled
Abstract: No abstract text available
Text: DSEI2X161-02A Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition)75# Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current V(RRM) (V) Rep.Pk.Rev. Voltage t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)
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DSEI2X161-02A
StyleSOT-227B
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diode b32
Abstract: b32 diode BAS21 dual COMMON cathode low leakage diodes DIODE b32 01
Text: 5bE D I TÎ7057Ô 0007053 b32 « Z E T B SEMICONDUCTOR DICE SWITCHING DIODES Dice type BAS21 Description High voltage single diode "V- o \ " 0 5 ^ ZETEX SEMICONDUCTORS Trr V BR v F Min. Max. at Volts Volts mA HA Volts 250 1.0 100 0.1 200 50* G 24 1.0 75
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BAS21
100S2
100il,
diode b32
b32 diode
dual COMMON cathode
low leakage diodes
DIODE b32 01
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B0004
Abstract: CDSV3-16-G CDSV3-56-G CDSV3-70-G CDSV3-99-G v50s
Text: COAICHII* Small Signal Switching Diodes CDSV3-99-G/ 70-G/ 5 6 -G /16G % Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SO T-323 D es ig n ed fo r m ounting on sm all s urfa ce . High s p eed sw itching. 0.059 1.80 High m ounting cap ab ility, strong surge
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CDSV3-99-G/
56-G/16G
200mA
OT-323,
MIL-STD-750,
CDSV3-16-G
CDSV3-99-G
CDSV3-70-G
CDSV3-56-G
OT-323
B0004
CDSV3-56-G
v50s
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Untitled
Abstract: No abstract text available
Text: PA89PA89 • PA89A • PA89A P r o d u c t IPA89A Innnnoovvaa t i o n FFr roomm PA89, High Voltage Power Operational Amplifiers FEATURES • 1140V P-P SIGNAL OUTPUT • WIDE SUPPLY RANGE — ±75V to ±600V • Programmable CURRENT LIMIT • 75 mA CONTINUOUS OUTPUT CURRENT
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IPA89A
PA89A
PA89A
MO-127
PA89U
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Untitled
Abstract: No abstract text available
Text: 2?QLôMb 0000175 ^1T 1,500 to 20,000 Volts 0.6 to 3 Amps. Standard Recovery SERIES HD O \ 1/4-28 Thread Modular • "Hi-BeP High Voltage Rectifier Assemblies Repetitive Peak Reverse Voltage HVCA Number Vrhm V Volt8 Avg.Forward Current Max. If a v m @ T c 75*C
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HDB25
HDA10
HDA15
HDA20
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CIL 1302
Abstract: cil 1305
Text: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT
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CIL-1300
CIL-1305
CIL 1302
cil 1305
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Untitled
Abstract: No abstract text available
Text: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage
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BAS28
BAS28
BAW62;
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Untitled
Abstract: No abstract text available
Text: HD1707 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time20n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m
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HD1707
Current80m
Voltage50
Time20n
Current25u
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Untitled
Abstract: No abstract text available
Text: HD1706 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time15n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m
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HD1706
Current80m
Voltage80
Time15n
Current25u
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Untitled
Abstract: No abstract text available
Text: BAS32L Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)5.0m
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BAS32L
Current200m
Voltage75
Current100u
StyleSOD-80
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AAAQ
Abstract: N2 SOT23-6 mosfet n3 MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA
Text: 19-1262; Rev 0; 3/98 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
AAAQ
N2 SOT23-6
mosfet n3
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
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Untitled
Abstract: No abstract text available
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
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MAX4529
Abstract: MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T N2 SOT23-6
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
MAX4529EUA
MAX4529EUT-T
N2 SOT23-6
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IC Analog Switch Chip
Abstract: MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
IC Analog Switch Chip
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
MAX4529EUA
MAX4529EUT-T
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transistor bd4202
Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F* Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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BUL45
BUL45F*
BUL45F,
E69369
RATING32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
transistor bd4202
motorola AN485
transistor tip120
motorola MJ480
MJE802 MOTOROLA
TRANSISTOR REPLACEMENT GUIDE
2SC495 transistor
MJE1100 MOTOROLA
BUX98A
MJE170 motorola
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1N4000 silicon diodes
Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
Text: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability
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1N4001
1N4007
BY133.
DO-15
1N4000
1N4000 silicon diodes
1N4000 - 1N4007
1n4000 a 1n4007
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CMHZ5265B
Abstract: CMHZ5228B CE5 marking SOD-123 marking code 1200 CMHZ5224B CMHZ5225B CMHZ5226B CMHZ5227B CMHZ5229B CMHZ5267B
Text: CMHZ5221B THRU CMHZ5267B SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount
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CMHZ5221B
CMHZ5267B
500mW,
CMHZ5221B
OD-123
IF105
12-August
CMHZ5265B
CMHZ5228B
CE5 marking
SOD-123 marking code 1200
CMHZ5224B
CMHZ5225B
CMHZ5226B
CMHZ5227B
CMHZ5229B
CMHZ5267B
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CE5 marking
Abstract: No abstract text available
Text: CMHZ5221B THRU CMHZ5267B SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount
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CMHZ5221B
CMHZ5267B
500mW,
OD-123
13-January
CE5 marking
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