diodo germanio
Abstract: IEC1010-2-032 IEC1010-1 IEC1010-2032 DIODO Germanium display catodo diodo silicio diodo um 1a Germaniumdiode
Text: Stromzange AC / DC MS 2138 Bedienungsanleitung Mode d’emploi Manuale d’uso by CL-Electronics GmbH 2006 INHALTSVERZEICHNIS • SICHERHEITSINFORMATIONEN • ZEICHENERKLÄRUNG • SICHERHEITSVORKEHRUNGEN • WARTUNG • ALLGEMEINE BESCHREIBUNG • GEHÄUSEBESCHRIFTUNG
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IEC1010-1
IEC1010-2032
diodo germanio
IEC1010-2-032
DIODO
Germanium
display catodo
diodo silicio
diodo um 1a
Germaniumdiode
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FX2N 64mr manual
Abstract: FX2N-48MT FX2N-128MR mitsubishi plc FX2n-32mt SERIES FX2N-64MT fx2n-48mr FX2N-1PG MANUAL Mitsubishi MELSEC FX2N-80MR FX2N-80MT Mitsubishi MELSEC FX2N-80MR-DS
Text: HARDWARE MANUAL FX2N SERIES PROGRAMMABLE CONTROLLERS FX2N Series Programmable Controllers ENG Foreword • • • FRE Préface • • • GER • • Dieses Handbuch enthält Texte, Abbildungen und Erläuterungen zur korrekten Installation und Bedienung der FX2N-SPS und sollte vor einer Installation oder einem Einsatz des Gerätes gelesen werden. Die Inhalte müssen verstanden sein.
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JY992D66301H
J24532
FX2N 64mr manual
FX2N-48MT
FX2N-128MR
mitsubishi plc FX2n-32mt SERIES
FX2N-64MT
fx2n-48mr
FX2N-1PG MANUAL
Mitsubishi MELSEC FX2N-80MR
FX2N-80MT
Mitsubishi MELSEC FX2N-80MR-DS
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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Schottky Barrier Diodes
Abstract: symboles IRM VRM
Text: SCHOTTKY BARRIER DIODE 2 7 .7 A / 6 0 — 90V C 25 T09 Q C 2 5 T 1 0 Q SQUARE-PAK FEATU R ES 0 Similar to TO-263AB Case, Surface Mount Device 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency » High Surge Capability
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O-263AB
C25T10Q
C25T09Q
C25T10Q
Schottky Barrier Diodes
symboles IRM VRM
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C60P03Q
Abstract: C60P04Q
Text: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 66A/30~40V FEA TUR ES ° Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common Low forward Voltage Drop • Low Power L o s s , High Efficiency • High Surge Capability • 30 Volts through. 60 Volts Types Available
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6A/30
C60P03Q
C60P04Q
O-247AC
bbl5123
0Q02102
C60P04Q
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C25P04Q
Abstract: SM3 DIODE C25P03Q 4B20 1A039
Text: SCHOTTKY BARRIER DIODE C25P03Q C25P04Q 2 7.7 A /30 — 40V 5.30209 FEATURES 3.60142), 15.91.1 4.'?USS) °Similar to TO-247AC TO-3P) Case •&M.ml T53D 5 3 Ï3 W ° Dual Diodes - Cathode Common 2Q.3(.800) r~ 4X 169) 3.7{.145) o Low Forward. Voltage Drop L
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C25P03Q
C25P04Q
O-247AC
SC031)
D002Dflb
C25P04Q
SM3 DIODE
4B20
1A039
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C60P05Q C60P06Q 66A/50— 60V FEATURES • Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Capability • 30 Volts through 60 Volts Types Available
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C60P05Q
C60P06Q
6A/50â
O-247AC
C60P05Q
bblS123
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C30P04Q
Abstract: C30P03Q Schottky Diode 40V 5A 10-RE
Text: SCHOTTKY BARRIER DIODE C30P03Q C30P04Q 33A /30~40V FEATURES 5.312091 4 .7 U 8 5 • Similar to TO-247AC TO-3P) Case • Dual Diodes - Cathode Common • Low Forward Voltage Drop c Low Power Loss, High Efficiency 2.20087)4 - Ì 3.21.1261-1 - J High Surge Capability
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3A/30
C30P03Q
C30P04Q
O-247AC
100kHi
bbl51E3
C30P04Q
Schottky Diode 40V 5A
10-RE
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Untitled
Abstract: No abstract text available
Text: 2VQ09CT 2VQ10CT 2VQ09CTF 2VQ10CTF 2.2A/90— 100V SCHOTTKY BARRIER DIODE FEATURES « TO-251AA Case »TO-252AA Case, Surface Mount Device 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts
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2VQ09CT
2VQ10CT
2VQ09CTF
2VQ10CTF
O-251AA
O-252AA
2VQ09CT
2VQ09CTF
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Untitled
Abstract: No abstract text available
Text: C30P09Q C30P10Q 33A/90— 100V SCHOTTKY BARRIER DIODE FEATURES • Similar to TO-247AC TO-3P Case 9 Dual Diodes - Cathode Common <&. • Low Forward Voltage Drop c Low Power Loss, High Efficiency 2.21.0« ? )2 C 1 2 6 ). o High Surge Capability ÿ.SI.OSU MAX „
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C30P09Q
C30P10Q
3A/90â
O-247AC
C30P09Q
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C30P03Q C30P04Q 33A/30~40V 5.31.209 4.71.185) FEATURES • Similar to TO-247AC TO-3P) Case .626) 0 Dual Diodes - Cathode Common 3.6C.142), — 5.71.224) 5.312081 3.4U34) 20.31.800) 4.3(.169) 3.71.145) o Low Forward Voltage Drop I57(775î
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C30P03Q
C30P04Q
3A/30
O-247AC
C30P03Q
bbl51E3
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 6VQ03CT 6VQ04CT 6VQ03CTF 6VQ04CTF 6.6A/30—40V FEATURES ° TO-251AA Case «TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common • Low Forward Voltage Drop ° Low Power Loss 6VQ*•CTF TO-252AA 0 High Surge Capability
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6VQ03CT
6VQ04CT
6VQ03CTF
6VQ04CTF
O-251AA
O-252AA
O-252AA
O-251AA
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4.4A/90— 100V FEATURES °TO-251AA C as e »TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability ° 30 Volts thru 100 Volts
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O-251AA
A/90--
4VQ09CT
4VQ10CT
4VQ09CTF
4VQ10CTF
O-252AA
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c60p06q
Abstract: diode 66a C60P05Q
Text: SCHOTTKY BARRIER DIODE 66A / 50~ 60v cboposq csopobq FEATURES “ Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.7U 85) o Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss, High Efficiency 2.24.087) 3.2U 26). 0.8(.031) M AX • High Surge Capability
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6A/50
O-247AC
I7CTS55
1341UIA
C60P05Q
C60P06Q
a-60V
bblS123
c60p06q
diode 66a
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FAG 32 diode
Abstract: FAG 14 diode 1AM Diode
Text: SCHOTTKY BARRIER DIODE C30P05Q C30P06Q 33A/50~ 60V FEATURES 4.7 .185 ° Similar to TO-247AC (TO-3P) Case n ' J 15.9C.«26)_ 15.3t.602) l _ 5.7^.224) ° Dual Diodes - Cathode Common S T~ i) - è Y f y \ ° Low Forward. Voltage Drop 4.31169) 3.7(.145) l ° Low Power Loss, High Efficiency
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C30P05Q
C30P06Q
3A/50~
O-247AC
C30P05Q
FAG 32 diode
FAG 14 diode
1AM Diode
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u31 diode st
Abstract: C30P04Q
Text: SCHOTTKY BARRIER DIODE 33A/30— 40V C30P03Q C30P04Q FEATURES 5.3| 2091 4.7« 1 S 5 i °Similar to TO-247AC TO-3P Case I r n I5 .9 (.6 2 6 i :•* 61 142) „ I5 .3t 6 0 2 V 3 41.134) L 5 7 (2 2 4 ) 53Ï5M) ° Dual Diodes - Cathode Common N N - « Low Forward Voltage Drop
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O-247AC
3A/30--
C30P03Q
C30P04Q
087j-*
C30P03Q
u31 diode st
C30P04Q
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 27.7A/5 0 — 60V C25P05Q C25P06Q FEATURES • Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.71.185) . 15.9i.626) . 3 .6 (.1 4 2 l„ ,. i r'i5-&6ffin^3.4U34>D1A 5.71.224) 5.'3(.M8) « Dual Diodes - Cathode Common 20.3(.800) 19.7i.775)
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C25P05Q
C25P06Q
O-247AC
C25P05Q
0GG20Ã
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DIODE 6AA
Abstract: 2VQ09CT 2VQ09CTF 2VQ10CT 2VQ10CTF
Text: 2VQ09CT 2VQ10CT 2VQ09CTF 2VQ10CTF 2.2A/90— 100V SCHOTTKY BARRIER DIODE FEA TU RES ° TO-251AA Case »TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts
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2VQ09CT
2VQ10CT
2VQ09CTF
2VQ10CTF
O-251AA
O-252AA
38MAX
58MAX
DIODE 6AA
2VQ10CTF
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I251 diode
Abstract: I251 252AA 2VQ05CT 2VQ05CTF 2VQ06CT 2VQ06CTF
Text: SCHOTTKY BARRIER DIODE 2VQ05CT 2VQ06CT 2VQ05CTF 2VQ06CTF 2.2A/50~60V FEATURES • TO-251AA Case • TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common • Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability » 30 Volts thru 100 Volts
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2VQ05CT
2VQ06CT
2VQ05CTF
2VQ06CTF
O-251AA
O-252AA
252AA
38MAX
58MAX
O-251AA
I251 diode
I251
2VQ06CTF
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C30P10Q
Abstract: C30P09Q ST020 094A
Text: SCHOTTKY BARRIER DIODE C 30P09Q C 3 0 P 1 0 Q 33 A/9 0 — 100 V FEATURES • Similar to TO-247AC TO-3P Case 5.71.224) ° Dual Diodes - Cathode Common T <£. 4.31169) 3.7(.14S) • Low Forward Voltage Drop c Low Power Loss, High Efficiency 2.2(.087U 3.2(.126>. a
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3A/90â
C30P09Q
C30P10Q
O-247AC
087Ka
3C169)
I-50K
ij-25t:
C30P10Q
ST020
094A
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abb bov 660
Abstract: BOD 1-04 Abb breakover diode BOV1000-S dsas16u ABB bod 1-11 dsas 5-0 dsas10u DSAS5U dsas
Text: A B B SEMI CONDUCTORS AG BOD • Breakover Diodes Version Type Ordering number Bestellnummer Num. de commande BOD 1-04 -05 -06 -07 -08 -09 -10 3 flE P V bo Ibo V V Tvj=25°C Ta =50°C mA A 400 500 600 700 800 900 1000 ± 50 <15 Iavm 1100 1200 1300 1400 1500
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QDlb63Ã
01b63fl
000D0M2
abb bov 660
BOD 1-04
Abb breakover diode
BOV1000-S
dsas16u
ABB bod 1-11
dsas 5-0
dsas10u
DSAS5U
dsas
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schottky diode 43t
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C25T05Q C25T06Q 27.7A /50~ 60V 4.8 .189l 4.4Ü73 * SQUARE-PAK f 10.61.4171 I 9.6Ç378) 10.K.398) 8.5U35S 1.81.071)* 1.4(055) 1. "l.2(.047) ^ 0 -0 .3 (.0 12) FEATURES I.4(.055) I nscössp * Similar to TO-263AB Case, Surface, Mount Device
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C25T05Q
C25T06Q
5U35S
O-263AB
0C118)
schottky diode 43t
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thyristor BBC
Abstract: thyristor BBC CS 0,6 thyristor BBC CS BROWN BOVERI protection kippdiode bbc cs 23 thyristor
Text: BBC BROWN BOVERI Breakover Diode BOD 1 -0 4 BOD 1-42 R Druckschrift/Publication No. C H -E 3.40515.1 D/E/F Ausgabe/Edition September/Septembre 1985 VBo ' 400.4200 V Kippdiode: BOD Breakover Diode: BOD Diode de retournement: BOD M erkm ale Features Particularités
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CH-5401
D-6800
D-6840
thyristor BBC
thyristor BBC CS 0,6
thyristor BBC CS
BROWN BOVERI protection
kippdiode
bbc cs 23 thyristor
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