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    60N02

    Abstract: 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4

    Untitled

    Abstract: No abstract text available
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R r14525 NTD60N02R/D

    T60 N02R

    Abstract: T60N02R 60N02R 60N02 n02r
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02R T60N02R 60N02R 60N02 n02r

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02R T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4

    t60n02r

    Abstract: T60 N02R 60N02R T 60 N02R 60N02
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D t60n02r T60 N02R 60N02R T 60 N02R 60N02

    T60N02R

    Abstract: No abstract text available
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D T60N02R

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r NTD60N02RG 60N02 NTD60N02RT4G NTD60N02R
    Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G NTD60N02R-1 NTD60N02R-1G BRD8011/D. T60 N02R T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r 60N02

    n02r

    Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
    Text: NTD60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D n02r T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948

    T60N02R

    Abstract: T60 N02rg T60N02RG t60n02 N02rg T60-N02RG t60.n02r n02r n02rg t60 NTD60N02R
    Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D T60N02R T60 N02rg T60N02RG t60n02 N02rg T60-N02RG t60.n02r n02r n02rg t60 NTD60N02R

    60N02

    Abstract: t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G
    Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G

    NTD60N02R

    Abstract: NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R
    Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D NTD60N02R NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R

    T60 N02RG

    Abstract: T60N02R T60N02 T-60
    Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02RG T60N02R T60N02 T-60

    60N02

    Abstract: t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R
    Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R

    n02rg

    Abstract: diode t95 T95N02R T 60 n02rg ON n02rg T95N02RG NTD95N02R 369D NTD95N02RG NTD95N02RT4
    Text: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD95N02R NTD95N02R/D n02rg diode t95 T95N02R T 60 n02rg ON n02rg T95N02RG NTD95N02R 369D NTD95N02RG NTD95N02RT4

    n02rg

    Abstract: ON n02rg n02r diode t95 NTD95N02RT4G 369D NTD95N02R NTD95N02RG NTD95N02RT4 T 60 n02rg
    Text: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD95N02R NTD95N02R/D n02rg ON n02rg n02r diode t95 NTD95N02RT4G 369D NTD95N02R NTD95N02RG NTD95N02RT4 T 60 n02rg

    diode t95

    Abstract: T95 Diode N02R 369D NTD95N02R NTD95N02RT4
    Text: NTD95N02R Power MOSFET 95 A, 24 V, N−Channel DPAK Features • • • • High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses http://onsemi.com V(BR)DSS


    Original     		PDF NTD95N02R NTD95N02R/D diode t95 T95 Diode N02R 369D NTD95N02R NTD95N02RT4

    diode t95

    Abstract: N02R T95 Diode T95N02R
    Text: NTD95N02R Power MOSFET 95 A, 24 V, N−Channel DPAK Features • • • • High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses http://onsemi.com V(BR)DSS


    Original     		PDF NTD95N02R diode t95 N02R T95 Diode T95N02R

    n02r

    Abstract: 369A-13 NTD110N02R NTD110N02R1 NTD110N02RT4 110N02R 110N02
    Text: NTD110N02R Power MOSFET 110 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD110N02R r14525 NTD110N02R/D n02r 369A-13 NTD110N02R NTD110N02R1 NTD110N02RT4 110N02R 110N02

    369A

    Abstract: NTD85N02R
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS RDS(on) = 4.8 mW (Typ)


    Original     		PDF NTD85N02R NTD85N02R/D 369A

    85N02R

    Abstract: DSA005309 NTD85N02R
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS


    Original     		PDF NTD85N02R NTD85N02R/D 85N02R DSA005309

    NTD85N02R

    Abstract: No abstract text available
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS RDS(on) = 4.8 mW (Typ)


    Original     		PDF NTD85N02R 369AA NTD85N02R/D

    85N02

    Abstract: 85n02r NTD85N02R
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS RDS(on) = 4.8 mW (Typ)


    Original     		PDF NTD85N02R NTD85N02R/D 85N02 85n02r