Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    T-04 TRANSISTOR Search Results

    T-04 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T-04 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3PN0604

    Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 PDF

    3N0404

    Abstract: infineon smd package
    Text: Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N04S3-04 IPI80N04S3-04 3N0404 infineon smd package PDF

    3PN06L04

    Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02219 3PN06L04 3PN06L04 SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 PDF

    3N0404

    Abstract: IPB80N04S3-04 ANPS071E IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE
    Text: IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.8 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0404 IPI80N04S3-04 3N0404 IPB80N04S3-04 ANPS071E IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE PDF

    GMA14

    Abstract: GMA64
    Text: ISSUED DATE :2005/04/04 REVISED DATE : G M A6 4 P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain. Features High DC current gain


    Original     		GMA64 GMA14 OT-89 GMA64 GMA14 PDF

    2.45V PRECISION REFERENCE REGULATOR

    Abstract: GQ2141
    Text: ISSUED DATE :2006/04/04 REVISED DATE : GQ2141 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2141 of positive, linear regulator feature low quiescent current 50 A typ. with low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications.


    Original     		GQ2141 GQ2141 150mA 2.45V PRECISION REFERENCE REGULATOR PDF

    TSS-6035

    Abstract: tx 434 fsk modulator TDA7255 TDA7255V h86a bosch sm 17 35 integrated circuit BOSCH DEMODULATOR CLOCK VCO CI136
    Text: Preliminary Data Sheet, Version 0.9, 2010-04-29 TDA7255V ASK/FSK 434MHz Wireless Transceiver Wireless Components N e v e r s t o p t h i n k i n g . Edition 2010-04-29 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 6/1/10.


    Original     		TDA7255V 434MHz D-85579 TSS-6035 tx 434 fsk modulator TDA7255 TDA7255V h86a bosch sm 17 35 integrated circuit BOSCH DEMODULATOR CLOCK VCO CI136 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ICS844242I-04 FEMTOCLOCKS CRYSTAL-TO-LVDS 150MHZ CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS844242I-04 is a Serial ATA SATA /Serial ICS Attached SCSI (SAS) Clock Generator and a HiPerClockS™ member of the HiPerClocks T M family of high


    Original     		150MHZ ICS844242I-04 ICS844242I-04 25MHz 150MHz. 12kHz 20MHz 16-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ICS844244I-04 FEMTOCLOCKS CRYSTAL-TO-LVDS 150MHZ CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS844244I-04 is a Serial ATA SATA /Serial ICS Attached SCSI (SAS) Clock Generator and a HiPerClockS™ member of the HiPerClocks T M family of high


    Original     		150MHZ ICS844244I-04 ICS844244I-04 25MHz 150MHz. 12kHz 20MHz 16-pin PDF

    sdars

    Abstract: BFP740FESD BFP640FESD BFP640 EICEDRIVER symbian C166 LQW15A 26DBM-K vinaxTM l1
    Text: BF P640 F ES D High Gain and Lo w Noise Amplifier B F P640 F ESD fo r S D A R s 2nd S t a ge 2.33 GHz Applic atio n Technic al Rep ort T R 1019 Revision: no Revision 2010-04-23 RF and Protecti on Devi c es Edition 2010-04-23 Published by Infineon Technologies AG


    Original     		BFP640FESD 2200MHz 33GHz TR1019, BFP640FESD sdars BFP740FESD BFP640 EICEDRIVER symbian C166 LQW15A 26DBM-K vinaxTM l1 PDF

    AP24026

    Abstract: EMC design ferrite chip spice model 1608HW241 EMC for PCB Layout hall ic 067 IC BOSCH 44 10X10 powerstar ems Design Seminar Signal Transmission
    Text: App lica tion No te , V 3 .0 , Ap ril 2005 AP24026 Microcontroller EMC Design Guidelines M i c ro c o n troller Board Lay out Microcontrollers N e v e r s t o p t h i n k i n g . for TriCore Revision History: 2005-04 Previous Version: 2001-04 Page Subjects major changes since last revision


    Original     		AP24026 AP24026 EMC design ferrite chip spice model 1608HW241 EMC for PCB Layout hall ic 067 IC BOSCH 44 10X10 powerstar ems Design Seminar Signal Transmission PDF

    13.56Mhz class e power amplifier

    Abstract: 13.56 MHz spiral antenna smd transistor marking 1p h Class E power amplifier, 13.56MHz TRANSISTOR SMD MARKING CODE 1P 12p smd 434 mhz oscillator tss-3b DIODE MARKING 47N MATERIAL SAFETY DATA SHEET RENATA CR2032
    Text: D at a S h ee t , V 1. 2 , A pr i l 20 0 8 TDK5100F 434 M Hz ASK/ FS K Transm i tte r in 10 -p in Package W i re l e s s C o n t r o l Co mpo ne nts N e v e r s t o p t h i n k i n g . Edition 2008-04-04 Published by Infineon Technologies AG, Am Campeon 1-12,


    Original     		TDK5100F 13.56Mhz class e power amplifier 13.56 MHz spiral antenna smd transistor marking 1p h Class E power amplifier, 13.56MHz TRANSISTOR SMD MARKING CODE 1P 12p smd 434 mhz oscillator tss-3b DIODE MARKING 47N MATERIAL SAFETY DATA SHEET RENATA CR2032 PDF

    STP80NF03L-04

    Abstract: No abstract text available
    Text: STP80NF03L-04  N-CHANNEL 30V - 0.0034 Ω - 80A TO-220 STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STP80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.0034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STP80NF03L-04 O-220 STP80NF03L-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STB80NF03L-04 PDF

    STB80NF03L-04

    Abstract: No abstract text available
    Text: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A TO-262/TO-263 STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STB80NF03L-04 O-262/TO-263 O-262) O-263) STB80NF03L-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. DESCRIPTION A B C D DATE APPROVED 04/05/04 11/04/04 07/12/11 03/13/12 Engineering Release Engineering Update Request for Quotation Dimensioned Bumps M. C. M. C. T. Y. T. Y. 0.20 [5.1mm] 0.22 [5.5mm] 0.035 [0.9mm] —«- r 0.015 [0.4mm] TYP. 0.071 [1.8mm]


    OCR Scan     		03-NL. BV00-E101. PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor MILITARY DATA SHEET Original Creation Date: 04/24/95 Last Update D a t e : 04/24/95 Last Major Revision D a t e : 04/24/95 MNLMl 5 78—X R E V OAO SWITCHING REGULATOR General Description The LM1578 is a switching regulator which can easily be set up for such DC-to-DC voltage


    OCR Scan     		LM1578 750mA MNLM1578-X PDF

    2N6766

    Abstract: 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200
    Text: □1 3875081 G E "dF ^ 3 SOLID ô ?5001 0 0 1 04 04 0 1~~_ T'3?'/3 0 1E 18 4 0 4 D _ Standard Power M O S F E T s STATE File Number 1591 2N6766 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		2N6766 2N6766 can00 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200 PDF

    bvc62

    Abstract: STR 734
    Text: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BLV859 SC08a OT262B SCA51 127041/1200/02/pp16 bvc62 STR 734 PDF

    l17c

    Abstract: 727 Transistor power values BLF246B
    Text: DISCRETE SEMICONDUCTORS 0 Â T Â Sin] H T BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 Philips Semiconductors 2000 Feb 04 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor


    OCR Scan     		BLF246B OT161A -SOT161A OT161A l17c 727 Transistor power values BLF246B PDF

    be5l

    Abstract: CA3046 equivalent lg 15.6 pinout CA3046 CA3046M BE4L d143 T transistor
    Text: CA3045&#39; CA3046 H A R R 'S M S E M I C O N D U C T O R J M • W » W General Purpose NPN Transistor Arrays N o vem b er 1996 Features Description • Two Matched Transistors T he C A 3 04 5 and C A 3 04 6 each co n sist o f five general p u rpo se silicon NPN transisto rs on a com m on m on olithic


    OCR Scan     		CA3045' CA3046 CA3045, be5l CA3046 equivalent lg 15.6 pinout CA3046 CA3046M BE4L d143 T transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 PDF

    Untitled

    Abstract: No abstract text available
    Text: T C I 04 3456 x 1 CCD LINEAR IMAGE SENSOR D 2 6 8 7 , FEBRUARY 1 9 8 3 -R E V IS E D JU LY 1 989 T C I 04 . . . D U A L -IN -L IN E P ACKAGE 3 4 5 6 x 1 Sensor Element Organization TOP V IE W Virtual-Phase N-Channei Silicon MOS KJ Technology High Quantum Efficiency


    OCR Scan     		PDF